2N5671 Search Results

2N5672

Abstract: 2N5671 2N5671JAN 15ADC 2N5671 JAN
Contextual Info: TECHNICAL DATA 2N5671 JAN, JTX, JTXV 2N5672 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/488 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N5672

Abstract: 2N5671
Contextual Info: SavantIC Semiconductor Product Specification 2N5671 2N5672 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current ,high speed APPLICATIONS ·Intended for high current and fast switching industrial applications PINNING PIN DESCRIPTION

Contextual Info: GENERAL 3 9 1 6 590 ^ Ta SEMICONDUCTOR GENERAL SEMICONDUCTOR A General Semiconductor Industries, Inc • d F J b tiô s td 72C 0 1 9 3 0 D □ □ d i cî 3 0 7 ~ b 33 NPN TRANSISTOR CHIP « 5 Q U B R E TI COMPANY Typical Device Type: 2N1724, 2N5671, 2N5672

2N5671

Abstract: 2N5672 2N567 2N5872
Contextual Info: 2N5671 2N5672 POWER TRANSISTORS 30A, 150V, Fast Switching, Silicon NPN Mesa DESCRIPTION These glass passivated power transistors combine fast-switching, low saturation voltage and rugged Es/b capability. They are designed for use in switching regulators, converters, Inverters and

BUW23

Contextual Info: M U L T IE P IT A X IA L P LAN A R - TO -3 c o n tin u e d NPN BUX41 , BUX41N BUX42 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 2N6496 ' to« Vcio (V) Veto (V) lc (*) P» (W) 250 220 300 150 120 120 150 120 150 150 150 200 160 250 90 75 90 120 90 120

Contextual Info: 7*^237 ¿57 002^353 1 • I-33-13 SGS-TH O M SON iuiOTsisioes 2N5671 2N5672 S G S-THOMSON 3DE ]> HIGH CURRENT FAST SWITCHING APPLICATIONS DESCRIPTION The 2N5671 and 2N5672 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal case. They are especially intended for high current, fast

2N5672

Abstract: 2n5671
Contextual Info: Inchange Semiconductor Product Specification 2N5671 2N5672 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current ,high speed APPLICATIONS ・Intended for high current and fast switching industrial applications PINNING PIN DESCRIPTION

2N5672

Abstract: 2N5671 2N5671 JAN
Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/488 Devices Qualified Level 2N5671 JAN JANTX JANTXV 2N5672 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

TA7323

Abstract: 2N5671 2N5872
Contextual Info: 2N5671, 2N5672 File Number 383 High-Current, High-Power, High-Speed Silicon N-P-N Planar Transistors For Switching and Amplifier Applications in Military, industrial and Commercial Equipment Feature*: • M a x im u m S a fe -A re a -o f-O p e ra tio n C urves Is/» lim it lin e b e g in n in g a t 24 V

Contextual Info: SEMELAB LTD 37E T> | fil33167 0000D23 3 1 TVpe No. Reliability Polarity Option 2N5656 2N5657 2N5663 2N5664 2N5665 SCREEN HI-REL HI-REL NPN NPN NPN NPN NPN 2N5666 2N5667 2N5671 2N56722N5675 HI-REL HI-REL CECC CECC HI-REL NPN NPN NPN NPN PNP 2N5676 2N5679 2N5680

2N5671

Contextual Info: 2N5671 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 488 Devices Qualified Level 2N5671 JAN JANTX JANTXV 2N5672 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N5672

Abstract: 2N5671
Contextual Info: NPN 2N5671 – 2N5672 HIGH CURRENT FAST SWITCHING APPLICATIONS The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3. They are especially intended for high current, fast switching industrial applications. ABSOLUTE MAXIMUM RATINGS

Contextual Info: May 1998 SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N5661 2N5662 2N5663 2N5664 2N5664-SM 2N5665 2N5665-SM 2N5666 2N5666-SM 2N5667 2N5671 2N5671 CECC 2N5671 CECC 2N5672 2N5672 CECC 2N5672 CECC 2N5675 2N5676 2N5679 2N5680 2N5681 2N5681-SM

2N5671

Abstract: LT 5245
Contextual Info: TYPES 2N5671, 2N5672 N-P-N SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIGH-SPEED SW ITCH IN G APPLICATIO N S 03 - I C < 20 mJ Reverse Energy Rating I“ "O r m m w Min V B R C EO of 120 V (2N 5672) -i IS) i g M in t y of 50 M H z at 10 V , 2 A

2N5330

Abstract: 2N5672 2N4002 2N4003 2N5331 2N5584 2N5671 2N5733 2N5734 2N5966
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N4002 2N4003 2N5330 2N5331 2N5584 2N5671 2N5672 2N5733 2N5734 2N5966 SDT6338 SDT6339 SDT6340 SDT6341 SDT8151 SDT8152 SDT8153 SDT8154 SDT8155 SDT8156 SDT8157 SDT8158 SDT8159 SDT8301 SDT8302 SDT8303 SDT8304 SDT44301

Contextual Info: 2N5671 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 2N5671 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5672

Abstract: 2N5671
Contextual Info: Search Results Part number search for devices beginning "2N5671" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5671 NPN TO3 90V 30A 20 100 2/15 50MHz

2N5672

Abstract: 2N5671 81TI
Contextual Info: ¿2&M0SPEC HIGH POWER NPN SILICON POWER TRANSISTORS NPN High-Current, High-Speed, High-Power Type for Switching and Amplifier Applications. 2N5671 2N5672 FEATURES: * DC Current Gain hFE = 20 ~ 100 @ lc = 15 A ,VCE=2.0 V * Low VCE SAT < 0.75 V @ lc=15A, lB=1,2A

Contextual Info: 2N5671+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)120º V(BR)CBO (V)120 I(C) Max. (A)30 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)12m¶ @V(CBO) (V) (Test Condition)110 V(CE)sat Max. (V).75 @I(C) (A) (Test Condition)15

Contextual Info: CRIMSON SEMICONDUCTOR INC ^ DE | 2514011, 0000336 t 2514096 C R IMSON SEMIC O N D U C T O R INC 00338 MULTIEPITAXIAL PLANAR - TO-3 continued Vcm Vein (V) (V) NPN BUX41 B U X41N B U X4 2 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 2N6496 * ton 250 220

2N5672 RCA

Abstract: TA7323 2N5672 transistor RCA 2n5672 2N5671 transistor RCA 383 rca 2n5672 rca 383 transistor 2n56 Transistors bd 133
Contextual Info: ~QÎ 387 5 0 8 1 DE | 3 ô 7 S a f i ï ^ D Ï Ï l 7 1 5 ^ o ^ | ~ G E SOLID STATE “ 01E 17129 D T"' H igh Speed Power Transistors. 2N5671, 2N5672 File Number 383 High-Current, High-Power, High-Speed Silicon N-P-N Planar Transistors F o r S w it c h in g a n d A m p lifie r A p p lic a tio n s in

2N5871

Abstract: 2N5872
Contextual Info: "D l 3875081 G E SO LID DE | 3 f l 7 S G f l l STATE DIDy?iST~Q “ 01E 17129 D 7"”" High Speed Pow er Transistors- 2N5671, 2N5672