28C257 Search Results

1N914

Abstract: CAT28HT256
Contextual Info: CAT28HT256 Preliminary Preliminary CAT28HT256 Extended Temperature: 170˚C 2 256K-Bit CMOS E PROM FEATURES • Fast Read Access Times: 200/250 ns ■ Automatic Page Write Operation: –1 to 64 Bytes in 10ms –Page Load Timer ■ Low Power CMOS Dissipation:

28C257-12

Abstract: 1N914 CAT28C257 MS-011 MS-016 28C257-15
Contextual Info: 28C257 256 kb CMOS Parallel EEPROM Description The 28C257 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

CAT28C257

Abstract: 1N914 CAT28C257HNI-90T 28C257
Contextual Info: Advanced 28C257 256K-Bit CMOS PARALLEL E2PROM FEATURES • Automatic Page Write Operation: ■ Fast Read Access Times: 90/120/150 ns –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: –Active: 25 mA Max. –Standby: 150 µA Max.

Contextual Info: 28C257 256 kb CMOS Parallel EEPROM Description The 28C257 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

CAT28C257

Contextual Info: Advanced 28C257 256K-Bit CMOS PARALLEL E2PROM FEATURES • Automatic Page Write Operation: ■ Fast Read Access Times: 90/120/150 ns –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: –Active: 25 mA Max. –Standby: 150 µA Max.

CAT28C257

Contextual Info: C ATA LY S T Advanced 28C257 256K-Bit CMOS PARALLEL E2PROM FEATURES • Automatic Page Write Operation: -1 to 128 Bytes in 5ms -P a g e Load Tim er ■ Fast Read Access Times: 90/120/150 ns ■ Low Power CMOS Dissipation: -A ctive: 25 mA Max. -S tan d b y: 150 |iA Max.

1N914

Abstract: CAT28HT256
Contextual Info: LV S T P re lim in a ry CAT28HT256 E x te n d e d T e m p e r a t u r e : 1 7 0 ° C 256K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: 200/250 ns ■ Low Power CMOS Dissipation: -Active: 30 mA Max. -Standby: 150 iA Max. ■ Simple Write Operation:

CAT28C257

Contextual Info: Advanced 28C257 256K-Bit CMOS PARALLEL E2PROM FEATURES • Automatic Page Write Operation: -1 to 128 Bytes in 5ms -P a g e Load Tim er ■ Fast Read Access Times: 90/120/150 ns ■ Low Power CMOS Dissipation: -A ctive: 25 mA Max. -S tan d b y: 150 jiA Max.

CAT28C257

Abstract: 1N914 28C256 CAT28C257NI-90T
Contextual Info: H EE GEN FR ALO 28C257 256K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Automatic page write operation: ■ Fast read access times: 120/150 ns –1 to 128 Bytes in 5ms –Page load timer ■ Low power CMOS dissipation: –Active: 25 mA max. –Standby: 150 µA max.

CAT28C257

Abstract: 1N914 28C256 CAT28C257NI-90T
Contextual Info: H EE GEN FR ALO 28C257 256K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Automatic page write operation: ■ Fast read access times: 120/150 ns –1 to 128 Bytes in 5ms –Page load timer ■ Low power CMOS dissipation: –Active: 25 mA max. –Standby: 150 µA max.

CAT28C257

Abstract: 1N914 77777K
Contextual Info: C ATA LY S T Advanced 28C257 256K-Bit CMOS PARALLEL E2PROM FEATURES • Automatic Page Write Operation: -1 to 128 Bytes in 5ms -P a g e Load Tim er ■ Fast Read Access Times: 90/120/150 ns ■ Low Power CMOS Dissipation: -A ctive: 25 mA Max. -S tan d b y: 150 jiA Max.

CAT28C257

Abstract: f17a 1N914 CAT28C257NI-90T
Contextual Info: 28C257 256K-Bit CMOS PARALLEL EEPROM FEATURES • Automatic page write operation: ■ Fast read access times: 90/120/150 ns –1 to 128 Bytes in 5ms –Page load timer ■ Low power CMOS dissipation: –Active: 25 mA max. –Standby: 150 µA max. ■ End of write detection:

Contextual Info: Preliminary CAT28HT256 E x te n d e d T e m p e r a tu r e : 1 7 0 ° C 256K-Bit CMOS E2PR0M FEATURES • Fast Read Access Times: 200/250 ns ■ Automatic Page Write Operation: -1 to 64 Bytes in 10ms -P a g e Load Tim er ■ Low Power CMOS Dissipation: -A ctive: 30 mA Max.

Contextual Info: 28C257 256K-Bit CMOS PARALLEL EEPROM FEATURES • Automatic page write operation: ■ Fast read access times: 120/150 ns –1 to 128 Bytes in 5ms –Page load timer ■ Low power CMOS dissipation: –Active: 25 mA max. –Standby: 150 µA max. ■ End of write detection: