28F512V Search Results

Contextual Info: JAN * « *' IIIIICRTRLYST MWi t I S E M I C O N D U C T O R 2231 CALLEDELUNA, SANTA CLARA, CA 95054 Telephone: 408 748-7700 C A T 28F512V 5 512K Bit (64Kx8) CMOS FLASH MEMORY DESCRIPTION The C A T 2S F512V 5 is a high speed 6-iK x 8-bit F lash erasable and electrically rep ro gram m able

UAA 1008

Contextual Info: CRTRLYST s e H i c o N o u c T o n 2231 CALLE DE LUNA SANTA CLARA, CA 9S0S4 Ttbphon»: 408 748-7700 Fax: (408) 980-8209 28F512V5 512K (64K x 8) CMOS FLASH MEMORY DESCRIPTION FEATURES The 28F512V5 Rash memory is a high speed 64K x 8-bit electrically erasable and reprogram­

CX825

Contextual Info: IIIIICRTRLYST mmi II S E M I C O N D U C T O R Preliminary 28F512V5/28F512V5I 512K-Bit CMOS FLASH MEMORY FEATURES • Fast Read Access Time: 120/150/200 ns ■ Stop Timer for Program/Erase ■ Low Power CMOS Dissipation: -Active: 120 mA max CMOS/TTL levels

2SF512

Abstract: AT28F512 CICO NO 2
Contextual Info: JAN * 13* A 2231 CALLE DE LUNA, SANTA CURA, CA 95054 Telephone: 408 748-7700 C 28F512V5 512K Bit (64Kx8) CMOS FLASH MEMORY DESCRIPTION The CAT2SF512V5 is a high speed 6-iK x 8-bit Flash erasable and electrically reprogram m able memory, ¡ceaily suited for systems requiring on ­

D28F512-120P1C4

Abstract: d28f512 N28F512-120P1C4 28F512-150P1C4 N28F512-150P1C4 N28F512-200P1C4 29020 N28F512-200
Contextual Info: INTE L CORP intel • M EM OR Y/ LO GI C SOE D ■ H&2bl 7h Q0b72fl2 S ■ V -^ -/5 -2 7 28F512 512K (64K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 iia Typical Byte-Program

Contextual Info: Preliminary 28F512V5/28F512V5I 512K-Bit CMOS FLASH MEMORY FEATURES • Fast Read Access Time: 120/150/200 ns ■ Stop Timer for Program/Erase ■ Low Power CMOS Dissipation: -Active: 120 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels) -Standby: 100 ^A max (CMOS levels)