2SC18 Search Results

2SC1871A

Contextual Info: Inchange Semiconductor Product Specification 2SC1871A Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High switching speed APPLICATIONS ·For power switching applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol

2SC1847

Abstract: 2SA886
Contextual Info: JMnic Product Specification 2SC1847 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA886 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA768

Abstract: 2SC1826 4 PIN TO 220 IC
Contextual Info: JMnic Product Specification 2SA768 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1826 APPLICATIONS ・For low frequency power amplifier applicattions PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base

2sC1875

Contextual Info: JMnic Product Specification 2SC1875 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Designed for use in large screen color deflection circuits PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SC1827

Abstract: 2SA769
Contextual Info: JMnic Product Specification 2SC1827 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA769 ・Collector current :IC=4A ・Collector dissipation :PC=30W@TC=25℃ APPLICATIONS ・For use in low frequency power amplifier applications

2sa1015

Contextual Info: UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to 2SC1815 1 TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified

2SC1826

Contextual Info: Inchange Semiconductor Product Specification 2SC1826 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Collector current :IC=4A ·Collector power dissipation :PC=30W@TC=25℃ APPLICATIONS ·For use in low frequency power amplifier applications

2SC1893

Contextual Info: Inchange Semiconductor Product Specification 2SC1893 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For line-operated horizontal deflection output applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2sc1880

Contextual Info: Inchange Semiconductor Product Specification 2SC1880 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·For industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SC1894

Contextual Info: Inchange Semiconductor Product Specification 2SC1894 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage ・Low collector saturation voltage APPLICATIONS ・For color TV horizontal output applications PINNING see Fig.2

2SC1815

Abstract: 2SC1815L 2SA1015L-O 2SA1015LO 2SC1815 GR 2SA1015
Contextual Info: 2SC1815 L 東芝トランジスタ シリコンNPNエピタキシャル形 (PCT方式) 2SC1815(L) ○ 低周波電圧増幅用 ○ 励振段増幅用 • • • • • 単位: mm 高耐圧でしかも電流容量が大きい。 : VCEO = 50 V (最小), IC = 150 mA (最大)

2sc1846

Abstract: 2SA0885
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA887

Abstract: 2SC1848
Contextual Info: SavantIC Semiconductor Product Specification 2SA887 Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SC1848 APPLICATIONS ·Medium power amplifier PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol

2SC1880

Contextual Info: SavantIC Semiconductor Product Specification 2SC1880 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·For industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2sc1846

Abstract: 2SA885
Contextual Info: SavantIC Semiconductor Product Specification 2SC1846 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA885 ·Low collector saturation APPLICATIONS ·For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter

2SC1828

Contextual Info: SavantIC Semiconductor Product Specification 2SC1828 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=1A ·Power dissipation –PC=40W @TC=25 APPLICATIONS ·For power amplifier applications PINNING See Fig.2

2SC1819M

Contextual Info: SavantIC Semiconductor Product Specification 2SC1819M Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

TM 1628 IC

Abstract: IC TM 1628 Datasheet TM 1628 TM 1628 Datasheet 2SC1881 DSA003644
Contextual Info: 2SC1881 K Silicon NPN Triple Diffused ADE-208-882 (Z) 1st. Edition Sep. 2000 Application High gain amplifier power switching Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 6.8 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: TO SHIBA 2SC1815 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • High Voltage and High Current : V0 EO = 50V (Min.), 10 = 150mA (Max.)

Transistor GR 1815

Abstract: 2sc1815 transistor fe2c
Contextual Info: TO SHIBA 2SC1815 Transistor Unit in m m Silicon NPN Epitaxial Type 5 . 1 MAX. Audio Frequency General Purpose Amplifier Applications Driver Stage Applications Features • High Voltage and High Current - VCE0 = 50V Min. , Ic = 150mA (Max.) • Excellent hFE Linearity

2SC144

Abstract: 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A
Contextual Info: - 126 - m € T y p e No. Manuf. SANYO 3í 2 T O SHIBA B NEC B HITACHI ti S i l F U J ITSU ta t MATSUSHITA m ' h MITSUBISHI □ - A ROHM 2SC 1898 Ü3 r B $ f 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1899 SrBÍS 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC1845

2N3480

Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849

st 2sc1815

Abstract: 2SC1815 ST2SC1815 2SA1015
Contextual Info: ST 2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended.