28F100 Search Results

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

28f1000

Abstract: M-Systems pcmcia pcm210 fdd power connector tffs PCM-211 EMM386 pcmcia ethernet TRUEFFS EPROM M-Systems
Contextual Info: PCM-3110C/3112 PCM-220D1 User Manual P/N: 2006311001 Copyright Notice This document is copyrighted, 1997. All rights are reserved. The original manufacturer reserves the right to make improvements to the products described in this manual at any time without notice.

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

28F1000

Abstract: 28F1000PC 28f1000p MX28F1000 MXIC MX
Contextual Info: m PKELIIflilOliiARV 28F1000 A MACDOWX. 1M-BIT *l 28K x 8 CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 90/120/150 ns • Low power consumption - 50mA maximum active current

28f1000

Abstract: 1 MEGA OHM RESISTOR MX28F1000P
Contextual Info: INDEX 28F1000P 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 70ns Vcc:5V±5%; CL:35pF 90/120ns(Vcc:5V±10%; CL:100pF) • Low power consumption – 50mA maximum active current – 100uA maximum standby current

PDIP32

Abstract: PLCC32 electronic signature plcc32 pin socket
Contextual Info: SGS-THOMSON ¡y 28F1001 1024K 128 x 8 CMOS FLASH MEMORY ADVANCE DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 us. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.

28f1000

Abstract: block diagram for automatic room power control 28F1000P-12 28f1000-70 1 MEGA OHM RESISTOR 28F1000P-70 MX28F1000P 28F100
Contextual Info: 28F1000P 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 70ns Vcc:5V±5%; CL:35pF 90/120ns(Vcc:5V±10%; CL:100pF) • Low power consumption – 50mA maximum active current – 100uA maximum standby current

Contextual Info: SGS-THOMSON ¡y 28F1001 1024K 128 x 8 CMOS FLASH MEMORY A D V AN C E DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 us. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.

MX28F1000P

Abstract: 28f1000 INTRODUCTION OF AUTOMATIC ROOM power CONTROL 32 pin EPROM MX28F1000PPC-90C4
Contextual Info: Introduction Selection Guide 28F1000P 1M-BIT 128K x 8 CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 70ns(Vcc:5V±5%; CL:35pF) 90/120ns(Vcc:5V±10%; CL:100pF) • Low power consumption – 50mA maximum active current

Contextual Info: •voac MX28F1 OOOP 1 M-BIT 1 2 8 K x 8} CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 90/120 ns • Low power consumption - 50mA maximum active current - 100(iA maximum standby current • Programming and erasing voltage 12V ± 5%

LEAPER-3

Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
Contextual Info: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.

27C32

Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
Contextual Info: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512

MXIC MX

Abstract: mx28F1000PPC-15 28F1000 28f1000p
Contextual Info: m A MACBONX. INC._ _M X 2 8 F 1 POOP 1M-BIT Il 8 8K x 8 CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 90/120/150 ns • Low power consumption - 50mA maximum active current

Contextual Info: im w ie M X28F1 OOOP 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 70ns Vcc:5V±5%; CL:35pF 90/120ns(Vcc:5V±10%; CL:100pF) • Low power consumption - 50mA maximum active current - 10OuA maximum standby current

MX28F1000PC-12

Contextual Info: _ M X28F10OP 1 M-BIT n S8K x 81 CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 90/120/150 ns • Low power consumption - 50mA maximum active current - 100|iA maximum standby current

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

28f100

Contextual Info: IIM C R T R L Y S T Preliminary M U t t i S E M I C O N D U C T O R CAT28F202 2 Megabit CMOS Flash Memory FEATURES Fast Read Access Time: 120/150/200 ns 128K x 16 Word Organization Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)