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    2N5543

    Abstract: 2N5544
    Contextual Info: 2flE D TELEDYNE COMPONENTS • ÖWbQa HIGH VOLTAGE OQObSSl 7 2N5S43 2N5544 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 559 FEATURES • HIGH BVDGO> 300V 2N5S43 • LOW CAPACITANCE APPLICATIONS • HIGH VOLTAGE CURRENT SOURCE


    OCR Scan     		2n5s432n55442n5543 PDF

    TRANSISTOR BC 545

    Abstract: NPN transistor SST 117 transistor npn Epitaxial Silicon SST 117 2N5641 bi 370 transistor e transistor fn 155 2n5642 bi 370 transistor NPN/TRANSISTOR BC 545 2N5643
    Contextual Info: MM m tm F?F- Products m M ic m s e m i 140 Commerce Drive Montgomery ville, PÂ 18936' Tel: ,215 631-9840 2N5641 2N5642/2N5643 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS 175MHz • FREQUENCY ■ VOLTAGE 28V TO 40 W • HIGH POWER OUT . HIGH POWER GA!N


    OCR Scan     		2n56412n5642/2n5643230mhz175mhz+14sd120osdt2242ns641sd1222-102n56422n564transistor bc 545npn transistor sst 117transistor npn epitaxial silicon sst 117bi 370 transistor etransistor fn 155bi 370 transistornpn/transistor bc 5452n5643 PDF