28APR2008 Search Results

Contextual Info: STK38N3LLH5 N-channel 30 V, 1.3 mΩ, 38 A, PolarPAK STripFET V Power MOSFET Features Type VDSS STK38N3LLH5 30 V RDS on max RDS(on)*Qg 1.55 mΩ 70.9 nC*mΩ • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on)

OPA300

Abstract: OPA350 OPA357 TL712 TLC3016 TLV3501 TLV3502 TLV3501DBV
Contextual Info: TLV3501 TLV3502 SBOS321D − MARCH 2005 − REVISED JULY 2005 4.5ns Rail-to-Rail, High-Speed Comparator in Microsize Packages FEATURES D D D D D D D DESCRIPTION HIGH SPEED: 4.5ns RAIL-TO-RAIL I/O SUPPLY VOLTAGE: +2.7V to +5.5V PUSH-PULL CMOS OUTPUT STAGE SHUTDOWN TLV3501 only

LM136

Abstract: LT1009 LT1009C LT1009CD LT1009CDR LT1009CLP LT1009CLPM LT1009I LM136-2.5
Contextual Info: LT1009 www.ti.com. SLVS013M – MAY 1987 – REVISED APRIL 2008 2.5-V INTEGRATED REFERENCE CIRCUIT

STK28N3LLH5

Contextual Info: STK28N3LLH5 N-channel 30 V, 0.0029 Ω, 28 A, PolarPAK STripFET V Power MOSFET Preliminary Data Features Type VDSS RDS on RDS(on)*Qg STK28N3LLH5 30 V <0.0035 Ω 54 nC*mΩ • Ultra low top and bottom junction to case thermal resistance ■ RDS(on) * Qg industry bechmark

TLC3016

Abstract: TLV3501DBV SOT23-6 MARKING NXA TLV3501AIDBVR OPA300 OPA350 OPA357 TL712 TLV3501 TLV3502
Contextual Info: TLV3501 TLV3502 SBOS321D − MARCH 2005 − REVISED JULY 2005 4.5ns Rail-to-Rail, High-Speed Comparator in Microsize Packages FEATURES D D D D D D D DESCRIPTION HIGH SPEED: 4.5ns RAIL-TO-RAIL I/O SUPPLY VOLTAGE: +2.7V to +5.5V PUSH-PULL CMOS OUTPUT STAGE SHUTDOWN TLV3501 only

EMIF02-USB03F2

Abstract: AN1235 AN1751 applications of emi filters
Contextual Info: EMIF02-USB03F2 2-line IPAD , EMI filter including ESD protection Features • 2-line, low-pass filter + 2-line ESD protection ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: < 2.80 mm2 ■ Very thin package: 0.65 mm

Contextual Info: EMIF06-HMC01F2 6-line IPAD , EMI filter including ESD protection Features • 6-line low-pass-filter ■ High efficiency in EMI filtering ■ Very low PCB space occupation: < 4.4 mm2 ■ Lead-free package ■ Very thin package: 0.65 mm ■ High efficiency in ESD suppression

Contextual Info: EMIF02-USB03F2 2-line IPAD , EMI filter including ESD protection Features • 2-line, low-pass filter + 2-line ESD protection ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: < 2.80 mm2 ■ Very thin package: 0.65 mm

AN1235

Abstract: AN1751 EMIF03-SIM01F2 JESD97 marking MG UM-47
Contextual Info: EMIF03-SIM01F2 3-line IPAD , EMI filter including ESD protection Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.42 mm x 1.42 mm ■ Very thin package: 0.65 mm

marking HB

Abstract: AN1751 AN2348 EMIF02-MIC02F3 JESD97 Part Marking STMicroelectronics
Contextual Info: EMIF02-MIC02F3 2-line IPAD , EMI filter including ESD protection Features • EMI symmetrical I/O low-pass filter ■ High efficiency EMI filtering ■ Lead-free package ■ Very low PCB space consumption: 0.9 mm2 ■ Very thin package: 0.60 mm ■ High efficiency ESD suppression

st microelectronics datecode

Abstract: AN1235 AN1751 EMIF02-USB03F2 JESD97 ST MICROELECTRONICS MARKING ST MICROELECTRONICS DATE CODE MARKING
Contextual Info: EMIF02-USB03F2 2-line IPAD , EMI filter including ESD protection Features • 2-line low-pass-filter + 2-line ESD protection ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: < 3.25 mm2 ■ Very thin package: 0.65 mm

STK38N3LLH5

Contextual Info: STK38N3LLH5 N-channel 30 V, 1.3 mΩ, 38 A, PolarPAK STripFET V Power MOSFET Features Type VDSS STK38N3LLH5 30 V RDS on max RDS(on)*Qg 1.55 mΩ 70.9 nC*mΩ • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on)

Contextual Info: TLC226xĆQ1, TLC226xAĆQ1 Advanced LinCMOS RAILĆTOĆRAIL OPERATIONAL AMPLIFIERS ą SGLS189B − OCTOBER 2003 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per D D D D MIL-STD-883, Method 3015; Exceeds 200 V

Contextual Info: SN65LVDS179ĆQ1, SN65LVDS180ĆQ1, SN65LVDS050ĆQ1, SN65LVDS051ĆQ1 HIGHĆSPEED DIFFERENTIAL LINE DRIVERS AND RECEIVERS SGLS204A − SEPTEMBER 2003 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per D D D D D

Contextual Info: TLC3704ĆQ1 QUAD MICROPOWER LinCMOS VOLTAGE COMPARATORS SGLS191A − JUNE 2004 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per D D D D D D PACKAGE TOP VIEW MIL-STD-883, Method 3015; Exceeds 50 V Using Machine Model (C = 200 pF, R = 0)

"pocket Scale"

Contextual Info: EMIF04-MMC02F2 4-line IPAD , EMI filter including ESD protection Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.57 mm x 2.07 mm ■ Very thin package: 0.65 mm

Contextual Info: EMIF04-MMC02F2 4-line IPAD , EMI filter including ESD protection Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.57 mm x 2.07 mm ■ Very thin package: 0.65 mm

LM285

Abstract: LM385 LT1004 LT1004-2 LT1004C LT1004CD-1-2 LT1004CDR-1-2 TL1004
Contextual Info: LT1004Ć1.2, LT1004Ć2.5 MICROPOWER INTEGRATED VOLTAGE REFERENCES SLVS022M − JANUARY 1989 − REVISED MAY 2008 D Initial Accuracy D D D D − ±4 mV for LT1004-1.2 − ±20 mV for LT1004-2.5 Micropower Operation Operates up to 20 mA Very Low Reference Impedance

TLE2071

Abstract: TLE2071ACD TLE2071AID TLE2071AMFK TLE2071AMJG TLE2071CD TLE2071ID TLE2071MFK TLE2426
Contextual Info: TLE207x, TLE207xA EXCALIBUR LOWĆNOISE HIGHĆSPEED JFETĆINPUT OPERATIONAL AMPLIFIERS ąą SLOS181B − FEBRUARY 1997 − REVISED APRIL 2004 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and

AN2348

Abstract: emif07 lcd02f3 EMIF07-LCD02F3 Marking STMicroelectronics year digit Z AN1751
Contextual Info: EMIF07-LCD02F3 7-line IPAD , EMI filter and ESD protection for LCD and cameras Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.94 mm x 1.54 mm Flip Chip (18 bumps)

ARM LPC2148 application notes

Abstract: Philips LPC2148 reference manual LPC2xxx SPI master code example LPC2148 interfacing circuit with adc LPC2148 interfacing circuit with adc using pwm AN10513 application notes lpc2148 LPC2148 DC motor program ARM7 LPC2129 UART trigger interrupt lpc2148
Contextual Info: LPC2109/2119/2129 Single-chip 16/32-bit microcontrollers; 64/128/256 kB ISP/IAP flash with 10-bit ADC and CAN Rev. 06 — 10 December 2007 Product data sheet 1. General description The LPC2109/2119/2129 are based on a 16/32-bit ARM7TDMI-S CPU with real-time

Contextual Info: EMIF09-SD01F3 9-line IPAD , EMI filter and ESD protection Features • 9-line EMI low-pass filter and ESD protection ■ High efficiency in EMI filtering ■ Lead-free package ■ 400 µm pitch ■ Very low PCB space occupation: < 4 mm2 ■ Very thin package: 0.6 mm

Contextual Info: EMIF06-VID01F2 6-line IPAD , low capacitance EMI filter and ESD protection Features • High efficiency EMI filtering -40 dB @ 900 MHz ■ Low line capacitance suitable for high speed data bus ■ Low serial resistance for camera impedance adaptation ■

Contextual Info: EMIF10-LCD02F3 10-line IPAD , EMI filter and ESD protection for LCD and cameras Features • Lead-free package ■ EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ 400 µm pitch ■ Compatible with high speed data rate Lead-free Flip-Chip package