2SA1150 Search Results

2SC2710

Abstract: 2SA1150
Contextual Info: 2SC2710 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2710 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)

2SA1150

Abstract: 2SC2710
Contextual Info: 2SA1150 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1150 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)

2SA1150

Abstract: 2SC2710
Contextual Info: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

25C2710

Abstract: 2SA1150 2SC2710
Contextual Info: TOSHIBA 2SC2710 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm FOR AUDIO AMPLIFIER APPLICATIONS • • High DC Current Gain : hjpg (1) = 100~320 Complementary to 2SA1150 4.2M A X . M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

N1H1

Contextual Info: 2SA1150 TOSHIBA TOSHIBA TRANSISTOR 2 SILICON PNP EPITAXIAL TYPE PCT PROCESS S A 1 1 5 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2 MAX. • High IrpE : ^FE = 100~320 • Complementary to 2SC2710. 0.55MAX. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

Contextual Info: 2SA1150Y Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC2710

Abstract: 2SA1150
Contextual Info: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

Contextual Info: 2SA1150O Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: TOSHIBA 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2710 FOR AUDIO AM PLIFIER APPLICATIONS • High DC Current Gain : • Complementary to 2SA1150 U nit in mm 4.2M AX. hpE (i) = 100~320 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

A1150 transistor

Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type A1150 2SA1150 transistor a1150 2SC2710 sA1150
Contextual Info: 2SA1150 TOSHIBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LO W FREQUENCY AM PLIFIER APPLICATIONS 4.2M AX. • • High hpE : hRE —100~320 Complementary to 2SC2710. 0.55MAX. M A X IM U M RATINGS (Ta = 25°C) SYMBOL

2SC2710

Abstract: 2SA1150 C1602
Contextual Info: 2SC2710 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2710 Unit in mm FOR AUDIO AMPLIFIER APPLICATIONS • • High DC Current Gain : Complementary to 2SA1150 (i) = 100~320 4.2M AX. 0.55M AX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

A1150 transistor

Abstract: 2SA1150 2SC2710 A1150
Contextual Info: 2SA1150 TO SH IBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2M AX. • • High hpE • hpE -100~320 Complementary to 2SC2710. 0.55M AX. i-0 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SA1150

Abstract: 2SA115 2SC2710
Contextual Info: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 · Complementary to 2SC2710. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SA1150

Abstract: 2SC2710
Contextual Info: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SC2710

Abstract: 2SA1150
Contextual Info: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

Contextual Info: TO SH IB A 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS n r ? MT 7 m i n m w FOR AUDIO AMPLIFIER APPLICATIONS • High DC C urrent Gain : • Complementary to 2SA1150 U nit in mm 4.2MAX. hjr>E(l)-100~320 0.55MAX. MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SA1150 TOSHIBA 2 S A 1 1 50 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LO W FREQUENCY AMPLIFIER APPLICATIONS 4 .2 M A X . • • High hpE : hFE = 100~320 Complementary to 2SC2710. 0 .5 5 M A X - M A X IM U M RATINGS (Ta = 25°C)

2SA1150

Abstract: 2SC2710
Contextual Info: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SC2710

Abstract: 2SA115 2SA1150
Contextual Info: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 · Complementary to 2SA1150 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

b 817

Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
Contextual Info: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)