28F020 FLASH Search Results

28F020

Abstract: intel DOC
Contextual Info: 28F020 SPECIFICATION UPDATE Release Date: June, 1997 Order Number: 297847-001 The 28F020 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this

20f020

Contextual Info: 28F020 Program-Verify Command The 28F020 is programmed on a byte-by-byte basis. Byte programming may occur sequentially or at random. Following each programming operation, the byte just programmed must be verified. The program-verify operation is initiated by writing

28F020

Abstract: 28F010 intel DOC
Contextual Info: 5 VOLT BULK ERASE FLASH MEMORY 28F020 x8 SPECIFICATION UPDATE Release Date: February, 1999 Order Number: 297847-002 The 28F020 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this

28F002-T

Contextual Info: APPLICATION NOTE 2M FLASH MEMORY Yes. You can replace Intel 2M flash very easily with Macronix’s flash. Intel Part Number 28F200-T 28F200-B 28F002-T 28F002-B 28F020 Replace with MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P Configuration, Package

PPH 2222 36

Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010
Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

IN6AG

Abstract: 28F020 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

29F020

Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface

2046K

Abstract: 28F020 SmartDie 29024
Contextual Info: in t e * 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 2 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 /xs Typical Byte Program — 4 Second Chip Program 100K Erase/Program Cycles Typical

P28F020-150

Abstract: 28F020 80C186 E28F020 F28F020 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

Contextual Info: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

intel eprom Intelligent algorithm

Abstract: 28F020 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020
Contextual Info: int ! 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jlls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP High-Performance Read

SSC16E

Abstract: N28F020-200 28F020-150 29024 28F020 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Noise Immunity Features — +10% Vcc Tolerance — Maximum Latch-Up Immunity through EPI Processing ■ Quick-Pulse Programming Algorithm — 10 f i s Typical Byte-Program

Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P r o g r a m m i n g Algorithm — 10 fis Typical Byte-Program

28F020

Abstract: 80C186 80c186 specification update
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 4 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read

Contextual Info: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 \iS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp

B1560

Abstract: B1560 equivalent 28f020 transistor B1560 294005 B1205 b1770 b439 AP-316 AP-325
Contextual Info: 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Y Flash Electrical Chip Erase 2 Second Typical Chip Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte Program 4 Second Chip Program Y 100K Erase Program Cycles Typical Y 12 0V g 5% VPP

transistor a13

Abstract: transistor A16 28F010 28F020 TSOP32 IC191 A1727 A1221
Contextual Info: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming TSOP32 -2.HSP SOCKET BOARD REVERSE PINOUT OF TSOP32.HSP v Date : 1998/11/25 v Board ID : 17h v Socket : IC191-0322-001 (YAMAICHI) v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F010, 28F020

i80C186

Abstract: M28F020 29024
Contextual Info: in tj 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

28F020

Abstract: CAT28F020 Nippon capacitors
Contextual Info: CAT28F015 Cost Effective Solution for the 2 MB Flash CAT28F015 Licensed Intel second source 1.5 Megabit CMOS Flash Memory FEATURES • Stop Timer for Program/Erase ■ Fully Compatible to 2 MB Flash 28F020 – No hardware or software changes ■ On-Chip Address and Data Latches

intel 80c186

Abstract: F28F020-90 N28F020-150 28F020 E28F020-150 N28F020-90 80C186 A80C186 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 4 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read

Contextual Info: ß R lIÜ M M tf In te l 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 2 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 ¡xs Typical Byte Program — 4 Second Chip Program 100K Erase/Program Cycles Typical

Contextual Info: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jLis Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp • Command Register Architecture for

Contextual Info: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% Vpp ■ High-Performance Read

TN28F020-150

Abstract: 28F020 80C186 intel 28F020
Contextual Info: E n n n n n n n 28F020 2048K 256K X 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase  2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µS Typical Byte-Program  4 second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% VPP