28 PIN 28C256 Search Results

28C256TRP-120

Abstract: 28C256TRP-150
Contextual Info: SPACE ELECTRONICS INC. 256K-BIT EEPROM - 32K X 8 EEPROM SPACE PRODUCTS 28C256TRP A14 1 28 VCC A12 2 27 WE VCC A7 3 26 A13 GND A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O 7 I/O 0 11 18 I/O 6 I/O 1 12 17 I/O 5 I/O 2 13 16

Contextual Info: 28C256T 256K EEPROM 32K x 8-Bit EEPROM DATA INPUTS/OUTPUTS I/O0 - I/O7 VCC GND OE WE OE, CE, and WE LOGIC CE Y DECODER ADDRESS INPUTS DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX X DECODER IDENTIFICATION Logic Diagram DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation

d2803

Abstract: 32K x 8-Bit EEPROM
Contextual Info: 28C256T 256K EEPROM 32K x 8-Bit EEPROM DATA INPUTS/OUTPUT I/O0 - I/O7 VCC GND OE WE OE, CE, and WE LOGIC CE Y DECODER ADDRESS INPUTS DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX X DECODER IDENTIFICATION Logic Diagram DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation

YMB 24

Abstract: 28C256ERP f2807
Contextual Info: 32K X 8 EEPROM SPACE ELECTRONICS INC. 28C256ERP SPACE PRODUCTS GROUP A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O7 I/O0 11 18 I/O6 I/O1 12 17 I/O5 I/O3 13 16 I/O4 GND 14 15 I/O3 SEi 28C256ERP

ST 28C256

Contextual Info: 28C256 Timer E 2 2 5 6 K Electrically Erasable P R O M October 1989 Features Description • ■ CMOS Technology Low Power • 60 mA Active • 150 pA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time ■ ■ Byte Write Mode SEEQ's 28C 256 is a C M OS 5 V only, 32K x 8 Electrically

28C256APC-2

Abstract: hex55
Contextual Info: Turbo IC, Inc. 28C256A HIGH SPEED CMOS 256K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 32K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times

28C256B

Abstract: EEPROM 28C256 28C256 microchip
Contextual Info: & 28C256 M ic r o c h ip 256K 32K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 90, 120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA A ctive - 150nA Standby • Fast W rite Cycle Times

atmel 811

Abstract: ROM 28C256 microchip ATMEL 350 Seeq 28C256 28C256 atmel 28C256 Intel 28C256-120 28C256-12 28C256-15
Contextual Info: - I l l - 28C2 56 X ít « 28C256-12 28C256-120 28C256-15 28C256-20 28C256-25 28C256-250 28C256-300 28C256-350 28C256-70 28C256-90 28C256-90 28C256A-150 28C256A-200 28C256A-250 28C256AH-150 28C256AH-200 28C256AH-250 28C256H-120 28C256H- 70 28C256H-90 28F256-170P1C2

Contextual Info: MODULES M28C010 Timer E 2 1024K Electrically Erasable PROM October 1989 Description Features • SEEQ's MM28C010 is a CMOS 5V only, 128Kx 8 Elec­ trically Erasable Programmable Read Only Memory EEPROM . The MM28C010 consists o f4 28C256 (32K x 8) CMOS EEPROMs and a 2 to 4 line decoder in LCC

Contextual Info: 11E » SEEÛ TECHNOLOGY INC • a i n S 3 3 QQOEbTÔ fl MODULES M28C010 Timer E 2 1024K Electrically Erasable PROM October 1989 Description Features SEEQ's MM28C010 is a CMOS 5 V only, 128Kx8Electrically Erasable Programmable Read Only Memory EEPROM . The MM28C010 consists o f4 28C256 (32K

EEPROM 28C256

Contextual Info: 28C256 Timer E2 256K Electrically Erasable PROM October 1989 Description Features • ■ CMOS Technology L o w Power • 60 m A A ctive - 150 fjA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte W rite Time ■ Byte Write Mode ■ Write Cycle Com pletion Indication

28C256 seeq

Abstract: EEPROM 28C256 seeq 28C256
Contextual Info: 28C256 Technology, Incorporated Timer E2 256K Electrically Erasable PROM August 1992 Features Military, Extended and Commercial Temperature Range • -5 5 °C to +125° C Operation Military . -4 0 ° C to +85°C Operation (Extended) • 0°C to +70°C Operation (Commercial)

EEPROM 28C256

Abstract: 28C256 microchip 28C256 28 pin 28c256 28C256-90
Contextual Info: Military St 28C256 M icro ch ip 256K 32K x 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION • Fast read access time—90,120,150 ns maximum • CMOS Technology for low power dissipation —80 mA active —350 |xA standby • Fast byte-write time—3 ms or 10 ms

HD637B01VOP

Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
Contextual Info: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ

27C512

Abstract: 28C64 EPROM programmer Winbond 27c512 27C256 27PC512 st 27c256b 2864A 27pc256 32 pin plcc socket to dil 27c65
Contextual Info: AD50/62 - Package Converters for E E PROMs and FLASH etc (PLCC) Q u C j j lP Page 1 of 5 PRODUCX d a t a sh eet AD62 and AD50 Package Converters for E(E)PROMs and FLASH etc (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch” Miscellaneous

ATMEL 350

Abstract: 5962-87514 AT28C64-15DM/883 transistor smd list at28hc64b-70dm atmel 718 AT28C64-20DM "SMD Code" SMD CODE list smd code book
Contextual Info: SMD Products Introduction to the SMD Product Listing Each Standard Microcircuit Drawing SMD part number that Atmel supplies corresponds to an Atmel /883 part number. SMD products are compliant to MILSTD-883, paragraph 1.2.1 and to the requirements of the applicable standard

eeprom 28c64

Abstract: 5962-87514 AT28C64B-20DM at28c64-20dm AT28C64B-25DM 28C64 EEPROM 5962-88525 15 ZX at28c6425dm smd code led AT28C64-25DM
Contextual Info: Introduction to the SMD Product Listing Each Standard Microcircuit Drawing SMD part number that Atmel supplies corresponds to an Atmel /883 part number. SMD products are compliant to MILSTD-883, paragraph 1.2.1 and to the requirements of the applicable standard

5962-88525

Contextual Info: AT28C256 Features • • Fast Read Access T im e-150 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes internal Control Timer • Fast Write Cycle Times Page Write Cycle Time: 3.0 ms or 10 ms maximum 1 to 64 Byte Page Write Operation

Contextual Info: AT28C256 Features • • • • • • • • • • • Fast Read Access Time -150 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3.0 ms or 10 ms maximum

AT28C256

Contextual Info: AT28C256 Features • • • • • • • • • • • Fast Read Access T im e -1 5 0 ns Automatic Page W rite Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast W rite Cycle Times Page W rite Cycle Time: 3.0 ms o r 10 ms maximum

sumitomo epoxy 6600

Abstract: sumitomo epoxy 1143 at27c256 data retention AT29LV020 sumitomo silver epoxy 28BV256 0c002 ATMEL AT27lv256 AT49*512 AT28C256
Contextual Info: Parallel EEPROM 256Kbit Qualification Summary § Component Design & Construction Description § Test Summary Oper Life Test Data Retention Endurance Rel Humidity Autoclave Temp Cycle ESD Latch-up Electrical Dist./Char. available per request Plastic Package (TSOP, SOIC, PLCC)

1N914

Abstract: 28C256 CAT28C256 MS-011 MS-016
Contextual Info: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

AT28C256

Abstract: 28C256 A12C A14C AT28C256-15 AT28C256-20 AT28C256-25 5962-88525 AT28C256EF
Contextual Info: ATMEL 43E CORP m D 1074177 GOOIS^Q b SATM AT28C256 T -V 6 -/3 -2 7 Features • • • • • • • • • • • Fast Read Access Tim e-150ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times

Contextual Info: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write