2SK2669 Search Results

2SK2669

Abstract: MOSFET 900V TO-220 F5V90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2669 N-Channel Enhancement type OUTLINE DIMENSIONS F5V90HVX2 Case : TO-220 (Unit : mm) 900V 5A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.

2SK2669

Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2669 N-Channel Enhancement type OUTLINE DIMENSIONS F5V90HVX2 Case : TO-220 (Unit : mm) 900V 5A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

Contextual Info: HVX-ÏÏVU-vÇ /X 9-M 0S FE T HVX-H SERIES POWER MOSFET N - Î O U T L IN E D IM E N S IO N S 2SK2669 CF5V90HVX2 900V 5 a • R A TIN G S ■ ÎÊ ÎÎJ I^ /È fë A b s o lu te m M a x im u m s R a tin g s ¡>2 /~i S ym b ol Item S to ra g e T e m p e ra tu re

Contextual Info: H V X - ï ï v U —X /t 9 - M O S F E T H V X -H SERIES POWER MOSFET N -^ -V * ;U . • W fé \f-îiB I O U T L IN E D IM E N S IO N S 2SK2669 F5V 90H V X 2 ■ Æ ÎS * R A TIN G S ■ A b s o lu te Maxim um R a tin g s m Item (T c = 2 5 °C ) 3k ft Conditions

2SK2669

Abstract: F5V90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2669 N-Channel Enhancement type OUTLINE DIMENSIONS F5V90HVX2 Case : TO-220 (Unit : mm) 900V 5A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2669

Abstract: F5V90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2669 N-Channel Enhancement type OUTLINE DIMENSIONS Case : TO-220 F5V90HVX2 900V 5A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.

2SK2674

Contextual Info: Power MOSFETs HVX-II series N-Channel, Enhancement type I, ^¿y E-pack SMD Surface Mount Cis3 (typ) R dS(ON) V dss Id Pt .i ' j . . .JA I. . 2SK2663 2SK2665 2SK2670 900 1 3 5 . m Tch V gss (max) . ivi . .L'ÌL . _

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

Contextual Info: Pow er M O S F E T HVX series N-Channel, Enhancement type Part No. Absolute Maximum Ratings Electrical Characteristics R d s ON ton toff EIAJ Tch V dss V g ss ID Pt (max) (typ) (typ) No. [°C ] [V] [V] [A] [W ] [Q ] [ns] [ns] Package Fig. 1 10 50 30 70 100

complementary MOSFET 2sk

Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Contextual Info: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V

2SK2188

Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
Contextual Info: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)

2SK4111

Abstract: 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666
Contextual Info: STI Type: 2SK258 Notes: Breakdown Voltage: 250 Continuous Current: 8 RDS on Ohm: 1.12 Trans Conductance Mhos: 0.9 Trans Conductance A: 3.0 Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: