28F410 Search Results

M28F410

Contextual Info: M 28F410 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Flash Memory • 5V ± 10% SUPPLY VOLTAGE ■ 1 2 V ± 5 % o r ± 1 0 % PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

M28F410

Contextual Info: w- SCS-THOMSON k7 # . M 28F410 IM [M D iH I è n n M P M ]D (§ Ii 4 Mb (x8/x16, Block Erase FLASH M EM O RY 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE

Contextual Info: £jJ SGS-THOMSON 0 iMDIŒ ra(M0©S 28F410 4 Mb (x8/x16, Block Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12 V ± 5 % o r± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

Contextual Info: 5 F . 28F410 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Flash Memory • 5 V ± 10% SUPPLY VOLTAGE ■ 12V ± 5% or ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS T IM E :60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE

tower pro sg 90

Contextual Info: SGS-THOMSON Æ 28F410 M28F420 ÍL [ fï C M O S 4 Megabit x8 or x16, 7 Blocks FLASH M E M O R Y ADVANCE DATA DUAL x8 andx16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and

Contextual Info: 28F410 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Flash Memory • 5V ± 10% SUPPLY VOLTAGE ■ 1 2 V ± 5 % o r ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

Am28F200

Contextual Info: Discontinued Product—Support Information Only This literature was published years prior to the establishment of Agilent Technologies as a company independent from Hewlett-Packard and describes products or services now available through Agilent. It may also refer to products/services no longer supported by Agilent.

Contextual Info: 5 7 . 28F410 M28F420 S G S -T H O M S O N 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S 0 4 4 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and

Z3A11

Abstract: A10113 M28F410 M28F420 TSOP56
Contextual Info: 28F410 M28F420 SGS‘THOMSON G ì . H O » iL I § T [ M ! [ l( S Ì 4 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

Contextual Info: mA. M X 2 8 F 4 1 OO MACRON1X. INC. 4M-BIT 5 1 2K x 8] CMOS FLASH MEMORY FEATURES • 524,288x8/262,144x16 sw itchable • Fast access tim e: 120/150/200ns • Low pow er consum ption - 50m A m axim um active current - 100nA m axim um standby current • P rogram m ing and erasing voltage 12V ± 5%