2SB0621 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0621A Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592A • Features  Package  Low collector-emitter saturation voltage VCE(sat)

2SB0621

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0621 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to SD0592 • Package  Low collector-emitter saturation voltage VCE(sat)  High transition frequency fT

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
Contextual Info: Transistor 2SB0621, 2SB0621A 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0592 (2SD592) and 2SD0592A (2SD592A) Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). High transition frequency fT.

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A
Contextual Info: Transistors 2SD0592A 2SD592A Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat)

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
Contextual Info: Transistor 2SD0592, 2SD0592A 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB0621 (2SB621) and 2SB0621A (2SB621A) Unit: mm 5.0±0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat).

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0621A Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592A • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-92B-B1

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
Contextual Info: Transistor 2SB0621, 2SB0621A 2SB621, 2SB621A Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD0592 (2SD592) and 2SD0592A (2SD592A) 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector to emitter saturation voltage VCE(sat)

Contextual Info: Transistors 2SD0592 2SD592 Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2  Large collector power dissipation PC  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592 (2SD592) Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2  Large collector power dissipation PC

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A SC-43A
Contextual Info: Transistor 2SD0592A 2SD592A Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SB0621A (2SB621A) 4.0±0.2 5.1±0.2 5.0±0.2 • Large collector power dissipation PC • Low collector to emitter saturation voltage VCE(sat)

Silicon PNP epitaxial planar type For low-frequency

Abstract: 2SB0621 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0621 (2SB621), 2SB0621A (2SB621A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A) Unit: mm 4.0±0.2

2SB0621A

Abstract: 2SD0592A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0621A Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592A • Package  Low collector-emitter saturation voltage VCE(sat)  High transition frequency fT

IC tl 072

Abstract: 2SB0621 2SB621 2SD0592 2SD592
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592 (2SD592) Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 ue pl d in ea an c se ed lud

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0621 (2SB621), 2SB0621A (2SB621A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A) Unit: mm 4.0±0.2

2SB0621A

Abstract: 2SD0592A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0621A Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592A • Package  Low collector-emitter saturation voltage VCE(sat)  High transition frequency fT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592 (2SD592) Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 M Di ain

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A SC-43A
Contextual Info: Transistors 2SB0621 2SB621 , 2SB0621A (2SB621A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • Low collector-emitter saturation voltage VCE(sat)

2SB0621

Abstract: 2SB621 2SD0592 2SD592
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592 (2SD592) Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 ue pl d in ea an c se ed lud

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0621 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to SD0592 • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-92B-B1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and