2SD1820 Search Results

2SB1219A

Abstract: 2SD1820A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820A • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planar type 0.425 Unit: mm For general amplification Complementary to 2SB1219 and 2SB1219A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Low collector to emitter saturation voltage VCE(sat)

4946

Abstract: me 4946 4947 2SC5020 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
Contextual Info: - m % a « T y p e No. Manuf. = æ SANYO 2SC 4930 2SC 4931 z 2SC 4932 S 2SC 4933 2SC 4934 ^ 2SC 4935 3L 23C 4336 — 2SC 4940 — f 2 :v- NEC ÏZ. HITACHI s ± il FUJITSU ta t M ATSUS H I T A 2SC4838 ZdLOUUO 2SC4808 2SC4805 2SD2228 2SD1820 2SC3440 2SC4211

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Features  Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planar type (0.425) Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5°

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planer type 0.425 Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Large collector current IC • S-mini type package, allowing downsizing of the equipment and

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1219 and 2SB1219A Unit: mm • Features Collector to 2SD1820 30 VCBO 25 VEBO 5 V Peak collector current ICP 1 A Collector current IC 500 mA Collector power dissipation

2SB1219

Abstract: 2SB1219A 2SB1219G 2SD1820G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219G Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820G • Features ■ Package • Large collector current IC • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820, 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219 and 2SB1219A (0.425) Unit: mm 0.3+0.1 –0.0 • Features • Low collector-emitter saturation voltage VCE(sat)

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

2SB1219

Abstract: 2SB1219A 2SB1219G 2SD1820G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219G Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820G • Package • Large collector current IC • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

2sa1219

Abstract: 2SB1219 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistor 2SB1219, 2SB1219A Silicon PNP epitaxial planar type 0.425 Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Large collector current IC • S-Mini type package, allowing downsizing of the equipment

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistor 2SB1219, 2SB1219A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1820 and 2SD1820A Unit: mm • Features 1.25±0.1 0.425 0.3–0 +0.1 Ta=25˚C 0.65 1.3±0.1 ■ Absolute Maximum Ratings 0.425 1 0.65 ● 2.1±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820 • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C

IC DATE CODE

Abstract: IC marking TY
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic

2SB1219G

Abstract: 2SD1820G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820G Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219G • Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820A • Features  Package  Large collector current IC  S-Mini type package, allowing downsizing of the equipment and automatic

2SB1219

Abstract: 2SB1219A 2SB1219G 2SD1820G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219G Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820G • Package • Large collector current IC • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

2SB1219

Abstract: 2SD1820
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820 • Package  Large collector current IC  S-Mini type package, allowing downsizing of the equipment and automatic

2SB1219A

Abstract: 2SD1820A
Contextual Info: Transistors 2SD1820A Silicon NPN epitaxial planer type 0.425 Unit: mm For general amplification Complementary to 2SB1219A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Features 0.9±0.1 3 1 2 0.2±0.1 • Low collector to emitter saturation voltage VCE(sat)

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planar type 0.425 Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5° 2.1±0.1 0.2±0.1 (0.65) (0.65) Symbol Rating Unit VCBO −30

2SB1446

Abstract: 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632
Contextual Info: •Silicon Small Signal Transistors # General-use Low Frequency Amplifiers and Others Package No. SS-Mini Type (D1 ) S-Mini Type (D5) I 2SB1462 ' 2SB1218A . 2SD2216 2SD1819A : 2SB1219/A i 2SD1820/A i 2SA1791 i 2SC4656 Mini Type (D12) New S Type (034) ! 2SB709A

Contextual Info: Transistors IC SMD Type Product specification 2SD1820 Features Low collector-emitter saturation voltage VCE sat . 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage