2F4000 Search Results

Contextual Info: molate 128K X 32 FLASH MODULE PUMA 2F4000-15/20/25 issue 1.1 : June 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 4,194,304 bit CMOS FLASH Memory Module Pin Definition Features Fast access times of 150/200/250 ns. User Configurable as 32 /1 6 / 8 bit wide.

Contextual Info: Issue 1.0: October 1989 PUMA 2F4000 4 M e g a b i t C M O S F LASH EE P R OM PU MA PUMA 2F4000 M : : !:;r . • ' ADVANCE PRODUCT INFORMATION 4,194,304 CMOS High Speed FLASH™ EEPROM Features ' P i n Definition User Configurable as 8,16, or 32 bit wide

2R37

Contextual Info: MOSAIC SEMICONDUCTOR INC MOE bBSBB?^ D 0000503 Ô IflOC 7 ^ -/3 -2 7 PUMA 2F4000 PUMA 2F4000-12/15/20 Issue 1.1 : April 1991 ADVANCE PRODUCT INFORMATION Mosaic Sem iconductor In c Pin Definition 4,194,304 bit CMOS High Speed FLASH EEPROM Block Diagram A 0 - A 1 6 -^

EVD30

Contextual Info: 128K x 32 FLASH MODULE molate PUMA 2F4000-15/20/25 Issue 2.0: May 1994 PRELIMINARY S e m ic o n d u c to r r In c . 4,194,304 bit CMOS FLASH Memory Module Features Pin Definition 1 Fast access times of 150/200/250 ns. User Configurable as 32 /1 6 / 8 bit wide.

Contextual Info: m s*. ,-: m 128K X 32 FLASH MODULE molate PUMA 2F4000-15/20/25 Issue 1.1 : June 1992 ADVANCE PRODUCT INFORMATION ie m ic o n d u c to r 4,194,304 bit CM O S FLASH Memory Module Pin Definition Features 12 23 o O O De WE2 0 1 5 O n. o DO CS2 0 14 o O o 010 GND 013

2F4000

Abstract: 2F4000-15
Contextual Info: 128K x 32 FLASH MODULE m o l a t e PUMA 2F4000-15/20/25 Issue 2.0: May 1994 PRELIMINARY S e m ic o n d u c to r Inc. 4,194,304 bit CMOS FLASH Memory Module ^P in D efinition Features 1 Fast access times of 150/200/250 ns. User Configurable as 32 /1 6 /8 bit wide.

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Spansion S29GL512N11

Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

SGA23

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,

a22t

Abstract: S19G S29GL-N
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications

S29GL-N

Abstract: 1E300
Contextual Info: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this

7be0

Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

PUMA2F4002

Contextual Info: JUL o 8 199J PUMA 2F4002 molate PUMA 2F4002-90/12/15/20 Issue 1.1 : April 1991 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. Pin Definition 4,194,304 bit CMOS FLASH Memory Module Features FLASH Eraseable Non-Volatile Memory Module. User Configurable as 8, 16 or 32 bit wide.

pdl128g70

Abstract: SA90 1D400
Contextual Info: ADVANCE INFORMATION Am29PDL128G 128 Megabit 8 M x 16-Bit/4 M x 32-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory with VersatileIOTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • 128Mbit Page Mode device ■ Software command-set compatible with JEDEC 42.4

2B60000

Abstract: S70GL01GN00 S29GL512N gl512 2200-0002
Contextual Info: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development

M29EWL

Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F00am29

Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

MBM29XL12DF

Contextual Info: MBM29XL12DF-70/80 Data Sheet Retired Product MBM29XL12DF -70/80 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

S29GL512N datasheet

Abstract: GL128n s29gl256p S29GL256p spansion S29GL512P Spansion obsolescence S29GL S29GL128N S29GL128P S29GL256N S29GL512N
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet For new designs, S29GL512P, S29GL256P, and S29GL128P supersedes S29GL512N, S29GL256N, and

1A4000

Contextual Info: Am29PDL128G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

gl256N

Abstract: S29GL512N datasheet S29GL-N S19GL128N 31df* 33H s29gl512 FBGA 8 x 14 package tray S29GL date code marking S29GL128N S29GL256N
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications

SA418

Abstract: 346000 S29GL-N
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications