29F200 Search Results
29F200 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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29F200 |
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2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory | Original | 147.12KB | 22 | ||
29F200 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 29.23KB | 1 | ||
29F200 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 29.23KB | 1 |
29F200 Price and Stock
Macronix International Co Ltd MX29F200CBTI-70GIC FLASH 2MBIT PARALLEL 48TSOP |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MX29F200CBTI-70G | Tray | 1,842 | 1 |
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MX29F200CBTI-70G | Tray | 10 Weeks | 960 |
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MX29F200CBTI-70G | 5,894 |
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Resistors Inc HVLR1529F200KK9RES 200K OHM 1% 15W AXIAL |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HVLR1529F200KK9 | Bag | 102 | 1 |
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Resistors Inc HVLR1029F200KK9RES 200K OHM 1% 10W AXIAL |
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HVLR1029F200KK9 | Bag | 59 | 1 |
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Resistors Inc HVLR1029F200MK9RES 200M OHM 1% 10W AXIAL |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HVLR1029F200MK9 | Bag | 39 | 1 |
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Resistors Inc HVLR1529F200MK9RES 200M OHM 1% 15W AXIAL |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HVLR1529F200MK9 | Bag | 23 | 1 |
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29F200 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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tmp95fy64
Abstract: TMP95FY64F tmp95fy CT 55H TLCS-90 LFFP100-P-1414-0 95fy64 QFP100P
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16-bit TMP95FY64F pl/dane/uklady-scalone/Tmp95fy64f pl/dane/ukladyscalone/Tmp95fy64f TMP95FY64 TMP95FY64 TMP95FY64F tmp95fy CT 55H TLCS-90 LFFP100-P-1414-0 95fy64 QFP100P | |
Contextual Info: PRELIMINARY — 29F200AT/29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements |
OCR Scan |
Am29F200AT/Am29F200AB 44-pin 48-pin | |
555H
Abstract: MX29F200B MX29F200T
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MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/15/2001 NOV/12/2001 555H MX29F200B MX29F200T | |
AF200
Abstract: TMP95FW54A TMP95FW54AF xxhx
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P95FW54A 16-Bit TMP95FW54AF TMP95FW54A 100-pin 900/H TLCS-90/900 AF200 TMP95FW54AF xxhx | |
Contextual Info: H ig h p e r f o r m a n c e 256K X8/128K X16 5 V C M O S F la s h E E P R O M « II A 29F200 A 2 5 6 K X 8 / 1 2 8 K X 1 6 C M O S Flash EEPROM Preliminary information Features • S ector a rc h ite c tu re - One 16K; tw o 8K; one 32K; and three 64K byte sectors |
OCR Scan |
8/128K AS29F200T-120TI AS29F200B-5SSC AS29F200B-70SC AS29F200B-70SI AS29F200B-90SC AS29F200B-90SI AS29F200B-120SC AS29F200B-120SI AS29F200T-S5SC | |
Contextual Info: Preliminary information •■ 29F200 I I 5V 256KX8/128Kx 16 CMOS Flash EEPROM Features • Organization: 256Kx8 or 128K xl6 • Sector architecture - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom) |
OCR Scan |
AS29F200 256KX8/128Kx 256Kx8 AS29F200B-70TC AS29F200B-70TI AS29F200T-70TC AS29F200T-70TI AS29F200B-70SC AS29F200B-70SI AS29F200T-70SC | |
29F200TCContextual Info: FLASH MEMORY CMOS 2M 256K x 8/128K x 16 BIT 29F200TC-55-70-90/29F200BC-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs |
OCR Scan |
8/128K M29F200TC-55-70-90/MBM29F200BC-55/-70/-90 48-pin 44-pin D-63303 F9811 29F200TC | |
Contextual Info: 29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz |
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MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte DEC/20/1999 PM0549 | |
29F200TContextual Info: 29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz |
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MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/15/2001 NOV/12/2001 29F200T | |
Contextual Info: SGS-THOMSON raD»H[Lll e'inM l)i!lD(ei 29F200T 29F200B 2 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical |
OCR Scan |
M29F200T M29F200B x8/x16, | |
st10 Bootstrap
Abstract: IEEE-695 ST10
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nanoMODUL-164 EK166 nanoMODUL-164 L-455e D-55135 st10 Bootstrap IEEE-695 ST10 | |
winbond 25080
Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
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2732B 27C100 27HB010 27C256 27HC64 27C128 27C040 7128A winbond 25080 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB | |
29f400 isp
Abstract: PXAG49 RTC-8563 TTL catalog J15-20
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RS-485 RS-485-Steuerung. L-479e D-55135 29f400 isp PXAG49 RTC-8563 TTL catalog J15-20 | |
IEEE166
Abstract: C167CR C16X IEEE-695 ST10 AP292201 ST10 PROGRAMMING C basic st10 Bootstrap canbus demo
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phyCORE-167 C166/ST10 phyCORE-167 L-548e D-55135 IEEE166 C167CR C16X IEEE-695 ST10 AP292201 ST10 PROGRAMMING C basic st10 Bootstrap canbus demo | |
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Rectifier t2d
Abstract: t2d diodes T2D 53 BYW29 BYW29-200 BYW29F-200 ISOWATT220AC "T2D"
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BYW29 ISOWATT220AC) T0220AC ISOWATT220AC T0220AC BYW29-200 ISOWATT220AC BYW29F-200 7cJ2ci237 Rectifier t2d t2d diodes T2D 53 BYW29-200 BYW29F-200 "T2D" | |
TMP95CU54
Abstract: TMP95FW54AF
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TMP95FW54A 16-Bit TMP95FW54AFQ TMP95FW54A 100-pin 900/H TLCS-90/900 TMP95CU54 TMP95FW54AF | |
HY29F200
Abstract: HY29F200B HY29F200T
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HY29F200T/B 48-Pin HY29F200 16-Bit) G-70I, T-70I R-70I G-70E, T-70E, R-70E HY29F200B HY29F200T | |
29F200 flash
Abstract: amd96 29F200 A29F200
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125deg MAX1487 29F200 AS8201 29F200 flash amd96 29F200 A29F200 | |
29f200-90
Abstract: 29F200 flash tcp 8111 D370 344c1 es 3880 fm AS29F200T
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OCR Scan |
AS29F200 256Kx8/128 128Kxl6 29f200-90 29F200 flash tcp 8111 D370 344c1 es 3880 fm AS29F200T | |
Contextual Info: 29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz |
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MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0549 | |
G100
Abstract: IEEE-695 PXAC37
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phyCORE-PXAC37 FlashTools16W phyCORE-PXAC37 L-478e D-55135 G100 IEEE-695 PXAC37 | |
555H
Abstract: MX29F200B MX29F200T
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Original |
MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0549 JUN/15/2001 555H MX29F200B MX29F200T | |
Contextual Info: H i j j h P i - r f o r m a i K <.• L BB SV C M O S I la s h 1 I P R O M 2 A S 2 l> I ' 2 0 0 A S6K X 8/IZ8K x I6 6 K x 8 / I 2 8 K x 1 6 C M O S Jf /.isii I'I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture |
OCR Scan |
256KX8 128KX16 e-120TC -120TI S29F200B -55SC S29F200B-70SC -90SC | |
Contextual Info: AM DH 5.0 29F200B V- o nl y 2 Megabit 256 K X 8-BK/128 K X 16-Blt CMOS 5.0 Volt-only, Boot Sector Flash Memory Flas DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology |
OCR Scan |
Am29F200B 8-BK/128 16-Blt) Am29F200A 20-year |