2SC5226A Search Results

A1062-3

Abstract: 2SC5226A 2SC5226 A1062 ITR07919 ITR07920 ITR07921 ITR07922 ITR07923 ITR07924
Contextual Info: 2SC5226A 注文コード No. N A 1 0 6 2 三洋半導体データシート N NPN エピタキシァルプレーナ型シリコントランジスタ 2SC5226A VHF ~ UHF 広帯域低雑音増幅用 特長 ・低雑音である：NF=1.0dB typ f=1GHz 。 ・高利得である：⏐S21e⏐2=12dB typ(f=1GHz)。

Contextual Info: 2SC5226A Ordering number : ENA1062 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).

transistor marking LN4

Abstract: MARKING LN4 2SC5226A ITR07919 ITR07920 ITR07921 ITR07922 ITR07924 NPN 4401 transistor
Contextual Info: 2SC5226A Ordering number : ENA1062 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).

Contextual Info: 2SC5226A Ordering number : ENA1062A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz)

marking 579 sot363

Contextual Info: Ordering number : ENA1125A FH102A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz NPN Dual MCP6 Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package

SC 708-4

Abstract: 2SC5226A A1062 marking 624 sot-323
Contextual Info: 2SC5226A Ordering number : ENA1062A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz)

Contextual Info: Ordering number : ENA1062A 2SC5226A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C

FH102A

Abstract: 2SC5226A ITR10753 ITR10754 ITR10755 ITR10756 ZO 607 transistor
Contextual Info: FH102A Ordering number : ENA1125 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency

Contextual Info: FH102A Ordering number : ENA1125 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency

SC 708-4

Abstract: MCP6 Marking sanyo
Contextual Info: FH102A Ordering number : ENA1125A SANYO Semiconductors DATA SHEET FH102A NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting

RD1004

Abstract: 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006
Contextual Info: ディスクリートデバイス 2010-7 環境にやさしい製品 超アナログ技術を極めるPower ＆RFデバイス Power 電 源 市 場 耐熱性 高アバランシェ 高耐圧・大電流 高効率 高ESD ・パワーマネジメント （LCDPDP、PC電源、照明）

Contextual Info: FH102A Ordering number : ENA1125A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting

RD2004

Abstract: 2SK4087 2SK4097 2sk4086 2SC5707 2sk4096 SBX201C 2SC5706 2sk3615 half-bridge power supply
Contextual Info: ディスクリートデバイス 2009-4 三洋ディスクリートデバイス 環境に配慮した三洋ディスクリートデバイス ECoP R ディスクリートデバイスExPD パワーデバイス）は、 様々な分野の機器の小型化・薄型化・高効率化・高信頼性化に

inverter in 12v DC to 220v AC 400w circuit diagrams

Abstract: step down chopper tv tube charger circuit diagrams 220v 300w ac regulator circuit 2SC5707 equivalent RD2004 2sc6096 ech8 pattern 2sc5707 Flyback Transformers SANYO TV
Contextual Info: Discrete Devices 2009-5 SANYO Discrete Devices SANYO's environmentally-considered discrete ECoP contributes to the realization of comfortable life in various aspects. Discrete devices and ExPDs power device are environmentally-considered products that well address the needs (small size, low profile, high efficiency & high reliability)

2SC5551

Abstract: SMA4306 FH102A cph6003 CPH6003A 15GN01CA NFC15-48S05-4 2SC5226 2sc5231 15GN01MA
Contextual Info: Ordering number : E I 0 0 8 2 Announcement Regarding the Discontinuation of High-frequency Transistors and Development of Replacement Products Thank you for using SANYO semiconductor products. Please note, as captioned above, we will be discontinuing the products listed in the table below.

Contextual Info: FH102A Ordering number : ENA1125 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency

FH102A

Abstract: ITR10754 2SC5226A A1125 ITR10753 ITR10755 ITR10756 ITR10757 ITR10758
Contextual Info: FH102A 注文コード No. N A 1 1 2 5 三洋半導体データシート N FH102A NPN エピタキシァルプレーナ型シリコン複合トランジスタ 高周波低雑音増幅差動増幅用 特長 ・従来の MCP 外形にトランジスタを 2 素子内蔵した複合タイプであり、実装基板効率が大幅にアップできる。