2SK2665 Search Results

2SK2665

Abstract: F3S90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 F3S90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2665

Abstract: F3S90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 F3S90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.

2SK2674

Contextual Info: Power MOSFETs HVX-II series N-Channel, Enhancement type I, ^¿y E-pack SMD Surface Mount Cis3 (typ) R dS(ON) V dss Id Pt .i ' j . . .JA I. . 2SK2663 2SK2665 2SK2670 900 1 3 5 . m Tch V gss (max) . ivi . .L'ÌL . _

Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 F3S90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

Contextual Info: H V X - E v U - X M 9 -M 0 S F E T H V X -1 SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2665 F3S 90H V X 2 900v 3a L e a d type is a vailab le. I Ë ftX R A TIN G S A b s o lu te Maxim um R a tin g s h m ie Item ~f~ A' -î' C h a n n e l T e m p e r a tu r e

K2665

Contextual Info: I^U-X JV7 - M O S F E T -H SERIES POWER MOSFET X > A > 7> *> h O U T L IN E D IM E N S IO N S Case : STO -220 F3S90H V X2 4.6 ±0.2 10.2 02 900V 3a 1.3:±0.2 _ Date code iiST F (HH) 57 I E IA J No. 2.4- 0-3 K2665 0.1*01 ° I M ( p " Gate © (4 ) : Drain

2SK2067

Abstract: S20LCA20 d4la20 12014af S12KC40 S24LCA20 SRT-2W6H D1NL20 S10SC4 TRANSISTORS REPLACEMENT
Contextual Info: List of Discontinued Parts T h e d is c o n tin u e d p a rts a re as fo llo w s . T h e c h a r a c te r is tic s and p e rfo rm a n c e o f re p la c e m e n t p a rts a re a lm o s t th e sam e, b u t th e y are n o t id e n tic a l in all re s p e c ts .

D2SBA60

Abstract: 2SD1515 2SC3259 2SC3261 S1WB40 SRT-2W6H 2SC4530 2SC3262 2SC2789 S12KC20
Contextual Info: List of Discontinued Parts The discontinued parts are as follows. The characteristics and performance of replacement parts are almost the same, but they are not identical in all respects. Therefore, we ask you to study the details shown in the list carefully when using the parts.

S20LCA20

Abstract: D5LCA20 2SK2067 SRK-12ZB D8LCA20 D15LCA20 D5KC20R S24LCA20 D8LCA20R SRT-2W6H
Contextual Info: List of Discontinued Parts The d iscontinued parts are as follow s. The characteristics and performance of replacem ent parts are alm ost the same, but they are not identical in all respects. Therefore, we ask you to study the details shown in the list carefully when using the parts.

Contextual Info: Pow er M O S F E T HVX series N-Channel, Enhancement type Part No. Absolute Maximum Ratings Electrical Characteristics R d s ON ton toff EIAJ Tch V dss V g ss ID Pt (max) (typ) (typ) No. [°C ] [V] [V] [A] [W ] [Q ] [ns] [ns] Package Fig. 1 10 50 30 70 100

complementary MOSFET 2sk

Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Contextual Info: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V

2SK2188

Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
Contextual Info: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)

2SK4111

Abstract: 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666
Contextual Info: STI Type: 2SK258 Notes: Breakdown Voltage: 250 Continuous Current: 8 RDS on Ohm: 1.12 Trans Conductance Mhos: 0.9 Trans Conductance A: 3.0 Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: