28F256 RELIABILITY DATA Search Results

28F256

Contextual Info: a F IN A L Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High performance - ■ Low power consumption - I 30 mA maximum active current 100 \>A maximum standby current No data retention power Compatible with JEDEC-standard byte-wide

intel 28F256

Abstract: 28F256 CMOS FLASH 28F256 intel 28F256 plcc 1H90 N28F256-170P1C2 capacitor ja8 intel power supply 450 watt circuit diagram 27F256 D28F256
Contextual Info: INTEL CORP MEMORY/LOGIC 5QE D • 4flShl7b GQh72fciO t. ■ lÄ iL ß G ü f lO IiM V T -U -1 3 -2 1 28F256 256K (32K x 8) CMOS FLASH MEMORY ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 100 ¿is Typical Byte-Program

28F256 CMOS FLASH

Contextual Info: SGS-THOMSON M28F256 1ILG 256K 32 x 8 CMOS FLASH MEMORY ADVANCE DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 jus. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.

Contextual Info: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ ■ CMOS Low power consumption Flasherase Electrical Bulk Chip-Erase

Contextual Info: AMD£I Am28F256 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase

Contextual Info: n FIN A L Am28F256 Advanced 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS Low power consumption ■ ■ — 0.5 second typical chip program ■ — 32-pin PDIP — 32-pin PLCC

Contextual Info: / U T SGS-THOMSON *7 # M28F256 i]D g ® iL i© ir ® © [iO (g i CMOS 256K (32K x 8 FLASH MEMORY FAST ACCESS TIME: 100ns 1,000 ERASE/PROGRAM CYCLES 12V PROGRAMM ING VOLTAGE TYPICAL BYTE PROGRAMM ING TIM E 100us (PRESTO F PROGRAMMING) ELECTRICAL CHIP ERASE IN 1s RANGE

Contextual Info: FINAL AMD£I Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time

Contextual Info: FINAL A M D tl Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time

Contextual Info: FINAL A M D tl Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time

M28F256A

Abstract: M28F256 PDIP32 PLCC32
Contextual Info: ¿ = 7 S C S -TH O M S O N “ 7 # M28F256 ^ D lE S Œ tIl(g ¥ ^ (s )iD © i CMOS 256K (32K x 8) FLASH MEMORY • FAST ACC ESS TIME: 100ns ■ 1,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMM ING TIME 100ns (PRESTO F PROGRAMMING)

Contextual Info: 55E D Æ 7 • TRSIEB? Q03773D 7Qt. ■ SGTH T-HC-I3-ZÇ, S G S -IH O M S O N S G S- THOMSON * 7 # . M 2 8 F 2 5 6 CMOS 256K 32K x 8 FLASH MEMORY ■ ■ ■ ■ FAST ACCESS TIME: 100ns 1,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 100ns

28f256

Contextual Info: /= 7 S G S -TH O M S O N M28F256 dD g^ [iLi(gir (Q iD(gi CMOS 256K (32K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 120ns ■ 1,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 100|is (PRESTO F PROGRAMMING) ■ ELECTRICAL CHIP ERASE IN 1s RANGE

Contextual Info: Prelim inary CAT28F256 L icen sed In tel second source 256K-Bit CMOS Flash Memory FEATURES • Fast Read Access Time: 90/120/150 ns ■ Stop Tim er for Program/Erase ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -S tan d b y: 1 mA max (TTL levels)

Contextual Info: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time -55 oC to

ut28F256

Abstract: 28F256 UT28F256QLE UT28F256QL
Contextual Info: NOTE: This product has been replaced with UT28F256QLE or SMD 5962-96891 device types 09 and 10. 1 Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet December 2002 FEATURES ‰ Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory

28F256

Abstract: UT28F256
Contextual Info: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet May 2002 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time -55 oC to

UT28F256

Contextual Info: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet November 2002 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time -55 oC to

Contextual Info: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet April 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for availability

Contextual Info: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet October 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time -55 oC to

28F256

Abstract: UT28F256
Contextual Info: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet March 2000 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for availability

Contextual Info: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Preliminary Data Sheet i t i s #f i l i f i i < l i f i 8f t f l i i l October 1998 FEATURES □ Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory Supported by industry standard programmer

intel 28F256

Abstract: CAT28F256 intel 28F256 flash 28F256 intel 28F256 dip 28F256 CMOS FLASH
Contextual Info: LV S T P re lim in a ry CAT28F256 L icen sed In tel second source 256K-Bit CMOS Flash Memory FEATURES • Fast Read Access Time: 90/120/150 ns ■ Stop Timer for Program/Erase ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -S tandby: 1 mA max (TTL levels)

231369

Abstract: 27F256
Contextual Info: in te T P fô S O B M M V 27F256 256K 32K x 8 CMOS FLASH MEMORY Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming — 100 jas Typical Byte-Program