28FEB05 Search Results

Tyco 567

Abstract: LR7189
Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. — »— LOC ALL RIGHTS RESERVED. REVISIONS DIST G 14 LTR DESCRIPTION OWN DATE REV PER 0 G 3 A —0 0 3 5 —0 5 APVD JR MJS 28FEB05 D D U WIRE RANGE

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD DIST REVISIONS 00 LTR AD DESCRIPTION DWN DATE EC 0G3C 0838 04 APVD BSV JLG 28FEB05 POINT OF MEASUREMENT FOR PLATING THICKNESS

PM582

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC GP RESERVED. REV I S I O N S D I ST 00 LTR DE S C R I P T I O N DATE D WN APVD SEE SHEET c C T H I S DRAWING I S a C ONT R OL L ED DOCUMENT FOR T l C O E L E C T R O N I C S C O RP ORA TI ON

AT90SC

Abstract: AT90SC9618RCT
Contextual Info: Features General • High-performance, Low-power secureAVR Enhanced RISC Architecture • • • • • • – 135 Powerful Instructions Most Executed in a Single Clock Cycle Low Power Idle and Power-down Modes Bond Pad Locations Conforming to ISO 7816-2

a96 laser diode

Abstract: a96 laser a96 "laser diode"
Contextual Info: Si8419DB New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES ID (A)a rDS(on) (W) 0.035 @ VGS = −4.5 V −11.7 0.042 @ VGS = −2.5 V −10.7 0.052 @ VGS = −1.8 V −9.6 0.069 @ VGS = −1.5 V −8.3 Qg (Typ)

SC-75

Abstract: SC-75A SC-89 Si1012R-T1 Si1012X-T1
Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated

64184

Contextual Info: MKT 304 Vishay BCcomponents Metallized Polyester Film Capacitors MKT Radial Epoxy Partly Lacquered Type APPLICATIONS Blocking, coupling and decoupling. Bypass and energy reservoir w max l max 168x12 halfpage (h'max ) MARKING C-value; rated voltage; tolerance

LT 220

Contextual Info: MKP 479 Vishay BCcomponents AC and Pulse Polypropylene Film Capacitors MKP Radial Epoxy Lacquered Type APPLICATIONS Low losses due to low contact resistance and low loss dielectric result in applications where high currents at high frequency occur or high stability is preferred. Typical for

Contextual Info: MKT 373 Vishay BCcomponents Metallized Polyester Film Capacitors MKT Radial Potted Type APPLICATIONS 168x12 halfpage Blocking and coupling. Bypass and energy reservoir w l MARKING C-value; tolerance; rated voltage; code for manufacturer; manufacturer’s type designation; code for dielectric material;

1.5 MKT 400V

Abstract: 28106
Contextual Info: MKT 468 MKT/MKT 468 Vishay BCcomponents Metallized Polyester Film Capacitors MKT Radial Epoxy Lacquered Type APPLICATIONS Blocking and coupling. Bypass and energy reservoir 168x12 halfpage l MARKING C-value; tolerance; rated voltage; code for manufacturer;

TSOP34838YA1

Abstract: TSOP34836YA1 82257 TSAL6200 TSOP348
Contextual Info: TSOP348.YA1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP348.YA1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

TSAL6200

Abstract: TSOP348
Contextual Info: TSOP348.XG1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP348.XG1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

Si1419DH

Contextual Info: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance

TSOP34836RF1

Abstract: TSAL6200 TSOP348 TSOP34830RF1 TSOP34833RF1 TSOP34837RF1
Contextual Info: TSOP348.RF1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP348.RF1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

TSOP34836RF1

Contextual Info: TSOP348.RF1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP348.RF1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

Contextual Info: TSOP341.UH1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP341.UH1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

Contextual Info: TSOP348.YA1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP348.YA1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

Contextual Info: TSOP348.SX1 VISHAY Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP348.SX1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

TSOP34836SB1

Contextual Info: TSOP348.SB1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP348.SB1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

Si1905DL

Abstract: si1095
Contextual Info: SPICE Device Model Si1095DL Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

71055

Abstract: MAX 71055 D 71055 Si5441DC Si5441DC-T1
Contextual Info: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free

Contextual Info: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch

capacitor mkt 100nf 400v

Abstract: 05564 capacitor 100nf 100v polyester 10nF MKT Polyester capacitor capacitor 100nf 250v polyester vishay MKT 250V capacitor 1.5 MKT 400V 1/10 capacitor polyester mkt 400v vishay mkt capacitor ac mkt 100nf 400v
Contextual Info: MKT 467 Vishay BCcomponents Metallized Polyester Film Capacitors MKT Radial Epoxy Lacquered Type APPLICATIONS 168x12 halfpage Blocking and coupling. Bypass and energy reservoir w l MARKING C-value; tolerance; rated voltage; code for manufacturer; manufacturer’s type designation; manufacturer’s symbol

Si1431DH

Abstract: 72707
Contextual Info: SPICE Device Model Si1431DH Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range