2C40 Search Results

2C40

Abstract: 2C40A tube 957 Scans-0017383 general electric
Contextual Info: 2C40-A ELECTRONICS 2C40-A ET-T1212C Page 1 PLANAR TRIODE 12-61 DESCRIPTION AND RATINGThe 2C40-A is a triode of lighthouse construction designed for use as a CW oscillator, radio-frequency amplifier, or plate-pulsed oscillator a t frequencies as high as 3370 megacycles.

2C4031

Abstract: 2C4030 2C4032 2C4033 ic4010
Contextual Info: P P C P R O D U C T S CORP 2C4030 2C4032 LjOE D bflSblll DDDO' ìSLd T7Q • PPC PNP Low Power Transistor Chips 2C4031 2C4033 I ^T-33-O \ FEATURES CHIP TYPE: AJ • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 20,000 A Nominal

TINIs400

Abstract: TINIm390 2C400 AN3412 DSTINIs400 TINI 2c400 AN706 DS80C390 DS80C400 DSTINIM400
Contextual Info: Maxim > App Notes > MICROCONTROLLERS Keywords: 87-2c400-sxb, serial port, tiniexternalserialport, tini, tinios, tinis400, serial2, serial3, uart, duart, ds80c400, max3245e Nov 30, 2004 APPLICATION NOTE 3412 TINIS400 External Serial Port Reference Design Abstract: This application note describes the implementation of external serial ports on a DSTINIS400 Sockets

2N4029

Abstract: 2N4033 Semicoa 2N4033 transistor 2N4033
Contextual Info: Data Sheet No. 2C4029 Generic Packaged Parts: Chip Type 2C4029 Geometry 6700 Polarity PNP 2N4029, 2N4033 30 MILS B E 30 MILS Chip type 2C4029 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N4029, 2N4033 Product Summary:

Contextual Info: D a ta S h e e t No. 2 C 4 0 2 9 SEMICONDUCTORS Generic Packaged Parts: Chip Type 2C4029 Geometry 6700 Polarity PNP 2N4029, 2N4033 1 Chip type 2C4029 by Semicoa Semi­ conductors provides performance similar to these devices. Part Numbers: 2N4029, 2X4033 Product Summary:

2N4393 MOTOROLA

Abstract: 2N3970 2N4393 2n4093 motorola MPF820 MPF-4391 Motorola 2N4393 MPF4392
Contextual Info: MOTOROLA SC 34 -CDIODES/OPTOÏ 6 3 6 7 2 5 5 M O T O R O L A SC D F |t.3 b 7 2 S 5 <D I O D E S / O P T O 34 C 003ÛD34 38034 * * FIELD-EFFECT TRANSISTORS DICE continued) T - D ? r - 2-i" 2C4091 DIE NO. LINE SOURCE — DFM140 This die provides performance equal to or better than that of

Contextual Info: 2C4032 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)500m

Contextual Info: 2C4030 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)500m

Contextual Info: 2C4031 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)500m

Contextual Info: 2C4033 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)500m

BR17

Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

7813 Texas Instruments Transistor

Abstract: TMS320C6000 TMS320C6474 C6000 C6474 C64X DDR2-667 SPRS552H BR17
Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

SPRAGUE 1C

Abstract: 10Z5U104M050B Sprague Z5U alcoa 1C 9C VISHAY
Contextual Info: Types 1C - 9C VISHAY ▼ Vishay Sprague Ceramic Capacitors Monolythic , Conform al-Coated, Radial Lead FEATURES • EIA characteristics COG, X7R, Z5U • Capacitance range 10pF to 4.7|iF • Voltage ratings 50 WVDC to 100 WVDC • Wide choice of lead spacing

transistor d880

Abstract: BR17
Contextual Info: TMS320C6474 www.ti.com SPRS552E – OCTOBER 2008 – REVISED APRIL 2010 TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

IR power mosfet switching power supply

Abstract: trailing SCHEMATIC dimmer 568AF IR2136 application note RDA 8810 marking code SM texas ARMv5TE usermanual datasheet Po 9038 LPC2927 LPC2929
Contextual Info: D D R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D R A F FT FT A A R R D D User manual D Rev. 01.01 — 14 July 2009 R R R LPC29xx User manual D D D UM10316 D FT FT A A R R D D D R A FT D R A Document information

K d998 transistor

Abstract: lz 02 1068 D844 voltage regulator
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

TRANSISTOR SMD kl3

Abstract: P-LSSOP20-4 fra4 transistor bc 549
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

h-12-H

Abstract: SDA28 REJ09B0001 2CM06 DTC 304-2 user manual
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

ML610Q407

Abstract: KDS 4B 12 MHZ crystal t3d7 diode ML610Q4 SCK032 5252 F 1009 "integrated circuit" OKI ML610Q407 ML61040 S1B10 3 pin preset resistor 10k
Contextual Info: FEUL610Q409-01 ML610Q407/ML610Q408/ML610Q409 User’s Manual Issue Date: Nov. 7, 2010 NOTICE 1. The information contained herein can change without notice owing to product and/or technical improvements. Before using the product, please make sure that the information being referred to is up-to-date.

446H

Abstract: IR 1836 3v 30E2H 18AF 3310h 3310H transistor 3A0F bridge marking Z6 SDH 209 PM5363
Contextual Info: PM5363 TUPP+622 TUPP+622 DATASHEET PMC-1981421 ISSUE 4 SONET/SDH TRIBUTARY UNIT PAYLOAD PROCESSOR FOR 622 MBIT/S INTERFACES PM5363 TUPP+622 SONET/SDH TRIBUTARY UNIT PAYLOAD PROCESSOR FOR 622 MBIT/S INTERFACES DATASHEET RELEASED ISSUE 4: JULY 2000 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE

L33A SMD

Abstract: smd TRANSISTOR code b6 l36a adc 809 wk1 smd EA1 transistor smd PRQP0100JD-B smd code book R8C 702 TRANSISTOR smd l33a
Contextual Info: REJ09B0441-0010 R8C/L35A Group, R8C/L36A Group, R8C/L38A Group, R8C/L3AA Group, 16 R8C/L35B Group, R8C/L36B Group, R8C/L38B Group, R8C/L3AB Group Hardware Manual RENESAS MCU R8C FAMILY / R8C/Lx SERIES Preliminary All information contained in these materials, including products and product specifications,

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

Multilayer Ceramic Dipped Axial and Radial Capacitors

Abstract: 1C20X7R104K050 VISHAY MARKING CODE
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book mlcc dipped a xial and radial vishay vse-db0074-0911 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers