28C17 Search Results

Contextual Info: b3E I> • bl032Gl QGG7S33 E46 IP1CHP MICROCHIP TECHNOLOGY INC 28C17A Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES need of external components. During a “byte write”, the address and data are latched internally, freeing the microprocessor address and data bus for other opera­

Contextual Info: M 28C16B M 28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 90 ns at Vcc=5V ■ Single Supply Voltage: - 4.5 V to 5.5 V for M28CxxB - 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)

Contextual Info: $ M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Pow er Dissipation - 30 m A Active - 100 (iA Standby • Fast Byte Write Time— 200 us or ms • Data Retention >10 years

Contextual Info: 28C17A M icro c h ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|xA Standby • Fast Byte Write Time— 200n.s or 1ms • Data Retention >10 years

Contextual Info: M $ 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 ¡is or 1 ms • Data Retention >200 years • High Endurance- Minimum 104 Erase/Write Cycles

200B

Abstract: 28C17A
Contextual Info: ^ÊÊÊÊÈ.^- & M i c r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years

M28C16

Abstract: M28C17 PDIP28 S028
Contextual Info: S G S -T H O M S O N iyitEïïïïÂQDtES M 28C17 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLYVOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation

200B

Abstract: 28C17A DK-2750 RG41
Contextual Info: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7

Contextual Info: M i c r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles

c17f

Contextual Info: 3890002 QENL 83 D 0 3 3 9 6 ÏNSTR/ M I C R O C H I P MI CROCHIP TECHNOLOGY INC GENERAL INSTRUMENT A3 D 28C16/28C17 blGBSDl 0 0 0 3 3 ^ ÜTf 7 PBELDH01N1ÂRV DIM FO M ATDO IN] 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES • Fast Read Access Time — 150 ns

Contextual Info: M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read A ccess Time— 150 ns • CMOS Technology fo r Low P ow er Dissipation - 30 m A Active - 100 (iA S tandby • Fast Byte W rite Time— 200 |xs o r 1 ms • Data Retention >10 years

Contextual Info: M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 (iA Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles

Contextual Info: 28C17A M ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 jiA Standby • Fast Byte Write Time— 200 ps or 1 ms • Data Retention >200 years

Contextual Info: 28C17A M icro ch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|oA Standby • Fast Byte Write Time— 200ns or 1 ms • Data Retention >10 years

tce 1994

Contextual Info: 28C17A 16K 2K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 29 A8 28 A9 27 NC 26 NC PLCC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 21 I/O6 17 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3 16 DIP/ SOIC

28C17A

Contextual Info: Obsolete Device 28C17A 16K 2K x 8 CMOS EEPROM  2004 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10

Contextual Info: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7

Contextual Info: 28C17A 16K 2K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3 14 28 27

Contextual Info: 28C17A DICE FORM Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • 250ns Access Time • CMOS Technology for Low Power Dissipation — 30mA Active — 100|iA Standby • Fast Byte Write Time— 1ms • Automatic Write Operation

10F-1C

Contextual Info: JÊ Ë Ê È L * & 28C17A M ig z r o n c h ip i 16K 2K X 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |^A Standby • Fast Byte W rite Time— 200 |^s or 1 ms • Data Retention >200 years

28C17A

Contextual Info: M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles

Contextual Info: 28C17A M ic r o c h ip 16K 2K X 8 CMOS Electrically Erasable PROM need of external components. During a “byte write”, the address and data are latched internally, freeing the microprocessor address and data bus for other opera­ tions. Following the initiation of write cycle, the device

Contextual Info: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7

Contextual Info: $ 28C17A M ic r o c h ip 16K 2K x 8 CMOS EEPROM • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 nA Standby • Fast Byte Write Time— 200 |is or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles