2N4124 F Search Results

2N4123

Abstract: 2N4123RLRM 2N4124 2N4124G
Contextual Info: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage Value VCEO 2N4123 2N4124 Collector−Base Voltage Vdc 30 25 VCBO 2N4123

2N4124 MOTOROLA

Abstract: 2N4123 MOTOROLA 2N4124 2N4123
Contextual Info: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

2N4123

Abstract: 2N4124 2N4123 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

SOT23 MARK Y3

Contextual Info: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*

2N4124 national

Abstract: 2N3904 SOT-23 2N3904 2N4124 MMBT4124
Contextual Info: 2N4124 / MMBT4124 D iscrete P O W E R & S ig n a l T echnologies National S e m ic o n d u c t o r '“ MMBT4124 2N4124 SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to

2N4124

Contextual Info: TOSHIBA TRANSISTOR 2N4124 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICBO*50nA(Max.) lEBO“50nA(Max.) @ Vcb =20V (3 Ve B“3V . Low Saturation Voltage : vCE(sat)=0.3V(Max.)

TO226AA

Contextual Info: 2N4124 Small Signal Transistor NPN TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) Features • NPN Silicon Epitaxial Transistor for switching and amplifier applications. • Especially suitable for AF-driver and low-power output stages.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N4126 TRANSISTOR PNP 1. EMITTER FEATURES z PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. z As Complementary Type, The NPN Transistor 2N4124 is

Contextual Info: na, 20 STERN AVE. NEW JERSEY 07081 U.3A TELEPHONE; 973 376-2022 (212) 227-6008 FAX (973) 376-0060 2N4124 NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCH ABSOLUTE MAXIMUM RATINGS tMsximum Temperatures Storage Temperature Operating Junction Temperature

Contextual Info: 2N4124 Small Signal Transistors NPN TO-92 _ FEATURES ♦ NPN Silicon Epitaxial Transistor for switching and amplifier applications. ♦ Especially suitable for AF-driver and low-power output stages. ♦ As complementary type, the PNP transistor 2N4126 is recommended.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N4124 TRANSISTOR NPN 1. EMITTER FEATURES z High DC Current Gain z High Transition Frequency 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2N4126

Abstract: 2N4124
Contextual Info: 2N4126 -0.2 A, -25 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   TO-92 PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. Complementary of the 2N4124

Contextual Info: TOSHIBA 2N4124 Transistor Unit in m m Silicon NPN Epitaxial Type & 1UAX. For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICB0 = 5 0 nA Max. @ VCB = 20V - IEB0 = 50nA (Max.) @ VEB = 3V • Low Saturation Voltage

Contextual Info: 45E D • ^0^7230 0017754 1 IT0S4 TOSHIBA TRANSISTOR 2N4124 SILICON NPN EPITAXIAL TYPE PCT PROCESS TO SHI BA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICB0= 50nA(Max.) lEBO=50nA(Max.)

Contextual Info: 2N4124 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • For General Purpose Switching and Amplifier Applications Especially Suitable for AF Driver and Low Power Output Stages E A TO-92 B Mechanical Data • • • • Case: TO-92, Plastic

2n3904 2n3906

Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64

Contextual Info: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: Vceo = 2N4123: 30V 2N4124: 25V • C ollector Dissipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :2N 4123

2n4208

Abstract: FTS04124 27575 2n4239 4235 schlumberger 2N4123 2N4124 2N4125 2N4126
Contextual Info: FAIRCHILD SEMICONDUCTOR " ~S4 F e J| 34LTL74 00B7S71 T 3469674 FAIRCHILD SEMICONDUCTOR 84D 27571 2N4123/FTS04123 2N4124/FTS04124 f a ip c h il d A Schlum berger C om pany NPN Small Signal General Purpose Am plifiers & Switches • • • • . . . 25 V Min (2N/FTS04124)

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bb53R31 ODBfllSE A IAPX 2N 4123 2N4124 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for low-power, small-signal audio­ frequency applications for consumer service. P-N-P complements are 2N4125 and 2N4126.

Contextual Info: MCC Micro Commercial Components TM Features NPN Silicon General zThrough Hole TO-92 Package zCapable of 625mWatts of Power Dissipation zCase Material: Molded Plastic. UL Flammability • 2N4123 2N4124
  omponents 20736 Marilla Street Chatsworth

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N 4123 2N 4124 NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Unit Collector-Emitter Voltage VCEO 30 25 Vdc Collector-Base Voltage v CBO 40 30 Vdc Emitter-Base Voltage

2n3904 npn fairchild

Abstract: 2N3904 2N4124 MMBT4124 2n3904 sot 23 SOT23B
Contextual Info: 2N4124 MMBT4124 C E C TO-92 BE SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904

Contextual Info: S iM C O M D U C T O R 2N4124 MMBT4124 SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose am plifier and switch. The useful dynam ic range extends to 100 m A as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50