2SA1832FT
Abstract: 2SC4738FT
Contextual Info: 2SA1832FT シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1832FT ○ 低周波増幅用 • 単位: mm 高耐圧です。 : VCEO = −50 V • コレクタ電流が大きい。 : IC = −150 mA (最大) • 電流増幅率が高い。
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2SA1832FT
Abstract: 2SC4738F
Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity
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2SA1832FT
Abstract: 2SC4738F
Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity
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2SA1832FT
Abstract: 2SC4738F
Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/
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2SA1832FT
Abstract: 2SC4738F
Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/
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Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity
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2SA1832FT
Abstract: 2SC4738F
Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = −50 V · High current: IC = −150 mA (max) · High hFE: hFE = 120 to 400 · Excellent hFE linearity
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2SA1832FT
Abstract: 2SC4738FT
Contextual Info: 2SA1832FT シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1832FT ○ 低周波増幅用 • 単位: mm 高耐圧です。 : VCEO = −50 V • コレクタ電流が大きい。 : IC = −150 mA (最大) • 電流増幅率が高い。
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2SA1832FT
Abstract: 2SC4738FT
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • • • • • Unit: mm High Voltage: VCEO = 50 V High Current: IC = 150 mA (max) High hFE: hFE = 120 to 400 Excellent hFE Linearity
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2SA1832FT
Abstract: 2SC4738FT
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications Unit: mm • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity
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lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.
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bce0030cs-167bce0030dlm2804+9marking 513 sod-323land dpu 230toshiba diode 1ss416 footprint5252 f solarsot23 2fvtah8n401kic sj 4558zener diode reference guidern4983
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7ic mb4213nec 12f triacf10p048ktc3114 equivalentsmd transistor marking 02ndiode pj 57 ss14bc517 equivalent
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ESM 740
Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.
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sce0003aesm 740transistor smd t04 51d245a+7lm2804transistor smd t04solar garden light controller 4 pin2fu smd transistortransistor t04 smdpnp octal darlington transistor arrays dipwb126
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2n2222/aktn2222/a2sa1150kta1272+162sa15102sb546a2n2369/aktn2369/a2sa1151kta1266lm8550ktd20262sc2320 equivalentnec 12f datasheet2n3904 motorola2sc2240 equivalent2n3906 motorola2sc19832n5400 motorola2sd1960
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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mn1280kgt50n60kdabc547 smd transistorkia1117af+6transistor smd zgy6 smd transistormb4213y4 smd transistorsmd transistor zaakgt25n120nda
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2sc4738ft
Abstract: 2SA1832FT
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
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2sc4738ft
Abstract: 2SA1832FT IC5010
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
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Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
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2SA1832FT
Abstract: 2SC4738FT
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications Unit: mm • High Voltage: VCEO = 50 V · High Current: IC = 150 mA (max) · High hFE: hFE = 120 to 400 · Excellent hFE Linearity
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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kia7900pitc7sh04fukic7sh04fusc604+16kac3301qnm51943kia7042ap/aftc7sh08fukic7sh08fult1937oz960khb*9d5n20pmb4213kia78*pimn1280f10p048kia7812amje13007mb4213 equivalenttransistor smd n2 3j
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2SA1832FT
Abstract: 2SC4738FT
Contextual Info: 2SC4738FT シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4738FT ○ 低周波増幅用 ○ AM 増幅用 単位: mm • 高耐圧です。 : VCEO = 50 V • コレクタ電流が大きい。 : IC = 150 mA (最大) • 電流増幅率が高い。
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Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • • • • • Unit: mm High Voltage: VCEO = 50 V High Current: IC = 150 mA (max) High hFE: hFE = 120 to 400 Excellent hFE Linearity
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TC7SZ08FU
Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
Contextual Info: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type
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3407c-0209tc7sz08fulm2804tc7s14f+7sot-24 ledtc7sz126futc7sz125fusot-24te85l ftc7w04f2sc2240 equivalent
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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usfb053usfb13usfb13ausfb13l+16usfb14usfz10vusfz11vusfz12vusfz13vusfz15vkf6n602sk3850 equivalentkf9n25kf7n50mdf10n65b transistorpanasonic zenerkf10n60kia278r12pi equivalentkid65003ap equivalentkia578r05
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