2878 TRANSISTOR Search Results

Contextual Info: T O SH IB A 2SC2878 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC 2878 FOR MUTING AND SWITCHING APPLICATIONS • • • High Emitter-Base Voltage : Vj5BO~25V Min. High Reverse hpg : Reverse hjrg = 150 (Typ.) (VCE= - 2 V , I ç ——4mA) Low On Resistance

Contextual Info: 19-2878; Rev 0; 7/03 2:1 Multiplexers and 1:2 Demultiplexers with Loopback Ultra low 91psP-P max pseudorandom bit sequence (PRBS) jitter ensures reliable communications in highspeed links that are highly sensitive to timing error, especially those incorporating clock-and-data recovery,

MAX9394

Abstract: MAX9394EHJ MAX9395 MAX9395EHJ
Contextual Info: 19-2878; Rev 1; 5/07 2:1 Multiplexers and 1:2 Demultiplexers with Loopback The MAX9394/MAX9395 consist of a 2:1 multiplexer and a 1:2 demultiplexer with loopback. The multiplexer section channel B accepts two low-voltage differential signaling (LVDS) inputs and generates a single LVDS

TO111 package

Abstract: 2N278 2N2879 2N2880 2N2877 TWX910-950-1942 2N2878
Contextual Info: 3918590 GENERAL 95D SEM ICON DUCTOR General Sf* Sem iconductor ^ « Industries, Inc. 02100 2N 2877 2N 2878 2N 2879 2N 2880 T -3*- SQ U H R E TÌ COMPANY DIFFUSED SILICON EPITAXIAL PASSIVATED TRANSISTOR NPN SILICON HIGH-POWER TRANSISTORS T h e » devices are designed for use In power amplifiers and switching applications,

Contextual Info: 19-2878; Rev 1; 5/07 2:1 Multiplexers and 1:2 Demultiplexers with Loopback The MAX9394/MAX9395 consist of a 2:1 multiplexer and a 1:2 demultiplexer with loopback. The multiplexer section channel B accepts two low-voltage differential signaling (LVDS) inputs and generates a single LVDS

RURP15100

Contextual Info: interdi RURP15100 Data Sheet January 2000 File N u m b e r 2878. 3 15A, 1000V Ultra fast Diode Features The RURP15100 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted,

S0433

Contextual Info: AL L EGRO niCROSYSTEflS I NC T3 J> m GSOMSafl □D0 3 b 73 fl • ALGR T-91-01 PROCESS DFC Process DFC PNP Small-Signal Transistor Process DFC is a PNP silicon double-diffused epi­ taxial planar device designed primarily to be used in medium-power amplifier and switching circuits.

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-8 w v CE m in /m a x @ A /V ^C E O Ic (sus) VOLTS (m a x ) AM PS 2N 1483 40 3 20-60@ .75/4 2N 1 4 8 4 55 3 2 N 1485 40 2 N 1486 2N 1701 i*fe@ ^ C E ( s a t) p * r D fx W ATTS (M H z) 2@ .75/.075 25 1.25

BIT 3195 G

Abstract: TRANSISTOR 5804 transistor 5910 2878 transistor ma 8920 regulator darlington array 2804 BIT 3195 8205 A mosfet 8205 mosfet 5810-FQ
Contextual Info: Allegro MicroSystems Fax-on-Demand: 1-888-286-9288 Outside North America: 1-202-216-1827 ICs and PMCMs PRODUCT INDEX in NUMERICAL ORDER Part Number* Description 8932-A 8958 Motor Drivers Quad, 1.8 A, 50 V Darlington Power Driver Quad, 1.8 A, 50 V Darlington Power Driver

MC 2882

Abstract: 2SC2862 MC 342 transistor 210B MC 2871
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

SLA6023 driver schematic

Abstract: UDN2983A equivalent SMA4033 ULN2068LB STA431A STA458C UDN2580A udn darlington driver ic SLA4031 T02EB0
Contextual Info: POWER & DISPLAY DRIVERS 431 THRU 458, 4310 THRU 4391, 5022 THRU 6030, AND 8001 BRIDGE AND HALF-BRIDGE TRANSISTOR ARRAYS Part Number STA431A STA434A STA457C STA458C SLA4310 SLA4313 SLA4340 SLA4390 SLA4391 SLA8001 SLA5022 SMA6010 SLA6012 SMA6014 SLA6020 SLA6022

SLA6023 driver schematic

Abstract: pinout sla6023 sma4033 SLA6022 driver schematic SLA*6022 udn darlington driver ic SMA4032 SLA6022 sanken 2596 regulators SLA4031
Contextual Info: POWER & DISPLAY DRIVERS 431 THRU 458, 4310 THRU 4391, 5022 THRU 6030, AND 8001 BRIDGE AND HALF-BRIDGE TRANSISTOR ARRAYS Part Number STA431A STA434A STA457C STA458C SLA4310 SLA4313 SLA4340 SLA4390 SLA4391 SLA8001 SLA5022 SMA6010 SLA6012 SMA6014 SLA6020 SLA6022

CNY47/47A

Contextual Info: 3875081 G E S O L ID STATE Optoelectronic Specifications_ H A R R IS S EfllC O N D S EC T O R 01E 3?E D B 4302571 19846 D G0e73afl T-W I • HAS 3 Photon Coupled Isolator C N Y47,CN Y47A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor INCH

transistor f420

Abstract: F420 transistor t430 transistor T591 transistor LT 5222 2SC1940 LT 745 S ifr 220 IFR 730 transistor A514
Contextual Info: NEC Ai > ij n ^ Silico n T r a n s is to r h > ^ X 2SC1940 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-MM/ PA C K A G E D IM EN SIO N S Unit : mm * T" A ^ T > 7 ° < 7 ) 7 ° U O S u i t a b l e for d r i v e r of audio f re q u e n c y ampli f i er a ppl i c at i ons.

TRANSISTOR J 5804

Abstract: j 5804 transistor j 5804 8205 A mosfet transistor 5910 6811 brushless pwm ac chopper 8205 dual mosfet BIT 3195 TMIS-3185/480/3P
Contextual Info: TABLE OF CONTENTS General Information . page 2 Product Selection Guides • ■ ■ ■ ■ ■ ■ ■ Power Sink Drivers . 3

2N3016

Abstract: 13421 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2855-1 2N2856-1
Contextual Info: 17 SILICON POWER TRANSISTORS CURREN T G A IN S A TURATIO N VO LTAG ES 8> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M A X. V CE 'c V A V CE s V BE(s) V I V *C A I *B A 5 AMP SILICON NPN 2 N2657 2N2658 2N2850-1 TO-5 TO-5 TO-5 80 100 100 60

transistor 1000V

Abstract: RURP1580
Contextual Info: m h a rp u s c ti RURP1570, RURP1580 RURP1590, RURP15100 15A, 700V - 1 000V Ultrafast Diodes December 1993 Package Features • Ultrafast with Soft Recovery Characteristic tRR< 100ns JEDEC T0-220AC TOP VIEW • +175°C Rated Junction Temperature • Reverse Voltage Up to 1000V

RUR1560

Abstract: MURI560 RUR15100 RUR1550 Diode MUR1560 RUR1540 MUR1550 Silicon Diode Switching Diode 700v 600V 25A Ultrafast Diode MUR1540
Contextual Info: 2 HARRIS SbE D • 4 3 02 2 7 1 0 0 4 2 3 5 3 5TT ■ M U R 1540 MUR1550 HAS M U R 1 5 6 0 15A Ultrafast Diode With Soft Recovery Characteristic May 1991 HARRIS SEMICOND SECTOR - re a iu re s Package TO-220AC TOP VIEW • Ultrafast with Soft Recovery Characteristic

RUR15100

Abstract: RUR1590 RUR1580 diode rur15100 RUR1570
Contextual Info: / HARRIS SEMICOND SECTOR SbE D •■ , R U R 1 5 70 1580 1 U R 1 5 9 0 /1 5 1 0 0 fi HARRIS ■HAS 15A Ultrafast Diode With Soft Recovery Characteristic 4302271 004230b 20e! August 1991 o B '- n Features • Ultrafast with Soft Recovery Characteristic (trr < 100ns

EMA212

Abstract: EN61000-3-3 EN61000-4-4 EN61000-4-5 EN61000-4-6
Contextual Info: AC-DC 212 Watts xppower.com EMA212 Series • 3.00” x 5.00” x 1.34” • High Power Density - 10.6 W/in3 • Up to 90% Efficiency • 5 V Standby & 12 V Fan Outputs • Active Current Share • Remote On/Off • Power Good Signal • 48 VDC Input Versions Available DMA212

AHP200 Series

Contextual Info: AC-DC Converters www.powersolve.co.uk AHP 200 Series Up to 212 Watts Output Features • • • • • • • • 3.00” x 5.00” x 1.34” High Power Density - 10.6 W/in3 Up to 90% Efficiency 5 V Standby & 12 V Fan Outputs Active Current Share Remote On/Off

EMA212

Abstract: EN61000-3-3 EN61000-4-4 EN61000-4-5
Contextual Info: AC-DC 212 Watts xppower.com EMA212 Series • High Power Density - 10.6 W/in3 • Industry Standard 3 x 5 Footprint • Up to 90% Efficiency • 5 V Standby & 12 V Fan Outputs • Remote On/Off & Power Good Signal • 48 VDC Input Version Available DMA212

Contextual Info: AC-DC 212 Watts xppower.com EMA212 Series • High Power Density - 10.6 W/in3 • Industry Standard 3 x 5 Footprint • Up to 90% Efficiency • 5 V Standby & 12 V Fan Outputs • Remote On/Off & Power Good Signal • 48 VDC Input Version Available DMA212

Sonneberg

Abstract: service-mitteilungen Elegant 6360 2SC684 scans-048 SE3001 POTENTIOMETER 500 OHM ba 6370 "service-mitteilungen" Elegant de luxe
Contextual Info: SERVICE-MITTEILUNGEN iR iid ri! R a d i o -television |VEB IN D U ST RI E V ER TRI EB R U N D F U N K U N D F E R N S E H E N AUSGABE: 15/73 DATUM: Nov. 1973 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Ausbau des Bedienteiles und Herstellen der Steckverbindungen beim VTSIOTRON 113_