28F10 Search Results

28F101

Contextual Info: n = 7 ^7#» S G S -T H O M S O N M 28F101 I M f l S lg ( 5 | g lllI M ( 0 ) lì ilH ( 5 g 1 Megabit (128K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Standby Current: 100|oA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

m5M28F102

Abstract: COMMAND40 UNICOM Electric 28F102P
Contextual Info: MITSUBISHI LSIs M5#tô8F102P,FP,J,VP,RV- 10,- 12,- 15 V*vi 048576- BIT 65536- WORD BY 16-BIT CM0S FLASH MEMORY -DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M itsubishi M 5M 28F102P, FP, J, VP, RV are high-speed 1 0 4 8 5 7 6 -b it CMOS Flash Memories. They are suitable for

Contextual Info: MITSUBISHI MICROCOMPUTERS 3886 Group 4\P so'"®9 S IN G L E -C H IP 8 -B IT C M O S M IC R O C O M P U T E R F LA S H M E M O R Y V E R S IO N DESCRIPTION • Power dissipation The 3886 group is the 8-bit m icrocom puter based on the 740 fa m ­ In high-speed m ode . 40 mW

Contextual Info: 28F102 L icen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 55/70/90/100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

Contextual Info: 28F102 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 45/55/70/90 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase –Active: 30 mA max CMOS/TTL levels –Standby: 1 mA max (TTL levels)

xx40h

Abstract: nb2b
Contextual Info: il Il h Th Lt ST •Iff /S P relim inary E M I C O N D U C T O R CAT28F202 2 Megabit CMOS Flash Memory FEATURES ■ Fast Read Access Time: 120/150/200 ns ■ 128K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

28f1000

Abstract: M-Systems pcmcia pcm210 fdd power connector tffs PCM-211 EMM386 pcmcia ethernet TRUEFFS EPROM M-Systems
Contextual Info: PCM-3110C/3112 PCM-220D1 User Manual P/N: 2006311001 Copyright Notice This document is copyrighted, 1997. All rights are reserved. The original manufacturer reserves the right to make improvements to the products described in this manual at any time without notice.

XcxxX

Abstract: m5m28F101J 28F101 M5M28F101
Contextual Info: 28F101 J,VP, RV-15I MITSUBISHI LSIs , 'P 0 - 1048576-BIT 131072-WORD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M itsubishi M 5 M 28F 10 1 J , VP, R V - 151 are high -spe ed 1 0 4 8 5 7 6 -b it CMOS Flash Memories. They are suitable fo r

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

M28F101

Abstract: PDIP32 PLCC32
Contextual Info: SGS-THOMSON ^ 7 # 28F101 M g ^ ( 5 i[L i( g T M 5 M ( g S CMOS 1 Megabit (128K x 8) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIM E: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE

28F1000

Abstract: 28F1000PC 28f1000p MX28F1000 MXIC MX
Contextual Info: m PKELIIflilOliiARV 28F1000 A MACDOWX. 1M-BIT *l 28K x 8 CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 90/120/150 ns • Low power consumption - 50mA maximum active current

Contextual Info: MITSUBISHI LS Is {FLASH MEMORY MODULE FLASH MEMORY 512KX16 O 8 iM BIT Max. Access Type name Load memory time Outward dimensions Data sheet W X H X D m m ) page 118.11 X 1 7 .7 8 x 8 .7 3 / 1C (ns) MH51216FRN-10 * 100 MH51216FRN-12 ★ 120 MH51216FRN-15 ★

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

28f102

Abstract: xx40h
Contextual Info: Main Menu 28F102 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase –Active: 30 mA max CMOS/TTL levels

Contextual Info: NEW PRODUCT 28F101 Series 128K x Changed from HN29C101B 8-bit CMOS Flash Memory ^ H IT A C H I Preliminary Rev. 4.4 October 14,1991 The Hitachi 28F101 is a 131,072 x 8-bit CMOS Flash Memory that is capable of insystem electrical chip erasure and reprogramming.

28f1000

Abstract: block diagram for automatic room power control 28F1000P-12 28f1000-70 1 MEGA OHM RESISTOR 28F1000P-70 MX28F1000P 28F100
Contextual Info: 28F1000P 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 70ns Vcc:5V±5%; CL:35pF 90/120ns(Vcc:5V±10%; CL:100pF) • Low power consumption – 50mA maximum active current – 100uA maximum standby current

Contextual Info: L icen sed In tel second so u rce C A T 2 8 F 1 0 2 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 90/100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

m5M28F102

Contextual Info: MITSUBISHI LSIs M 5 2 8 M 1 0 2 F F P , J , V P , R V - 1 0 1 2 , - 1 5 , - 1048576-BIT 65536-WORD BY 16-BIT CMOS FLASH MEMORY DESCRIPTION The M its u b is h i PIN CONFIGURATION (TOP VIEW) M 5 M 2 8 F 1 0 2 F P , J , V P , RV are h ig h - s p e e d 1 0 4 8 5 7 6 - b it C M OS Flash M e m orie s. T h e y are s u ita b le fo r

M5M28F101P

Abstract: m5m28f101
Contextual Info: \VTS V B IS H ' L S 's M 5 M 2 8 F 1 0 1 P , F P , J , V P , R V - ,- 1 2 , - 1 5 1 0 1048576-BIT 131072-WQRD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION PIN CONFIGURATION (TOP VIEW) The Mitsubishi 28F101P, FP, J, VP, RV are high-speed 1 0 4 8 5 7 6 -bit CMOS Flash Memories. They are suitable for

Contextual Info: S G S -T H O M S O N D M a iC T G S tM O ! M 2 8 F 1 0 2 1 Megabit 64K x 16, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 1OOpA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10[is

Contextual Info: SGS-THOMSON ¡y 28F1001 1024K 128 x 8 CMOS FLASH MEMORY A D V AN C E DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 us. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.