2SD235 Search Results

Contextual Info: Transistors SMD Type Product specification 2SD2359 Features Low collector-emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25

2SB1538

Abstract: 2SD2358
Contextual Info: Transistors 2SD2358 Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 1.0 1.0 • Features 0.65 max. 14.5±0.5 • Low collector to emitter saturation voltage VCE sat : < 0.15 V • Allowing supply with the radial taping

2SD234

Abstract: 2SD235 2SD235 Toshiba 2so234 SD235 2SD2354 2SB434 2SB435 transistor 2sd234 8bb4
Contextual Info: r SILICON NPN DIFFUSED JUNCTION TRANSISTOR o • • 2 s d 234 À 2 s d 235 U n it in mm Audio Power A m p l if i e r A p p l i c a t i o n s ; V CE sat = Q 8 V 1 0 .3 M A X . # 3 ,6 ± a 3 ( T yp .) d c = l A ) 2SD235 ^ : P c = 3 5 w (To = 3 5 ^ ) 3^9 2 S B 4 34 , Z S B i 35 t ^ 7') t

2SB435

Abstract: 2SD235
Contextual Info: 2SD235 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB435 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)

2SD234

Abstract: 2SD235 Toshiba transistor 2sd234 2SD235 2SD234Y toshiba 2sd234y 2SD235Y 2SD235O fbise 2SB435
Contextual Info: '> U 3 > N P N i£ |fc tt£ » 2SD234, 2SD235 SILICON NPN DIFFUSED JUNCTION TRANSISTOR O Audio Power Amplifier Applications • \ : V ce sat = 0. 2V(Ty p.) (Ic = lA ) 2SD235 • V9 : Pc = 25W(Tc = 25°C) • 2SB434, 2SB435 ¿ 3 y 7 ! ) A y ft i; 'O4 ~t\ • Complementary to 2SB434 and 2SB435.

2sb1538

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2358 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1538 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat): < 0.15 V

2SD2353

Contextual Info: TOSHIBA 2SD2353 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2353 Unit in mm PO W ER AM PLIFIER APPLICATIONS • • 10 ±0.3 High DC Current Gain : hpE = 800~3200 Low Collector Saturation Voltage : v CE sat = °-4V (TyP-) DC Current Gain Colleetor-Emitter Saturation

2SD2226K

Abstract: 2SD2351 VEBO-12V
Contextual Info: h 7 >vZ. £ /Transistors 2SD2226K/2SD2351 2SD 2226K 2SD2351 x e $ * y 7 J l ' 7 U - ? B N P N y ,j 3 > b 7 > v Z $ Epitaxial Planar NPN Silicon Transistor —flS 'h it^ iB ig ffl/G e n e ra l Small Signal Amp. * ^ ^ J i & B I / D i m e n s i o n s Unit : mm

d2353

Abstract: 2SD2353
Contextual Info: 2SD2353 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications Unit: mm • High DC current gain: hFE = 800 to 3200 • Low collector saturation voltage: VCE sat = 0.4 V (typ.) Maximum Ratings (Tc = 25°C) Characteristics

Contextual Info: 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor 50V, 0.15A 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S !External dimensions (Units : mm) !Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage.

2SD2359

Contextual Info: Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

2sb15

Abstract: 2SB1538 2SD2358
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2358 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1538 Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 • Low collector-emitter saturation voltage VCE(sat): < 0.15 V

2SB1537

Abstract: 2SD2357 2sb15
Contextual Info: Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 M Di ain sc te on na tin nc ue e/ d Unit: mm 0.4±0.08 0.5±0.08 1.5±0.1 2.5±0.1 +0.25 0.4max. 4.0–0.20 +0.1 45° 1.0–0.2 ● Low collector to emitter saturation voltage VCE sat .

2SB1537

Abstract: 2SD2357
Contextual Info: Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC.

vmt3

Contextual Info: 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor 50V, 0.15A 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V)

d2352

Abstract: 2SD2352
Contextual Info: 2SD2352 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2352 Power Amplifier Applications Unit: mm • High DC current gain: hFE = 800 to 3200 • Low collector saturation voltage: VCE sat = 0.3 V (typ.) Maximum Ratings (Tc = 25°C) Characteristics

2SD2359

Abstract: Silicon NPN Epitaxial Planar Type
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2359 Features Low collector-emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

BJW transistor

Abstract: SMD transistor MARKING bjw marking bjw MARKING BJV transistor bjv TRANSISTOR bjw 2SD2351 hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type General Purpose Transistor 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2358 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1538 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat): < 0.15 V

2SD235

Abstract: 2SB435
Contextual Info: SavantIC Semiconductor Product Specification 2SD235 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SB435 APPLICATIONS ·For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SB1539

Abstract: 2SD2359
Contextual Info: Transistor 2SB1539 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2359 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC.

2SD2171

Contextual Info: 2SD2537 / 2SD2171S 2SD2351 / 2SD2226K / 2SD2227S Transistors Medium Power Transistor 25V, 1.2A I 2SD2537 /2SD2171S •Features 1) 2) 3) •Absolute maximum ratings (Ta=25'C ) High O C current gain. High emitter-base voltage. (V c b o = LowVcEttM). (Max.

2SD2353

Contextual Info: TO SH IBA 2SD2353 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD2353 • High DC Current Gain : hpE - 800~3200 • Low Collector Saturation Voltage • V/~it! iA = Unit in mm 10 ±0.3 r ^3.2 ± 0.2 2.7±Q 2 CO cn ro o

at maga

Abstract: 2SB1537 2SD2357
Contextual Info: Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1537 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC.