A2073
Abstract: Transistor 2sa2073
Contextual Info: High voltage discharge, High speed switching, Low Noise 60V, 3A 2SA2073 Dimensions (Unit : mm) Features 1) High speed switching. ( tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically. (Typ. : 200mV at IC = 2.0A, IB = 200mA)
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2sa2073200mv200ma2sc5826+3a2073r1120atransistor 2sa2073
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NE 544
Abstract: 2SA2073
Contextual Info: SPICE PARAMETER 2SA2073 by ROHM TR Div. * 2SA2073 PNP BJT model * Date: 06/11/27 .MODEL 2SA2073 PNP + IS=700.00E-15 + BF=192.39 + VAF=100 + IKF=6.8965 + ISE=700.00E-15 + NE=1.7521 + BR=24.020 + VAR=100 + IKR=32.385E-3 + ISC=57.252E-12 + NC=1.4443 + NK=.76838
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2sa2073q2sa207300e-15385e-3+5252e-12000e-35899e-375e-12ne 544
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a2073
Contextual Info: High voltage discharge, High speed switching, Low Noise 60V, 3A 2SA2073 Dimensions (Unit : mm) Features 1) High speed switching. ( tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically. (Typ. : 200mV at IC = 2.0A, IB = 200mA)
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a2073
Abstract: catalog transistor 2SA2073 2SC5826 Transistor 2sa2073
Contextual Info: 2SA2073 Transistors High voltage discharge, High speed switching, Low Noise −60V, −3A 2SA2073 zFeatures 1) High speed switching. ( tf : Typ. : 20ns at IC = −3A) 2) Low saturation voltage, typically. (Typ. : −200mV at IC = −2.0A, IB = −200mA)
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2sa2073-200mv-200ma2sc5826+3a2073catalog transistortransistor 2sa2073
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a2073
Abstract: 2SA2073 Transistor 2sa2073 2SC5826
Contextual Info: 2SA2073 Transistors High voltage discharge, High speed switching, Low Noise −60V, −3A 2SA2073 zDimensions (Unit : mm) ATV 0.5 4.4 0.9 1.0 0.65Max. (1) (2) (3) 2.54 2.54 (1) Emitter (2) Collector (3) Base zApplications High speed switching, Low noise
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2sa207365max-200mv-200ma+32sc5826a2073transistor 2sa2073
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C5825
Abstract: transistor C5825 2SA20 2SC5825 2SA2073 Transistor 2sa2073
Contextual Info: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 !External dimensions (Unit : mm) 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 1.0 0.5 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 0.75 !Features 1) High speed switching.
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2sc5825sc-63ot-428200mv+52sa2073c5825transistor c58252sa20transistor 2sa2073
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C5825
Abstract: 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073
Contextual Info: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and
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2sc5825200mv2sa2073sc-63+4ot-428c5825transistor c5825transistor 2sa2073
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mn2510
Abstract: 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"
Contextual Info: Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number NPN PNP STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 2STN1360 2STN2360 STN1802 STN851 STN951* STN715 STN817A IC [A] VCE [V] VCE sat @
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ot-223stn878stn724stn690a+16stn749stn888stn826stn790a2stn25402stn1550mn25102sc5200, 2sa1943, 2sc5198sanken mn2510transistor replacement guide hsd882skec sot89ztx617transistor replacement guidereplacement sanken mn25102sc5198 cross references2sa1941 "cross reference
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2SC5734K
Abstract: 2sc5917 2SC5734 2SA2054
Contextual Info: Excellence in Electronics 2005 Ver.1 T ransistor New Products Pari No. B V ceo lc Ip N PN M [A] [A] 2SA2048K 2SC5730K 30 1 2 2SA2054K 2SC5734K 90 0.5 1 Package SMT3 ^ Pc=0.2W " PNP Pari No. Package TSMT3 Pc=0.5W * W Package ATV P c=1W J L 'V BV ceo [V] hF:
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2sa2048k2sa2054k2sc5730k2sc5734k+92sa20482sa21132sa21342sa20902sc59162sc59842sc59172sc57342sa2054
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Contextual Info: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
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pioneer mosfet audio amp ic
Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
Contextual Info: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great
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2008-febsc-75aot-41650p5876e+10pioneer mosfet audio amp ic12v energy light circuit diagramvmn3 packagedtc143t datasheettransistor smd catalogequivalent transistors for umd2nsmd ya transistor2sd22112sa1576ub2sc6114
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2SC6144
Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.
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c5826
Abstract: 2SC5826 2SA2073 2SA20
Contextual Info: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA)
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c5826
Contextual Info: Power transistor 60V, 3A 2SC5826 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.
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C5825
Abstract: 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073
Contextual Info: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 !External dimensions (Unit : mm) 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 1.0 0.5 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 0.75 !Features 1) High speed switching.
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2sc5825sc-63ot-428200mv+42sa2073c5825transistor c5825transistor 2sa2073
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C5825
Abstract: 2SC5825 2SA2073
Contextual Info: Power transistor 60V, 3A 2SC5825 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.
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2SA1576UB
Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
Contextual Info: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.
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c5826
Abstract: 2SA2073 2SC5826
Contextual Info: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA)
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c5826
Abstract: 2SA2073 2SC5826
Contextual Info: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and
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