27NS Search Results
27NS Result Highlights (3)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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SN74F27NSR |
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Triple 3-input positive-NOR gates 14-SO 0 to 70 |
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SN74HC27NSR |
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Triple 3-Input Positive-NOR Gates 14-SO -40 to 85 |
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SN74LS27NSR |
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Triple 3-input positive-NOR gates 14-SO 0 to 70 |
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27NS Price and Stock
Texas Instruments SN74F27NSRIC GATE NOR 3CH 3-INP 14SO |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SN74F27NSR | Cut Tape | 1,768 | 1 |
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SN74F27NSR | 1,987 |
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Texas Instruments SN74HC27NSRIC GATE NOR 3CH 3-INP 14SO |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SN74HC27NSR | Digi-Reel | 1,618 | 1 |
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SN74HC27NSR | 1,379 |
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SN74HC27NSR | 2,000 | 8 |
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SN74HC27NSR | 10,000 | 1 |
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SN74HC27NSR | Cut Tape | 1,065 | 0 Weeks, 1 Days | 5 |
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Panasonic Electronic Components AQV227NSSSR RELAY SPST-NO 50MA 0-200V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AQV227NS | Tube | 999 | 1 |
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AQV227NS | Tube | 16 Weeks | 75 |
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AQV227NS |
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AQV227NS | 116 |
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AQV227NS | 150 | 1 |
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AQV227NS | 75 |
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ROHM Semiconductor RSDT27NSFHTLTVS DIODE 22VWM LPDS |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RSDT27NSFHTL | Digi-Reel | 979 | 1 |
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RSDT27NSFHTL | 242 |
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RSDT27NSFHTL | Cut Tape | 985 | 1 |
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RSDT27NSFHTL | 100 | 1 |
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ROHM Semiconductor RSDT27NSTLTVS DIODE 22VWM LPDS |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RSDT27NSTL | Cut Tape | 964 | 1 |
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RSDT27NSTL | 943 |
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RSDT27NSTL | 1,000 | 1 |
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RSDT27NSTL | Cut Tape | 995 | 0 Weeks, 1 Days | 1 |
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27NS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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ECU06B60
Abstract: ECU06B60-F
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Original |
ECU06B60-F O-252 ECU06B60 ECU06B60 ECU06B60-F | |
Contextual Info: Bulletin PD-20778 03/02 UFB60FA20 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • trr = 27ns Two Fully Independent Diodes Ceramic Fully Insulated Package VISOL = 2500V AC Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape |
Original |
PD-20778 UFB60FA20 OT-227 UFB60FA20 08-Mar-07 | |
Contextual Info: ファーストリカバリーダイオード Fast Recovery Diode 3A 600V 27ns 外 形 図 30PUB60 拡散型シリコンダイオード FRD 構造 Construction Diffusion type Silicon diode 高周波整流用 用途 Application • 最大定格 Axial Lead Type |
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30PUB60 | |
2536AContextual Info: Preliminary Technical Information IXYA50N65C3 IXYP50N65C3 IXYH50N65C3 XPTTM 650V IGBTs GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 50A 2.10V 27ns TO-263 (IXYA) G E C (Tab) Symbol Test Conditions |
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IXYA50N65C3 IXYP50N65C3 IXYH50N65C3 IC110 20-60kHz O-263 O-247 50N65C3 2536A | |
Contextual Info: Advance Technical Information IXYH50N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 50A 2.1V 27ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES |
Original |
IXYH50N65C3H1 IC110 20-60kHz O-247 IF110 | |
Contextual Info: ファーストリカバリーダイオード Fast Recovery Diode 3A 600V 27ns 外 形 図 30PUB60 拡散型シリコンダイオード FRD 構造 Construction Diffusion type Silicon diode 高周波整流用 用途 Application • 最大定格 Axial Lead Type |
Original |
30PUB60 20x20x1t | |
Contextual Info: 5A 200V 27ns FRD Type FSU05A20 •OUTLINE DRAWING 構造 :拡散型シリコンダイオード FRD Diffusion type Silicon diode Axial Lead Type 用途 :高周波整流用 Application: High Frequency Rectification ■ 最大定格 Approx Net Weight:1.7g |
Original |
FSU05A20 Ta25unless | |
Contextual Info: カソードコモン Fast Recovery Cathode Common 6A 600V 27ns similar to TO-251 外 形 図 ECU06B60 拡散型シリコンダイオード FRD 構造 Construction Application • 最大定格 Diffusion type Silicon diode 力率改善用コンバータチョッパの高周波整流用 |
Original |
O-251 ECU06B60 | |
30PUB60Contextual Info: s DIODE Type : 30PUB60 OUTLINE DRAWING 3A 600V 27ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current |
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30PUB60 30PUB60 20x20x1t | |
mil-l-3661
Abstract: EN60825-1
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557-1101-IRE EN60825-1 mil-l-3661 EN60825-1 | |
Contextual Info: Preliminary Technical Information IXYH50N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 50A 2.10V 27ns TO-247AD Symbol Test Conditions Maximum Ratings |
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IXYH50N65C3H1 IC110 20-60kHz O-247AD IF110 50N65C3 8-09-13/DMHP19-067F | |
transistor c 557
Abstract: mil-l-3661 transistor 557 b EN60825-1 557142
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557-1101-WIRE EN60825-1 transistor c 557 mil-l-3661 transistor 557 b EN60825-1 557142 | |
Contextual Info: s DIODE Type : 30PUB60 OUTLINE DRAWING 3A 600V 27ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current |
Original |
30PUB60 30PUB60 | |
IXXR110N60B4H1Contextual Info: Advance Technical Information IXXR110N60B4H1 XPTTM 600V GenX4TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 75A 2.0V 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings |
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5-30kHz IC110 IXXR110N60B4H1 ISOPLUS247TM 110N60B4 IXXR110N60B4H1 | |
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IRFP250
Abstract: UFB60FA20 HEXFET pinout
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Original |
PD-20778 UFB60FA20 OT-227 UFB60FA20 12-Mar-07 IRFP250 HEXFET pinout | |
IRFP250
Abstract: UFB60FA20
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Original |
PD-20778 UFB60FA20 OT-227 UFB60FA20 IRFP250 | |
BURR-BROWN 546Contextual Info: Or, M l Castomer S em e it 1-80B-548-6132 USA Only FEATURES APPLICATIONS • CLOSED-LOOP OUTPUT AMPLIFIER • ±0.01% FSR LINEARITY max • ACQUISITION TIME (2.5V step): 1% FSR 17ns typ 0.1% FSR 27ns typ 0.02% FSR 40ns typ • 300V/|iS SLEW RATE • 24-PIN CERAMIC DIP |
OCR Scan |
1-80B-548-6132 24-PIN SHC600 12-bit 0996MHz 4707MHz 17313bS 00EEBL7 BURR-BROWN 546 | |
Contextual Info: Advance Technical Information IXYH50N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 50A 2.1V 27ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IXYH50N65C3 IC110 20-60kHz O-247 50N65C3 | |
tnd 501
Abstract: burr-brown 546 673D SHC600BH Burr-Brown adc converters nIc 4 burr-brown 546 power supply
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OCR Scan |
24-PIN SHC600 12-bit 4707MHz 17313L5 0022flb7 tnd 501 burr-brown 546 673D SHC600BH Burr-Brown adc converters nIc 4 burr-brown 546 power supply | |
ECU06B60Contextual Info: FRD Type : ECU0 CU06B60 OUTLINE DRAWING 6A 600V 27ns FEATURES * TO-251AA Case * Ultra – Fast Recovery * Low Power Loss APPLICATIONS For Powert Factor Inprovement High Frequency Rectification Maximum Ratings Approx Net Weight:0.35g Rating Symbol ECU06B60 |
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ECU06B60 O-251AA ECU06B60 | |
30PUB60Contextual Info: s DIODE Type : 30PUB60 OUTLINE DRAWING 3A 600V 27ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current |
Original |
30PUB60 30PUB60 | |
AT45DB081D
Abstract: JEP106 PA10 PA11 AT45DB081D-MU-SL954
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66MHz 256-Bytes 264-Bytes 256-Bytes 256/264-Bytes/Page) 256-Bytes) 64-Kbytes) 256-/264-Bytes) 3596M AT45DB081D JEP106 PA10 PA11 AT45DB081D-MU-SL954 | |
ISL6334B
Abstract: ISL6334BCRZ ISL6334BIRZ ISL6334C ISL6334CIRZ MO-220 VR11 isl6622
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ISL6334B, ISL6334C ISL6334C 5m-1994. FN6689 ISL6334B ISL6334BCRZ ISL6334BIRZ ISL6334CIRZ MO-220 VR11 isl6622 | |
K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
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BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm |