2SC3052 Search Results

Contextual Info: MCC TM Micro Commercial Components 2SC3052-E 2SC3052-F 2SC3052-G
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Halogen free available upon request by adding suffix "-HF"

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 2SC3052 TRANSISTOR（NPN ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.15 W（Tamb=25℃） Collector current ICM: 0.2 A Collector-base voltage

Contextual Info: SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.2 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range

2SC3052

Abstract: RT2C00M
Contextual Info: RT2C00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 SC-88 package. 1.25 0.2 RT2C00M is a composite transistor built with two 2SC3052 chips in FEATURE ① 0.65 ⑤ 2.0 Each transistor elements are independent.

2sc3052

Abstract: MARKING lf npn
Contextual Info: 2SC3052 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: 0.2 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 0. 35

2SC3052-G

Abstract: 2SC3052 2sc3052f
Contextual Info: MCC TM Micro Commercial Components 2SC3052-E 2SC3052-F 2SC3052-G
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Halogen free available upon request by adding suffix "-HF"

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain

2sc3052

Abstract: 2SC3052F 2SC3052E 2SC3052-F 2SC3052G transistor 2sc3052 MARKING lf npn transistor marking LF marking LE 2SC3052-E
Contextual Info: 2SC3052 0.2A , 50V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE A Excellent linearity of DC forward current gain. Low collector to emitter saturation voltage

2sc3052

Abstract: sot-23 Marking Lf
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.2 A ICM: Collector-base voltage

sot-23 Marking Lf

Abstract: sot-23 Marking LG 2sc3052 MARKING LG
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃

2sc3052

Abstract: h 125 tam MARKING lf npn sot-23 Marking LG Transistor hFE CLASSIFICATION Marking CE 2800B
Contextual Info: 2SC3052 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 3.COLLECTOR A L 1.BASE 3 2.EMITTER FEATURES n n n B S Top View 1 Excellent linearity of DC forward current gain 2 V G RoHS Compliant Product

2SC3052F

Abstract: 2SC3052-G 2sc3052 2SC3052-F
Contextual Info: MCC TM Micro Commercial Components 2SC3052-E 2SC3052-F 2SC3052-G
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

2sc3052

Abstract: sot-23 Marking LG
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain

2SC3052

Contextual Info: RECTRON 2SC3052 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.15 W (Tamb=25OC) * Collector current ICM : 0.2 A * Collector-base voltage V(BR)CBO : 50 V * Operating and storage junction temperature range

2SC4290A

Abstract: C 4927 2SD2356 2SC4289 2SD1407 4894 4902 2SC3997 2SC4289A 2SC4911K
Contextual Info: - 202 - S € Type No. 4t £ Manuf. -M H SANYO B TOSHIBA m NEC B AL HITACHI « ± a F U JIT S U fâ T MATSUSHITA 2SC3052 2SC 4894 të T 2SC4453 2SC343Î 2SC 4895 □—A 2SD1828 2SD1407 2SC 4896 S tL 2SC 4897 B tL 2SC3997 2SC4290A 2SC 4898 fâ T 2SC3750 2SC3310

lg smd transistor LF

Abstract: lg smd transistor transistor smd marking LE 2sc3052 if marking LE smd transistor MARKING lg 2sc3052 smd transistor marking LF
Contextual Info: Transistors SMD Type NPN Transistor 2SC3052 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 Power dissipation :PC=0.15W 0.55 Collector current :IC=0.2A +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

2SC3928A

Abstract: Transistor lss 2SC3728 2SC4357 2sc5211 8E sot-89 2SA1369 2SC5209 2sA1989
Contextual Info: # High-Density mounting equipments Continued Max. ratings Type Mo. Application Sinicftff* Vo» ¥<»o LPA 2SA1948 LVA 2SA1989 * ★ LVA 2SC3052 LVA 2SC3053 FM.RF.CON IF Si.PNP.E -25 — 120 -120 Si.PNP.E -50 -50 50 Si.NPN.E Si.NPN.E 30 50 -4 -5 -6 - 1A -100

sot-23 Marking Lf

Abstract: transistor marking LF sot-23 sot-23 Marking LG marking NF sot-23 transistor marking LF SOT-23 lf
Contextual Info: 2SC3052 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SA1235A

Abstract: RT3WLMM 100HZ 2SC3052
Contextual Info: PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3WLMM is a composite transistor built with Unit：mm 2.1 2SC3052 chip and 2SA1235A chip in SC-88 package. 2.0 Each transistor elements are independent.

2sc3052

Abstract: MARKING HRA MARKING XL
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3052 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING designed for low frequency voltage amplify application.

RT3WLMM

Abstract: 2SA1235A 100HZ 2SC3052
Contextual Info: PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3WLMM is compound transistor built with 2SC3052 chip and 2SA1235A chip in SC-88 package. FEATURE Silicon epitaxial type

2SC3052

Abstract: RT3CLLM
Contextual Info: PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3CLLM is a compound transistor built with two Unit：mm 2.1 2SC3052 chips in SC-88 package. 2.0 Each transistor elements are independent.

2SC2499

Abstract: 2SC3531 2SC3098 3771 nec 3771 2sc3355 hitachi 2SC4811K 2SC3761 2SC3124 2sc3841
Contextual Info: - 172 - m & a Type No. 2SC 3751 , 2SC 3752 -r 2SC 3753 w 2SC 3754 y 2SC 3755 *'' 2SC 3756 ✓ Z. Z Z. Z Z Z 2SC 3766 2SC 3769 2SC 3770 ¿ r 2SC 3773 2SC 3774 Z Z Z 2SC 3776 / 2SC 3777 2SC 3778 as % as as ^ ~ 2SC 2SC 2SC 2SC 2SC 2SC3979 2SC3734 2SC3052 2SC4423

2SC3052

Abstract: transistor 2sc3052 2sc3052 if
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC3052 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application.