2SC5226 Search Results

A1062-3

Abstract: 2SC5226A 2SC5226 A1062 ITR07919 ITR07920 ITR07921 ITR07922 ITR07923 ITR07924
Contextual Info: 2SC5226A 注文コード No. N A 1 0 6 2 三洋半導体データシート N NPN エピタキシァルプレーナ型シリコントランジスタ 2SC5226A VHF ~ UHF 広帯域低雑音増幅用 特長 ・低雑音である：NF=1.0dB typ f=1GHz 。 ・高利得である：⏐S21e⏐2=12dB typ(f=1GHz)。

Contextual Info: Ordering number:ENN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.

ZO 607 MA

Abstract: 2SC5226 uA 741 IC applications
Contextual Info: Ordering number:EN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.

Contextual Info: 2SC5226A Ordering number : ENA1062 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).

transistor marking LN4

Abstract: MARKING LN4 2SC5226A ITR07919 ITR07920 ITR07921 ITR07922 ITR07924 NPN 4401 transistor
Contextual Info: 2SC5226A Ordering number : ENA1062 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).

Contextual Info: 2SC5226A Ordering number : ENA1062A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz)

marking 579 sot363

Contextual Info: Ordering number : ENA1125A FH102A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz NPN Dual MCP6 Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package

IC 1709 CN

Abstract: 2SC5226 2SC5245 FH202 TS4162 ZS12 S21C TA-1708 D054471
Contextual Info: Ordering number:ENN6220 N PN Epitaxial Planar Silicon Composite Transistor FH202 SAÊÊYOI VCO OSC Circuit Applications Features Package Dimensions •Composite type with a buffer transistor 2SC5226 and a oscillator transistors (TS4162) contained in the

2SC5226

Abstract: ITR07919 ITR07920 ITR07921 ITR07922 ITR07923
Contextual Info: Ordering number:ENN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : ⏐S21e⏐2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.

SC 708-4

Abstract: 2SC5226A A1062 marking 624 sot-323
Contextual Info: 2SC5226A Ordering number : ENA1062A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz)

ZO 607 MA

Abstract: 2SC5226 ITR07919 ITR07920 ITR07921 ITR07922 zo 607
Contextual Info: 注文コード No. N 5 0 3 2 A 2SC5226 No. N5032A 30700 半導体ニューズ No.5032 とさしかえてください。 2SC5226 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・ 低雑音である：NF=1.0dB typ（f=1GHz）

5032 transistor

Abstract: 2SC5226 ZS22 1m 0880 Z0 607 TRANSISTOR A1t
Contextual Info: Ordering number: EN 5032 No.5032 2SC5226 N PN E pitaxial P la n ar Silicon T ransistor i VHF to UHF Wide-Band Low-Noise Amp _ Applications Features •Low noise : NF = l.OdB typ f= 1GHz . • High gain : I S21e I 2= 12dB typ (f= 1GHz). • High cutoff frequency : fT = 7GHz typ.

Contextual Info: Ordering number : ENA1062A 2SC5226A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C

FH102A

Abstract: 2SC5226A ITR10753 ITR10754 ITR10755 ITR10756 ZO 607 transistor
Contextual Info: FH102A Ordering number : ENA1125 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency

2SC5226

Abstract: VHF-UHF Band oscillator 2SC4401 2SC4402 2SC4403 2SC4404 2SC4405 2SC4406 2SC4407 2SC4853
Contextual Info: Continued frotn previous page A b solute maximum ratings Type No. Package typ» Applications E le ctrica l cha ra cte ristics Ta = 2 5 C fre v cE le cobevcB VCBO (V) VCEO 00 le (mÀ) (mW) (? ) (GHi) fr VCE (V) le (m A) UHF to S-band low-noise amplifier, oscillator

transistor zo 607

Abstract: 2SC5226 FC156 ZS22 sn 0426 FC 0137 transistor z 0607 ao41 ic 2429
Contextual Info: Ordering number : EN 5432 FC156 No.5432 i NPN Epitaxial Planar Silicon Composite Transistor SMIYO i High-Frequency Low-Noise Amp, Differential Amp Applications F eatures • Composite type with 2 transistors contained in the CP package currently in use, improving the

transistor c 5855

Abstract: ZO 607 transistor amp 0.1ghz 2SC5226 FH102
Contextual Info: Ordering number : EN5874 NPN Epitaxial Planar Silicon Composite Transistor FH102 High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the MCP unit: mm package currently in use, improving the mounting

equivalent ZO 607

Abstract: j200 transistor 2SC5226 2SC5245 FH202 TS4162
Contextual Info: Ordering number:ENN6220 NPN Epitaxial Planar Silicon Composite Transistor FH202 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TA-1130

Abstract: 2SC5226 FH102 equivalent ZO 607
Contextual Info: Ordering number : EN5874 NPN Epitaxial Planar Silicon Composite Transistor FH102 High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the MCP unit: mm package currently in use, improving the mounting

SC 708-4

Abstract: MCP6 Marking sanyo
Contextual Info: FH102A Ordering number : ENA1125A SANYO Semiconductors DATA SHEET FH102A NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting

RD1004

Abstract: 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006
Contextual Info: ディスクリートデバイス 2010-7 環境にやさしい製品 超アナログ技術を極めるPower ＆RFデバイス Power 電 源 市 場 耐熱性 高アバランシェ 高耐圧・大電流 高効率 高ESD ・パワーマネジメント （LCDPDP、PC電源、照明）

Contextual Info: FH102A Ordering number : ENA1125A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting

F527S

Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553
Contextual Info: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.