2SC2873 Search Results

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2873 Unit in tmn POWER AMPLIFIER APPLICATIONS. 1.6MAX. 4.6MAX. POWER SWITCHING APPLICATIONS. 1.7MAX. r a Q4±Û05 - FEATURES: . Low Saturation Voltage : VCE sat =0.5V(Max.) (Ic-IA) + Q08 Q45-Û05 . High Speed Switching Time : tstg=l.Oa s (Typ.)

smd marking MY

Abstract: marking MY 2SC287 2SC2873 MY SMD MARKING
Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Type 2SC2873 Features Low saturation voltage: VCE sat = 0.5 V (max) (IC = 1 A). High speed switching time: tstg = 1.0 s (typ.). Small flat package. PC = 1.0 to 2.0 W Absolute Maximum Ratings Ta = 25 Parameter Symbol

Contextual Info: SILICON NPN EPITAXIALTYPE PCT PROCESS 2SC2873 Unit in mm POWER AMPLIFIER APPLICATIONS. 4.6MAX. POWER SWITCHING APPLICATIONS. 1.7MAX. 1.6 MAX. Q4±a05 FEATURES: . Low Saturation Voltage •• vCE(sat)=0.5V(Max.) u (IC=1A) +aoa a45~ao5 . High Speed Switching Time : tstg=1.0/<s(Typ.)

Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Type 2SC2873 Features Low saturation voltage: VCE sat = 0.5 V (max) (IC = 1 A). High speed switching time: tstg = 1.0 s (typ.). Small flat package. PC = 1.0 to 2.0 W (Mounted on Ceramic Substrate) Absolute Maximum Ratings Ta = 25

Contextual Info: 2SC2873 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2873 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) •

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage

Contextual Info: 2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 s (typ.)

Contextual Info: 2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High speed switching time: tstg = 1.0 µs (typ.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC2873 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 2 A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage

2SB600 NEC

Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
Contextual Info: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .

2SC2873Y

Abstract: Transistor 2SC2873 2sc2873
Contextual Info: 2SC2873 2SC2873Y SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * LOW SATURATION VOLTAGE. * FAST SW ITCHING. * COMPLEMENTARY TYPE - 2SA1213. PARTMARKING DETAILS - 2SC2873 - M Y 2SC2873Y - M O ABSOLUTE MAXIMUM RATINGS 2SC2873 2SC2873Y SYMBOL PARAMETER

2SC2873

Abstract: 2SA1213 Transistor 2SC2873
Contextual Info: 2SC2873 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High speed switching time: tstg = 1.0 µs (typ.)

Contextual Info: 2SC2873 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)2 Absolute Max. Power Diss. (W)1 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.70 h(FE) Max. Current gain.240

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT- 89-3L 2SC2873 TRANSISTOR NPN 1. BASE FEATURES  Small Flat Package  High Speed Switching Time  Low Collector-emitter saturation voltage  Complementary to 2SA1213

sl 1008 transistor

Abstract: 2SA1213 2SC2873
Contextual Info: TO SH IB A 2SC2873 T O S H IB A T R A N S IS T O R SILICO N NPN E P IT A X IA L T Y P E PCT PRO CESS 2SC2873 PO W ER A M P LIFIE R A P P LIC A T IO N S PO W ER SW ITC H IN G A P P LIC A T IO N S Low Saturation V oltage : V q e (sat) = 0.5V (Max.) (Iq = 1A)

2SA1213

Abstract: 2SC2873
Contextual Info: 2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 s (typ.)

Contextual Info: SMD Type Product specification 2SA1213 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 Absolute Maximum Ratings Ta = 25

Contextual Info: MCC TM Micro Commercial Components 2SC2873-O
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2873-Y Features • x x x • • • Halogen free available upon request by adding suffix "-HF"

D1647

Abstract: sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645
Contextual Info: - 246 - £ m *t % Marmi. T ype No. 2SD 1621 ^ H n e SANYO * M £ T O SHIBA □ P 'Ss m. NEC 2SD1898 2SC4357 2SC4672 2SD2403 2SD1119 2SC3438 2SD1834 ¥ 2SC2873 2SD 1624 / ¥ 2SC4541 2SD 1625 $ ^ 2SD 1631 2SD 1632 2SD 1633 ^ 2SD 1634 2SD 1636 2S0 1637 2SD1368

Contextual Info: 2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 s (typ.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC2873 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 2 A ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT- 89-3L 2SC2873 TRANSISTOR NPN 1. BASE FEATURES  Small Flat Package  High Speed Switching Time  Low Collector-emitter saturation voltage  Complementary to 2SA1213

2SC2873

Abstract: 2SA1213
Contextual Info: TOSHIBA 2SC2873 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2873 Unit in mm PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. Low Saturation Voltage : V q ^ ( s a t ) “ 0.5V (Max.) (Ic = l A) High Speed Switching Time : tgtg^l.O/^s (Typ.)