28SEP2007 Search Results

Z117

Abstract: X117 LIS331AL LIS331ALTR
Contextual Info: LIS331AL MEMS inertial sensor: 3-axis - ±2g analog output “nano” accelerometer Features • Single voltage supply operation ■ ±2.0g full-scale ■ Output voltage, offset and sensitivity are ratiometric to the supply voltage ■ Factory trimmed device sensitivity and offset

Contextual Info: 2STC5242 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO > 230V ■ Complementary to 2STA1962 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a NPN transistor manufactured

2-282836-5

Contextual Info: TH I S DRAW ING IS UNPUBLI S H E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS FOR CORPORATION. ALL PUBLICATION RIGHTS LOC D I ST RE V I S I ONS RESERVED. D E S C R I P T I ON REVISED H9 TEST ECO-I 0 - 0 2 47 6 CR 09DEC2010 FAC . 35 7 3-282836-7 5

STX13005

Abstract: STX13005-AP X13005 ecopack STX13005G
Contextual Info: STX13005 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamp CFL

Contextual Info: LIS331DL MEMS motion sensor 3-axis - ±2g/±8g smart digital output “nano” accelerometer Features • 2.16 V to 3.6 V supply voltage ■ 1.8 V compatible IOs ■ <1 mW power consumption ■ ±2g / ±8g dynamically selectable full-scale ■ I2C/SPI digital output interface

Contextual Info: TH I S DRAW ING IS UNPUBLI SHED. RELEASED BY C O P Y R I G HT 2 0 TYCO ELECTRONICS FOR CORPORATION. 20 PUBLICATION ALL R 1G H T S LOC D I ST R E V 00 RESERVED. LTR DESCRIPTION RLSD; B A C K I NG NPR D WN DATE N S D 0 7 - 093 SH GG 28SEP2ÛÛ7 APVD STR I P

c2003

Abstract: SAW filter marking code SF0869BA02618S marking code SAW
Contextual Info: 869 MHz SAW Filter 2 MHz Bandwidth Part Number: SF0869BA02618S DESCRIPTION • • • Miniature 869 MHz SAW IF Filter. 3 x 3 mm Ceramic LCC package. RoHS compliant TYPICAL PERFORMANCE SPECIFICATION Parameter Center Frequency FC Insertion Loss 868 – 870 MHz

bq294xx

Abstract: termistor ntc 103AT BATTERY termistor SLUS723 clock reset, core ic circut 20-PIN bq20z75 bq20z75DBT bq20z75DBTR
Contextual Info: bq20z75 www.ti.com SLUS723 – JULY 2007 SBS 1.1-COMPLIANT GAS GAUGE AND PROTECTION-ENABLED IC WITH IMPEDANCE TRACK FEATURES 1 • Next Generation Patented Impedance Track™ Technology accurately Measures Available Charge in Li-Ion and Li-Polymer Batteries

SN74V263

Abstract: SN74V263-6 SN74V273 SN74V273-6 SN74V283 SN74V283-6 SN74V293
Contextual Info: SN74V263, SN74V273, SN74V283, SN74V293 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS669D – JUNE 2001 – REVISED FEBRUARY 2003 D D D D D D D D D D D Choice of Memory Organizations – SN74V263 – 8192 × 18/16384 × 9

Contextual Info: STX13005 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamp CFL

2STA1962

Abstract: 2STC5242 JESD97
Contextual Info: 2STA1962 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC5242 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a PNP transistor manufactured

BTA12

Abstract: triac bta12 800 triggering BTA12 600V triac bta12 triggering triac bt 136 T1210-800G Triac BTB12 600 B T12xx BTA12 Series T1250
Contextual Info: BTA12, BTB12, T12xx 12 A Snubberless , logic level and standard triacs Features A2 • Medium current triac ■ Low thermal resistance with clip bonding ■ Low thermal resistance insulation ceramic for insulated BTA ■ G A1 A2 A2 High commutation 4Q or very high

SN74AUC1G66DBVR

Contextual Info: SN74AUC1G66 SINGLE BILATERAL ANALOG SWITCH www.ti.com SCES386K – MARCH 2002 – REVISED OCTOBER 2007 FEATURES 1 • Available in the Texas Instruments NanoFree Package • Wide VCC Range of 0.8 V to 2.7 V • Sub-1-V Operable • Low Power Consumption, 10- A Max ICC

BQ29410DCT3R

Abstract: BQ29410DCT3RE6 BQ29410DCTR BQ29411DCT3R BQ29411DCT3RE6 BQ29411DCTR BQ29412DCT3RE6 BQ29412DCTR BQ29412DCTRG4
Contextual Info: bq29410, bq29411, bq29412, bq29413 bq29414, bq29415, bq29419 www.ti.com SLUS669F – AUGUST 2005 – REVISED JULY 2007 VOLTAGE PROTECTION FOR 2-, 3-, OR 4-CELL Li-Ion BATTERIES 2nd-LEVEL PROTECTION FEATURES • • • • • • 2-, 3-, or 4-Cell Secondary Protection

Contextual Info: SN10KHT5542, SN10KHT5543 OCTAL TTL-TO-ECL TRANSLATORS WITH OUTPUT ENABLE SDZS001A – D3136, AUGUST 1988 – REVISED DECEMBER 1988 Copyright  1988, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments

Contextual Info: UCC3957Ć1, UCC3957Ć2, UCC3957Ć3, UCC3957Ć4 SLUS236B – JANUARY 1999 – REVISED SEPTEMBER 2002 THREEĆ OR FOURĆCELL LITHIUMĆION PROTECTOR CIRCUIT FEATURES D D D D D D D D D DESCRIPTION Three- or Four-Cell Operation Two-Tier Overcurrent Limiting 30-µA Typical Supply-Current Consumption

TC 9151 P

Abstract: STX13005 STX13005-AP X13005 ecopack
Contextual Info: STX13005 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamp CFL

Contextual Info: TH I S DRAW ING I S C O P Y R I G H T UNPUB LI SHED. 20 R E L E A S E D BY TYCO E L E C T R O N I C S C O R P O R A T IO N FOR ALL 20 P U B L I C A T I O N R I G H T S LOC REV I S IONS D I ST R E S E R V E D . LTR D E S C R I P T I O N RELEASED REVISED Al

LIS302DL c source

Abstract: LIS302DL self test example LGA-16 land pattern LIS302DL X Y Z LIS331DLTR DO13 DO14 DO15 LIS331DL sak 2.5
Contextual Info: LIS331DL MEMS motion sensor 3-axis - ±2g/±8g smart digital output “nano” accelerometer Preliminary Data Features • 2.16V to 3.6V supply voltage ■ 1.8V compatible IOs ■ <1mW power consumption ■ ±2g / ±8g dynamically selectable full-scale ■

TPD3E001DRLR

Abstract: TPD2E001 TPD3E001 TPD3E001DRLRG4 TPD3E001DRSR TPD3E001DRYR TPD3E001DRYRG4 TPD4E001 TPD6E001 2BR marking
Contextual Info: TPD3E001 LOW-CAPACITANCE 3-CHANNEL ±15-kV ESD-PROTECTION ARRAY FOR HIGH-SPEED DATA INTERFACES www.ti.com SLLS683D – JULY 2006 – REVISED APRIL 2007 FEATURES APPLICATIONS • • • • • • • • • • • • • • • ESD Protection Exceeds

panasonic Radial lead MSL level

Abstract: PTR08060W TR-332
Contextual Info: PTR08060W www.ti.com SLTS289 – AUGUST 2007 6-A, 4.5-V to 14-V INPUT, NON-ISOLATED, ADJUSTABLE WIDE-OUTPUT, SWITCHING REGULATOR FEATURES APPLICATIONS • • • • • • • 1 • • • • • • • Up to 6-A Output Current Wide Input Voltage Range 4.5 V to 14 V

Triac BTB12 600 B

Abstract: T12xx btb12 TRIAC BTB 16 600 packaging BTA12 triac bta12 800 triggering
Contextual Info: BTA12, BTB12, T12xx 12 A Snubberless , logic level and standard triacs Features A2 • Medium current triac ■ Low thermal resistance with clip bonding ■ Low thermal resistance insulation ceramic for insulated BTA ■ G A1 A2 A2 High commutation 4Q or very high

Contextual Info: 2STA1962 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO > -230V ■ Complementary to 2STC5242 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a NPN transistor manufactured

Contextual Info: 2STA1962 High power PNP epitaxial planar bipolar transistor Preliminary Data Features • High breakdown voltage VCEO > -230V ■ Complementary to 2STC5242 ■ Fast-switching speed ■ Typical fT= 30MHz 3 Application 2 1 Audio power amplifier TO-3P Description