28F800S Search Results

A12E

Abstract: LH2B 48-PIN FBGA048-P-0808 LH28F800SGH-L LH28F800SG-L TSOP048-P-1220
Contextual Info: SHARP 28F800SG-L/SGH-L FOR TSOP, CSP 28F800SG-L/SGH-L (FOR TSOP, CSP) Flash Memories DESCRIPTION • Enhanced automated suspend options The LH 28F800S G -L/SG H -L flash m em ories with SmartVoltage technology are high-density, low-cost, - Word write suspend to read

IN1001

Contextual Info: SHARP PRELIMINARY 1997 FLASH MEMORY LH 28F800SG X X V e r . 0 .3 SHARP CORPORATION NOTICE • This publication is the proprietary product of Sharp and is copyrighted, with all rights reserved. Under the copy­ right laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or

44-PIN

Abstract: LH28F800SGH-L LH28F800SG-L
Contextual Info: SHARP I U O Q C O n n e r I L h z o r o u u o b - L 28F800SG-L FOR SOP 8 M -b it(5 1 2 k B x 1 6 )S m a rtV o lta g e Flash Memory (FOR SOP) DESCRIPTION The 28F800SG-L flash memory with Smart Voltage technology is a high-density, lowcost, nonvolatile, read/write storage solution for a

LH28F800SGN

Contextual Info: SHARP 28F800SG 8-MBIT 512 KB x 16 SmartVoltage FLASH MEMORY FEATURES • S m artV oltage T e c h n o lo g y - 3.0V o r 5V Vcc - 3.0V, 5V o r 12V Vpp • S R A M -C om patible W rite In te rfa c e • H ig h -D e n sity S y m m e tric a lly B lo c k e d

Contextual Info: SHARP J a n .1998 FLASH MEMORYÌ LH28F016SANS-70 Ver.1.1 V_ J SHARP CORPORATION Flash Memory Engineering Department 2 Memory Engineering Center Tenri Integrated C irc u its Development 1C Group SHARP L HF 1 6 S Z B 1 LH28F016SANS-70 16 Mbit (1 Mbit x 16, 2 Mbit x 8)

48-PIN

Abstract: LH28F800SG 17A17 48 tsop flash pinout NC472
Contextual Info: PRODUCT INFORMATION 28F800SG 8M 512K x 16 SmartVoltage Flash Memory FEATURES • SmartVoltage technology – 3.0 V or 5 V VCC – 3.0 V, 5 V or 12 V VPP • High-performance – 70 ns (5 V VCC) read access time – 100 ns (2.7 V VCC) read access time

circuit diagram of car central lock system

Abstract: STV 5v sense DG board Car Central lock system e purse ccs 100 car central lock car central lock vw OA74 LH28F800SG
Contextual Info: PRELIMINARY SHARP LH28F8Q0SG 8-MBIT 512 KB x 16 SmartVoltage FLASH MEMORY FEATURES SmartVoltage Technology • 3.0V or SV Vce - 3.0V, 5V or 12V Vw SRAM-Compatible Write Interface High-Density Symmetrically Blocked Architecture - Sixteen 32k-word Erasable Blocks

LH28F800SUT-70

Abstract: LH28F008SA LH28F016SA LH28F016SU IU011
Contextual Info: n M n r SPEC No. ISSUE: May 15 1996 T o ; S P E C I F I CAT Product Type_8 M F l a s h IONS F i l e M e m o r y _ L H 2 8 F 8 0 0 S U T —7 0 Model No. L H F 8 0 S 0 5 j&This specifications contains 44 pages including the cover and appendix.

56-PIN

Abstract: LH28F008SA LH28F800SU TSOP056-P-1420 LH28F800SUT
Contextual Info: 28F800SU FEATURES • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V VCC • 5 V Write/Erase Operations 5 V VPP – No Requirement for DC/DC Converter to Write/Erase • 70 ns Maximum Access Time • Minimum 2.7 V Read capability

Contextual Info: P roduct I nformation APPU CATIONS; LH28F8009GHB 8M 512K x 16 9nartU)ltage Rash Memory apliance DESCRIPTION SHARPS LH28R8009GHB is a 8M flash m anory with 9nartV)ltage technology and features a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of

a14q

Contextual Info: TMS28F008SET, TMS28F008SEB, 28F800SET. 28F800SEB TMS28F008SZT, TMS28F008SZB, 28F800SZT, 28F800SZB 1048576 BY 8-BJT/524288 BY 16-BIT BOOT-BLOCK FLASH MEMORIES • • • • • • • • Organization. . . 1048576 By 8 Bits 524288 By 16 Bits

TSOP 56 LAYOUT

Abstract: tsop56 MARKing intel LH28F008SA LH28F016SA LH28F016SU 6P14 TSOP56 package tray LH28F800SU
Contextual Info: SHARP I SPEC No. ISSUE: May 15 1996 T o S P E C I F I C A T I O N S Product Type_8 M F l a s h F i l e M e m o r y _ LH28F800 SUT- 1 0 Model N o . _ L H F 8 0 S 0 7 _ ¿&This s p e c if ic a t io n s co n ta in s 44 pages in c lu d in g th e cover and appendix.

LH28F800SGHB

Contextual Info: PRODUCT INFORMATION 28F800SGHB 8M 512K x 16 SmartVoltage Flash Memory FEATURES • SmartVoltage technology – 3.0 V (2.7 V MIN.) or 5 V VCC – 3.0 V (2.7 V MIN.), 5 V or 12 V VPP • High performance – 100 ns (5 V VCC) read access time – 120 ns (2.7 V VCC) read access time

a13c

Abstract: F0006
Contextual Info: 8M 512K x 1 6 ,1M x 8 Flash Memory FEATURES 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V Vcc • 5 V Write/Erase Operations (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase • 70 ns Maximum Access Time

LH28F

Abstract: bt12 bl70
Contextual Info: FLASH MEMORY j _ ☆ New product • FLASH MEMORIES ★ Underdevelopment ♦ Features • Smart voltage technology provides the most flexible voltage solution (from 3.3 V single to 5 V single, and to the dual voltage-3.3 V/5 V, 3.3 V/12 V, 5 V/12 V for wider application from battery operated PDAs to industrial

Contextual Info: MEMORIES \ Flash Memories • Symmetrical Block Sm artVoltage Flash Memories S up p ly vo lta g e C a p a c ity Bit configuration sE efbyte“ i ^words / O p erating tem p. M odel No. Vcc A c c e ss tim e V fC ) R e m a rks (ns) 70 85 90 100 120 150170

28F800

Abstract: BSR15 LH28F008SA LH28F016SA LH28F016SU LH28F800SU
Contextual Info: 8M 512K x 1 6 ,1M x 8 Flash Memory FEATURES 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V Vcc • 5 V Write/Erase Operations (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase • 70 ns Maximum Access Time

diagram circuits power supply APS 283

Abstract: TSOP 56 LAYOUT TSOP56 08001H tsop56 MARKing intel TSOP56 package tray
Contextual Info: LHF80S06 ; 1 28F800SU R-70 8 Mbit 512 Kbit x 16,1 Mbit x 8 5V Single Voltage Flash Memory CONTENTS PAGE FEATURES. CONTENTS PAGE 4.0 BUS OPERATIONS, COMMANDS 1.0 INTRODUCTION. 3 AND STATUS REGISTER DEFINITIONS. 10

Contextual Info: 1 6 OSGED-L1 0 7 / 1 5 / 9 8 8 : 0 8 PM Page 1 SHARP LH28F160SGED-L10 LH28F160SGED-L10 16 M-bit 512 kB x 16 x 2-Bank SmartVoltage Dual Work Flash Memory DESCRIPTION • Enhanced automated suspend options The LH28F160SGED-L10 Dual W ork flash memory with Sm artVoltage technology is a high-density,

IR2E01

Abstract: LR4087 LZ8420M LZ9GG13 LI3160 IR2C36 LZ2423A SM8205 LZ9GG13M LR39901
Contextual Info: Index Model No. A R M 7 D C PU C o re B i-C M O S 1 28 4 0 ,4 2 C 62 IR 3 Y 1 2 A 50 LH1532 49 LH 531V 00 2.4 IR 2 E 2 8 62 IR 3 Y 1 4 50 LH1536 49 LH 532000B 3,4 IR 2 E 2 9 62 IR 3 Y 1 5 50 LH 1540A 49 L H 5 3 2 00 0 B -1 3,4 IR 2 E 3 0 62 IR 3 Y 1 6 50