28C04A15 Search Results

Contextual Info: b3E D blG3BDl D D 0 7 5 n T7Ö I IHCHP niCROCHIP TECHNOLOGY INC & 28C04A Microchip 4K 512 X8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation —30mA Active — 100|jA Standby

Contextual Info: & 28C04A Microchip 4K 512 x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|xA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years

Contextual Info: 28C04A 4K 512 x 8 CMOS EEPROM 32 Vcc 31 WE 29 A8 6 28 NC 7 27 NC 8 9 10 11 26 NC 25 OE 24 NC 23 CE 20 19 18 17 21 I/O6 15 22 I/O7 13 14 12 • Pin 1 indicator on PLCC on top of package BLOCK DIAGRAM I/O0 DESCRIPTION The Microchip Technology Inc. 28C04A is a CMOS 4K

Contextual Info: 28C04A M ic r o c h ip 4K 512 X 8 CMOS EEPROM PACKAGETYPES FEATURES • Fast Read Access Time— 150 ns DIP • CMOS Technology for Low Power Dissipation - 30 mA Active A7C • 1 24 3 Vcc A6C 2 A5 C 3 23 □ A8 22 3 N C A4 C 4 - 100 nA Standby IO 00 o

tce 1994

Abstract: 28C04A 28C04A-15 28C04A-20 28C04A-25
Contextual Info: 28C04A M ic r o c h ip : 4K 512 x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >10 years • Endurance - Minimum 104 Erase/Write Cycles

Contextual Info: Obsolete Device 28C04A 4K 512 x 8 CMOS EEPROM 32 Vcc 31 WE 29 A8 6 28 NC 7 27 NC 8 9 10 11 26 NC 25 OE 24 NC 23 CE 20 19 18 17 21 I/O6 15 22 I/O7 13 14 12 • Pin 1 indicator on PLCC on top of package BLOCK DIAGRAM I/O0 DESCRIPTION The Microchip Technology Inc. 28C04A is a CMOS 4K

Contextual Info: M ic r o c h ip 28C04A 4K 512 x 8 CMOS EEPROM FEATURES PACKAGETYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation DIP - 30 mA Active - 100 nA Standby A7C • 1 A6Ü 2 A5C 3 A4 E 4 5 6 A 3: A2C • Fast Byte Write Time— 200 fis or 1 ms

AT28C04-20

Abstract: AT28C04-25 XL2804A-450 2804A-250 BR2804A-300 RJP63f3 2804A-300 28C04A-20 28C04A-25 AT28C04-15
Contextual Info: - 26 - 2 8 0 4 X A ftK K B S m % it £ CC TAAC max ns) •■/ * M > TCAC TOH max nax (ns) (ns) TOE inax (ns) TOD nax (ns) VDD (V) A M I DD/STANDBY (mA) V II max (V) fcH * / » 1) V IH min (V) Ci max (PF) V O L/1 VOL max (V/mA) « 9L VOH/ I VOH rain (V/mA)

Contextual Info: M 28C04A ic r o c h ip 4K 512 x 8 CMOS EEPROM FEATURES DESCRIPTION • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 pA Standby • Fast Byte Write Time—200 jis or 1 ms • Data Retention >10 years

Contextual Info: & 28C04A Microchip 4K 512 x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum The Microchip Technology Inc 28C04A is a CMOS 4K • CMOS Technology for Low Power Dissipation non-volatile electrically Erasable and Programmable

Contextual Info: 28C04A 4K 512 x 8 CMOS EEPROM DIP A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 24 23 22 21 20 19 18 17 16 15 14 13 •1 2 3 4 5 6 7 8 9 10 11 12 30 NC 32 Vcc 31 WE 5 29 A8 6 28 NC 7 27 NC 26 NC 8 28C04A 9 25 OE 20 21 I/O6 19 22 I/O7 13 18 23 CE 12 17 24 NC

Contextual Info: M 28C04A ic r o c h ip 4K 512 x 8 CMOS EEPROM FEATURES DESCRIPTION • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 (iA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >10 years

Contextual Info: 28C04A 4K 512 x 8 CMOS EEPROM PACKAGE TYPES 32 Vcc 31 WE Vcc A8 NC WE OE NC CE I/O7 I/O6 I/O5 I/O4 I/O3 5 29 A8 6 28 NC 7 27 NC 28C04A 8 9 10 11 26 NC 25 OE 24 NC 23 CE 20 19 18 21 I/O6 17 22 I/O7 13 15 12 14 A6 A5 A4 A3 A2 A1 A0 NC I/O0 2 NC 1 NU PLCC 24

Contextual Info: 28C04A M icro chip 4K 512 x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C04A is a CMOS 4K non-volatile electrically Erasable and Programmable Read Only Memory (EEPROM). The 28C04A is accessed like a static RAM for the read or write cycles without the need of external components. During a

Contextual Info: $ 28C04A M ic r o c h ip 4K 512 x 8 CMOS EEPROM FEATURES PACKAGETYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation DIP - 30 mA Active - 100 |xA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >10 years

Contextual Info: 28C04A 4K 512 x 8 CMOS EEPROM 2 NC 1 NU 29 A8 6 28 NC 7 27 NC 8 9 10 11 26 NC 25 OE 24 NC 23 CE 20 19 18 17 21 I/O6 15 22 I/O7 13 14 12 • Pin 1 indicator on PLCC on top of package BLOCK DIAGRAM I/O0 DESCRIPTION The Microchip Technology Inc. 28C04A is a CMOS 4K

28C04A

Abstract: 28C04A-15 28C04A-20 28C04A-25
Contextual Info: 28C04A 4K 512 x 8 CMOS EEPROM 32 Vcc 31 WE 29 A8 6 28 NC 7 27 NC 8 9 10 11 26 NC 25 OE 24 NC 23 CE 20 19 18 17 21 I/O6 15 22 I/O7 13 14 12 • Pin 1 indicator on PLCC on top of package BLOCK DIAGRAM I/O0 DESCRIPTION The Microchip Technology Inc. 28C04A is a CMOS 4K