2SC2209 Search Results

2SC2209

Abstract: 2SA963
Contextual Info: •Power Transistors 2SC2209 2SC2209 Silicon NPN Epitaxial Planar Type A F Power Amplifier Complementary Pair with 2SA963 ■ Features Package Dimensions Uni t ! mm - • Large collector pow er dissipation Pc « 5W output in com plem entary pair with 2SA963

2SC2209

Abstract: 2SA963
Contextual Info: Power T ransistors 2SC2209 2SC2209 Silicon NPN Epitaxial Planar Type Package Dimensions A F Power Amplifier Complementary Pair with 2SA963 Uni t ! mm • Features • L arge collector pow er dissipation Pc • 5W o utp ut in com plem entary pair w ith 2SA963

IC 7505

Contextual Info: Power Transistors 2SA0963 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC2209 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with

2SA963

Abstract: 2SC2209
Contextual Info: Power T ransistors 2SA963 2SA963 Silicon PNP Epitaxial Planar Type • Package Dimensions AF Power Amplifier Complementary Pair with 2SC2209 ■ Features • Large collector pow er dissipation Pc • 4 ~ 5 W output in com plem entary pair with 2SC2209 ■ Absolute Maximum Ratings (Ta=25°C)

IC 7505

Contextual Info: Power Transistors 2SC2209 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA0963 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 5 W can be obtained by a complementary pair with

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 Unit: mm 7.5+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Collector-emitter voltage (Base open)

Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 Unit: mm 7.5+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol

2SC2209

Abstract: 2SA0963 2SA963
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 M Di ain sc te on na tin nc ue e/ d • Large collector power dissipation PC

Collector 5v npn TRANSISTOR

Abstract: 2SC2209 2SA963
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2209 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 40V(Min) ·High Collector Power Dissipation ·Complement to Type 2SA963 APPLICATIONS ·Designed for low frequency power amplification.

2SA963

Abstract: 2SC2209 20F200
Contextual Info: Power T ranslstors 2SA963 2SA963 Silicon PNP Epitaxial Planar Type • Package Dim ensions A F Pow er Am plifier C om plem entary Pair with 2 S C 2 2 0 9 ■ Features • Large collector pow er dissipation Pc • 4 ~ 5 W output in com plem entary pair with 2SC2209

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC2209 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC2209 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with

2SA0963

Abstract: 2SC2209
Contextual Info: Power Transistors 2SC2209 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA0963 Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 5 W can be obtained by a complementary pair with

2SC220

Abstract: 2SA963 2SC2209
Contextual Info: Inchange Semiconductor Product Specification 2SA963 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC2209 ·High collector power dissipation APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION

2SC2209

Abstract: 2SA963
Contextual Info: PANASONIC INDL/ELEKiSEfll} 72C D | t,T35SS4 DDDÔ7ÛD 5 _ ‘_ 2SA963 2SA963 '> ij i] V P N P 2SC2209 i 3 \s~f \ s — j ~ f î Z / S i P N P Epitaxial Planar U^ Power Amplifier lJ /C om plem entary Pair with

2SA0963

Abstract: 2SC2209
Contextual Info: Power Transistors 2SC2209 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA0963 Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 5 W can be obtained by a complementary pair with

2SA963

Abstract: 2SC2209
Contextual Info: SavantIC Semiconductor Product Specification 2SA963 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2209 ·High collector power dissipation APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION

2SC2209

Abstract: 2SA963
Contextual Info: SavantIC Semiconductor Product Specification 2SC2209 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA963 ·High collector power dissipation APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION

2SA963

Abstract: 2SC2209
Contextual Info: JMnic Product Specification 2SA963 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2209 ・High collector power dissipation APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SC2209 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA0963 2SA963 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 5 W can be obtained by a complementary pair with

2SC2209

Abstract: 2SA0963 2SC220
Contextual Info: Power Transistors 2SC2209 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA0963 Unit: mm 7.5+0.5 –0.1 2.9±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

2SA0963

Abstract: 2SA963 2SC2209
Contextual Info: Power Transistors 2SA0963 2SA963 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and