2SJ281 Search Results

2SJ201

Abstract: 2SJ281
Contextual Info: Ordering num ber: EN 4 2 4 3 Ä 2SJ281 N0.4243A P-Channel MOS Silicon FET Very High-Speed Switching Applications i F eatu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage

2SJ281

Contextual Info: Ordering number:EN4243A P-Channel Silicon MOSFET 2SJ281 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ281] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5

2SJ281

Contextual Info: Ordering number:EN4243A P-Channel Silicon MOSFET 2SJ281 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ281] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5

2SJ281

Abstract: ITR00348 ITR00349
Contextual Info: 注文コード No.N 4 2 4 3 A 2SJ281 No. 4 2 4 3 A 三洋半導体ニューズ 61499 新 半導体ニューズ No. ※ 4243 とさしかえてください。 2SJ281 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用

2092A

Contextual Info: 2SJ281 AP Advanced Performance Series 2083A V DSs = 2 5 0 V 2092A P Channel Power MOSFET F e a tu r e s • Low O N re sista n c e . • V ery high-sp eed sw itch in g . •Low -voltage drive. b s o lu te M a x im u m R a ti n g s a t T a D rain to Source V oltage

on line ups circuit diagrams

Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm

SS 200 700

Abstract: 2sj281
Contextual Info: V q ss = 150V, N-channel Absolute maximum ratings at Ta = 25°C Type No. Package Vm m 2SK2260 PCP 150 VGSS •d Electrical characteristics at Ta = 2 5C h' m m m i2 0 1.2 3.5 VGS off min to max (V) 1.5 to 2.5 RoSftm) typ/maxat Vq s = 10V (û } 1.6/2.2 typ

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis

RD2004

Abstract: 2SK4087 2SK4097 2sk4086 2SC5707 2sk4096 SBX201C 2SC5706 2sk3615 half-bridge power supply
Contextual Info: ディスクリートデバイス 2009-4 三洋ディスクリートデバイス 環境に配慮した三洋ディスクリートデバイス ECoP R ディスクリートデバイスExPD パワーデバイス）は、 様々な分野の機器の小型化・薄型化・高効率化・高信頼性化に

inverter in 12v DC to 220v AC 400w circuit diagrams

Abstract: step down chopper tv tube charger circuit diagrams 220v 300w ac regulator circuit 2SC5707 equivalent RD2004 2sc6096 ech8 pattern 2sc5707 Flyback Transformers SANYO TV
Contextual Info: Discrete Devices 2009-5 SANYO Discrete Devices SANYO's environmentally-considered discrete ECoP contributes to the realization of comfortable life in various aspects. Discrete devices and ExPDs power device are environmentally-considered products that well address the needs (small size, low profile, high efficiency & high reliability)

Contextual Info: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch

J289

Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Contextual Info: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications

2SJ468

Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336
Contextual Info: Continued from previous page Electrical characteristics Ta = 25 V Absolute maximum ratings Type No. Package type Applications Rds(<w) @ Id •VGS VOSS (V) VGSS (V) ID (A) PD (W) Tdi OC) |Yfi|@ VDS ■ID RDS(mi) max(Q) Id (A) VGS (V) JA VDS (V) (A) 2S JI8 8

2sk3436

Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。