28F10 Search Results

flash jedec dip 32-pin

Abstract: MSM28F101
Contextual Info: O K I semiconductor MSM2 8 F101 1 M BIT 128K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION T he M S M 28F101 is a high speed 128K x 8-bit Flash erasable and electrically reprogram m able m em ory, ideally suited for system s requiring on-board code updates. Flash erasable m eans an

28F101

Contextual Info: n = 7 ^7#» S G S -T H O M S O N M 28F101 I M f l S lg ( 5 | g lllI M ( 0 ) lì ilH ( 5 g 1 Megabit (128K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Standby Current: 100|oA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

Contextual Info: r= 7 M 28F101B M 28V101B S G S -T H O M S O N CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ADVANCE DATA • FAST ACCESS TIMES - 60ns fo r M 28F101B version - 150ns for M 28V101 B version ■ LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 PROGRAM/ERASE CYCLES

m5M28F102

Abstract: COMMAND40 UNICOM Electric 28F102P
Contextual Info: MITSUBISHI LSIs M5#tô8F102P,FP,J,VP,RV- 10,- 12,- 15 V*vi 048576- BIT 65536- WORD BY 16-BIT CM0S FLASH MEMORY -DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M itsubishi M 5M 28F102P, FP, J, VP, RV are high-speed 1 0 4 8 5 7 6 -b it CMOS Flash Memories. They are suitable for

Contextual Info: MITSUBISHI LSIs M 5M 28F 102A F P , J , V P , R V * - 85,-10 1048576-BIT 65536-WORD BY 16-BIT CMOS FLASH MEMORY DESCRIPTION The MITSUBISHI M 5M 28F102A is high-speed 1048576-bit CMOS Flash Memory. This is suitable for the applications with m icro­ processor or m icro-controller w here on-board reprogram m ing is

Contextual Info: SGS-THOMSON M 28F101A M 28V101A CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY PR O D U C T C O N C E PT MEMORY CHIP ERASE SUPPLY VOLTAGE in READ OPERATION - 5V ± 10% for 28F101A version - 3.3V ± 0.3V for M28V101A version 12V PROGRAMMING VOLTAGE PROGRAM/ERASE CYCLES

Contextual Info: MITSUBISHI MICROCOMPUTERS 3886 Group 4\P so'"®9 S IN G L E -C H IP 8 -B IT C M O S M IC R O C O M P U T E R F LA S H M E M O R Y V E R S IO N DESCRIPTION • Power dissipation The 3886 group is the 8-bit m icrocom puter based on the 740 fa m ­ In high-speed m ode . 40 mW

Contextual Info: 28F102 L icen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 55/70/90/100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

Contextual Info: 28F102 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 45/55/70/90 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase –Active: 30 mA max CMOS/TTL levels –Standby: 1 mA max (TTL levels)

xx40h

Abstract: nb2b
Contextual Info: il Il h Th Lt ST •Iff /S P relim inary E M I C O N D U C T O R CAT28F202 2 Megabit CMOS Flash Memory FEATURES ■ Fast Read Access Time: 120/150/200 ns ■ 128K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

28f1000

Abstract: M-Systems pcmcia pcm210 fdd power connector tffs PCM-211 EMM386 pcmcia ethernet TRUEFFS EPROM M-Systems
Contextual Info: PCM-3110C/3112 PCM-220D1 User Manual P/N: 2006311001 Copyright Notice This document is copyrighted, 1997. All rights are reserved. The original manufacturer reserves the right to make improvements to the products described in this manual at any time without notice.

XcxxX

Abstract: m5m28F101J 28F101 M5M28F101
Contextual Info: 28F101 J,VP, RV-15I MITSUBISHI LSIs , 'P 0 - 1048576-BIT 131072-WORD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M itsubishi M 5 M 28F 10 1 J , VP, R V - 151 are high -spe ed 1 0 4 8 5 7 6 -b it CMOS Flash Memories. They are suitable fo r

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

M28F101

Abstract: PDIP32 PLCC32
Contextual Info: SGS-THOMSON ^ 7 # 28F101 M g ^ ( 5 i[L i( g T M 5 M ( g S CMOS 1 Megabit (128K x 8) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIM E: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE

28F1000

Abstract: 28F1000PC 28f1000p MX28F1000 MXIC MX
Contextual Info: m PKELIIflilOliiARV 28F1000 A MACDOWX. 1M-BIT *l 28K x 8 CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 90/120/150 ns • Low power consumption - 50mA maximum active current

PP5V

Abstract: M5M28F101AFP 708-8034
Contextual Info: K MITSUBISHI LSIs _ ' M 5 M 2 8 F 1 0 1 _ A F P , J , V P , R V - 8 5 , - 1 0 , - 1 2 1048576-BIT 131072-WQRD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION The MITSUBISHI 28F101A is hlgh-speei 1048576-bit CMOS Flash Memories. This is suitable for the api lications with micro­

CP3220

Contextual Info: 28F101 Series 1M 128K x 8-bit Flash Memory • DESCRIPTION The Hitachi 28F101 is a 1-M egabit CM OS Flash M em ory organized as 131,072 x 8-bit. The 28F101 is c a p a b le o f in -s y s te m e le c tric a l c h ip e ra s u re and reprogramming. The 28F101 programs and erases data with a 12 V

28F101

Abstract: 013d01 M28F101
Contextual Info: / = T SCS-THOMSON ^ 7 # ll ra®[l[L[iOT®R!lD i 28F101 1 Mb (128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING • ■ ■ ■ ■ ■ ■ ■ ■ - 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10|iS typical

intel 486 dx 33mhz

Abstract: 85C22V10 INTEL 486 Dx processor 01BFFFFFH SX33 486 DX2 component 486 SX
Contextual Info: TECHNICAL PAPER Interfacing the 28F016XS to the Intel486 Microprocessor Family KEN MCKEE TECHNICAL MARKETING ENGINEER PHILIP BRACE APPLICATIONS ENGINEER December 1995 tP> [F3 ® y ST r [ P K E W Q E W Order Number: 297504-003 I 5'25 INTERFACING THE 28F016XS TO THE Intel486™

M5m27c201j

Abstract: 28F101 w49v002fap W49F002UP-B intel 28F256 gang capacitor am29f020 Fujitsu MBM27C1000 gang capacitor pin details M5M27C101J
Contextual Info: PRODUCT DATA SHEET AD63 479-901 and AD51 (479-810) Package Converters for E(E)PROMs and FLASH etc (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" Miscellaneous AD63 32 32 01 P .6 Clamshell Product Code Pins on skt Pins on Base

28f1000

Abstract: 1 MEGA OHM RESISTOR MX28F1000P
Contextual Info: INDEX 28F1000P 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 70ns Vcc:5V±5%; CL:35pF 90/120ns(Vcc:5V±10%; CL:100pF) • Low power consumption – 50mA maximum active current – 100uA maximum standby current

Contextual Info: 5 28F102 Ï. 1 Mbit 64Kb x16, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 1O^is typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Stand-by Current: 5 ^A typical 10,000 ERASE/PROGRAM CYCLES