29F10 Search Results

microprogram

Abstract: CI 4584 branch conditional unconditional instruction
Contextual Info: 29F10 29F10 Connection Diagrams - M icroprogram C ontroller 4 Ö ]d 3 Y4 [ I d4[ T 39] Y3 lila ? Ys G l The 29RPu jpTaJBigt»&peed b ipo lar m icroprogram con tro ller. It is intended fo r use in r o d fftffttnipm e sequence o f execution of m icro in stru ctio n s

M29F100

Abstract: M29F100B M29F100T
Contextual Info: w , SGS-THOMSON M 29F100T M 29F100B k7 #» RitlDÊlMIlilLIKËinSMQtÊS 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME

Contextual Info: £yj SGS-THOMSON D S IILI©DMIi!!lll©i M 29F102B 1 Mbit x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 1Ojas typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

D7 29F

Contextual Info: 29F10 29F10 Connection Diagrams Microprogram Controller -y4| d„ 40Jd3 T [T H ]y 3 IMHO; y5[]l D is c n p j The 2 9 H fb jra J T O » a t> e e d b ipo lar m icroprogram con tro ller. It is intended fo r use in sequence o f execution of m icro in stru ctio n s

branch conditional unconditional instruction

Abstract: D7 29F
Contextual Info: 29F10 29F10 Connection Diagrams M icroprogram C ontroller - O The 29 >eed bipolar microprogram controller. It is intended for use in he sequence of execution of m icroinstructions stored in m ic rb p io fa m The 29F10 provides a 12-bit address

Contextual Info: SGS-THOMSON M 29F100T M 29F100B 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical

AM29F032B 04h

Abstract: 19945 AM29F010
Contextual Info: Am29Fxxx, 5.0 Volt-only Flash AMD* Device Bus Operations, Command Definitions, and Write Operations Status INTRODUCTION This section contains descriptions about the device bus operations, command definitions, and write operation status of the Am29Fxxx, 5.0 volt-only family of Flash

29f1008

Abstract: 29f100
Contextual Info: FINAL AMDB 29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Embedded Erase algorithm autom atically

Contextual Info: 29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 35ns ■ FAST PROGRAMMING TIME: 8^s typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word

Contextual Info: 29F100T 29F100B SGS-THOMSON I I I I M J ì ILIì M W I I È Ì 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

Contextual Info: AMD£I FINAL 29F100T/Am29F1OOB 1 Megabit 131,072 x8-bit/65,536 x16-bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ ■ — Automatically programs and verifies data at

29F100T

Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100
Contextual Info: 29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

MX29F100T

Contextual Info: INDEX ADVANCED INFORMATION 29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 30mA maximum active current

29F800 equivalent

Contextual Info: PA48TS29F-800 Data Sheet 48 pin TSOP socket/44 pin DIP 0.6” plug Supported Device/Footprints Adapter Construction The PA48TS29F adapter converts the pinout of the AMD 29F800 flash memories in 48 pin TSOP packages to the 44 pin DIP equivalent. While this device is not available in 44 pin DIP

29F100T

Contextual Info: ADVANCED INFORMATION 29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz

Contextual Info: 29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz

74F161 PC

Abstract: 74F163PC 74f500 74f558 74F164PC 74F548PC 74F138d 74F547PC transistor f630 74F253DC
Contextual Info: F a ir c h ild A d v a n c e d S c h o t t k y T L $ 3. HANDLING PRECAUTIONS FOR SEMICONDUCTOR COMPONENTS The follow ing handling precautions should be observed for oxide isolation, shallow junction processed parts, such as FAST or 100K ECL: 1. All Fairchild devices are shipped in conducting foam or anti­

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

PA32-32

Abstract: PA32-32Z 32-32ZR lcc 20 test socket clcc 32 socket lcc 28 socket 32 pin plcc socket J-Lead, plcc clcc 28 socket footprint plcc 32
Contextual Info: PA32-32 Z Data Sheet 32 pin PLCC socket/32 pin DIP 0.6” plug Supported Device/Footprints Adapter Construction This adapter allows programming of many 32 pin PLCC, CLCC and LCC devices in their 32 pin DIP footprint. The adapter is made up of 2 sub-assemblies. They assemble via

Contextual Info: FINAL AMDZ1 A m 2 9 F 1 0 0 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Sim plifies system-level power requirem ents

Contextual Info: FINAL AMDZ1 A m 2 9 F 1 0 0 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Sim plifies system-level power requirem ents

Contextual Info: 29F100T 29F100B 1 Mbit 128Kb x 8 or 64Kb x 16, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)