2N6661 Search Results

Contextual Info: -BTSSKte 2N6661 JANTX, JANTXV N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY _ TO-39 TO-205AD h O (V) (A) 90 4 0.86 V (B R )D S S BO TTO M VIEW •d 2 GATE 3 & C AS E-D R A IN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

2N6661

Abstract: 2N6660 2N6661 transistor 2N6659 max 1988
Contextual Info: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.

2N6661

Abstract: VN88AFD
Contextual Info: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS

2N6155

Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS

4900 SIEMENS

Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A
Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS

TN2524

Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
Contextual Info: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)

Contextual Info: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • VDSS = 90V , ID = 0.9A, RDS ON = 4.01 • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available

Contextual Info: 2N6661JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS

Contextual Info: 2N6661 MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES 5.08 (0.200)

2N6661

Contextual Info: SEME 2N6661 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • Switching Regulators

2N6660

Abstract: 2N6661 MPF6660 2N6659 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711
Contextual Info: 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for high-current, highspeed power switching applications such as switching power supplies, ,CMOS logic, microprocessor or ~L-to-tiigh

TO-205AD

Abstract: 2N6661 VN88AFD
Contextual Info: 2N6661/VN88AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D D D

marking code vishay SILICONIX to-39

Abstract: jantx2n6661
Contextual Info: 2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications

Contextual Info: T em ic 2N6661JAN/JANTX/JANTXV_sm^ix N-Channel Enhancement-Mode MOS Transistors Product Summary V BR DSS M in (V) r DS(on) M ax (Q ) V GS(Ui) (V ) Id (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits • • • • • • • • • •

Contextual Info: 2N6660 2N6661 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON I d (ON) b v dgs (max) (min) TO-39 60V 3 .0 ÌÌ 1.5A 2N 6660 90V 4 .0 ÌÌ 1.5A 2N6661 Advanced DMOS Technology High Reliability Devices

JANTX2N6661

Abstract: JAN2N6661 JANTXV2N6661 JANTX2N6661 reliability VNDQ09
Contextual Info: 2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications

a0728

Contextual Info: 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: 2N6661CSM4 MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 90V ID 0.9A RDS on 4.0 Dimensions in mm (inches) 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.23 rad. (0.009) 0.64 ± 0.08 (0.025 ± 0.003)

2N6661

Abstract: 9006 LE17
Contextual Info: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661M1A • VDSS = 90V , ID = 1.0A, RDS ON = 4.0Ω • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO-257AA Package High Reliability Screening Options Available

2N6660

Abstract: 2N6661
Contextual Info: 2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 3.0Ω 1.5A 2N6660 90V 4.0Ω 1.5A 2N6661 TO-39 Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process

TO-205AD

Contextual Info: 2N6661JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOS Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS

2N6661

Contextual Info: 2N6661 90V N-channel Enhancement - Mode Vertical DMOS FET 7.95 Transistors MO. Page 1 of 1 Enter Your Part # Home Part Number: 2N6661 Online Store 2N6661 Diodes 90V N -channel Enhancement - Mode Vertical DMOS FET Transistors Integrated Circuits Optoelectronics

2N6661

Contextual Info: 2N6661 MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 90V ID 0.9A RDS on 4.0Ω Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)

2N6660

Abstract: 2N6659 2N6661 TP 1322 2N6661 transistor
Contextual Info: 2N 6659 2N 6660 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed fo r application as low-power, high-frequency inverters and line drivers. Features: • Direct interface to C-MOS, T T L , etc.