27JAN2014 Search Results

Contextual Info: STEVAL-CBL015V1 Single LNB supply and control IC DiSEqC 1.x compliant with DSQIN based on the LNBH29 in a QFN16 4x4 Data brief • • • • Low-drop post regulator and high-efficiency step-up PWM with integrated power N-MOS allowing low power losses Overload and overtemperature internal

Contextual Info: SN74LVC2G53 www.ti.com SCES324N – JULY 2001 – REVISED JANUAY 2014 SN74LVC2G53 Single-Pole Double-Throw SPDT Analog Switch 2:1 Analog Multiplexer/Demultiplexer Check for Samples: SN74LVC2G53 FEATURES DESCRIPTION • This dual analog multiplexer/demultiplexer

Contextual Info: SN74LVC2G53 www.ti.com SCES324N – JULY 2001 – REVISED JANUAY 2014 SN74LVC2G53 Single-Pole Double-Throw SPDT Analog Switch 2:1 Analog Multiplexer/Demultiplexer Check for Samples: SN74LVC2G53 FEATURES DESCRIPTION • This dual analog multiplexer/demultiplexer

Contextual Info: SN74AUP1T34-Q1 SCES852 – DECEMBER 2013 1-Bit Unidirectional Voltage-Level Translator 1 Features 2 Description • The SN74AUP1T34-Q1 is a 1-bit non-inverting translator that uses two separate configurable powersupply rails. It is a uni-directional translator from A to

Contextual Info: CSD17381F4 SLPS411C – APRIL 2013 – REVISED FEBRUARY 2014 CSD17381F4, 30 V N-Channel FemtoFET MOSFET 1 Features • • • • 1 • • • • . Product Summary Ultra-Low On Resistance Ultra-Low Qg and Qgd Low Threshold Voltage Ultra-Small Footprint 0402 Case Size

hc14

Abstract: SNV54HC14W TI hc14 hc14 S HC14 SOIC
Contextual Info: SN54HC14, SN74HC14 www.ti.com SCLS085G – DECEMBER 1982 – REVISED JANUARY 2014 SNx4HC14 Hex Schmitt-Trigger Inverters Check for Samples: SN54HC14, SN74HC14 FEATURES DESCRIPTION • • • • • • These Schmitt-trigger devices contain six independent inverters. They perform the Boolean

Contextual Info: SN74AUP1T34-Q1 www.ti.com SCES852 – DECEMBER 2013 1-Bit Unidirectional Voltage-Level Translator FEATURES DESCRIPTION • The SN74AUP1T34-Q1 is a 1-bit non-inverting translator that uses two separate configurable powersupply rails. It is a uni-directional translator from A to

ADS8350

Abstract: ADS7850 ADS7250
Contextual Info: ADS8350 ADS7850 ADS7250 www.ti.com SBAS580A – MAY 2013 – REVISED JANUARY 2014 Dual, 750-kSPS, 16-, 14-, and 12-Bit, Simultaneous-Sampling, Analog-to-Digital Converter Check for Samples: ADS8350, ADS7850, ADS7250 FEATURES DESCRIPTION • • • • •

Contextual Info: SN54LVC14A, SN74LVC14A www.ti.com SCAS285Z – MARCH 1993 – REVISED JANUARY 2014 SNx4LVC14A Hex Schmitt-Trigger Inverters Check for Samples: SN54LVC14A, SN74LVC14A FEATURES DESCRIPTION • • The SN54LVC14A hex Schmitt-trigger inverter is designed for 2.7-V to 3.6-V VCC operation, and the

ufdfpn8 footprint

Abstract: dfn8 tray ufdfpn8 ufdfpn8 thermal resistance 91/157/AET
Contextual Info: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet - production data Applications • Ear-face proximity detection for smart phone devices SO8 narrow • Companion device for navigation joystick/optical track pad UFDFPN8

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2006 2 3 1 2006 RELEASED FOR PUBLICATION REVISIONS ALL RIGHTS RESERVED. BY - 69.1+0.6 P C 13.3 D DESCRIPTION LTR C1 DWN APVD SERIES GEOMETRY 23MAY2007 SKA TG UPDATED TOLERANCE LENGHT 61.1 05MAY2011 AV GT ECR-14-001570

Contextual Info: SN74AUP1T34-Q1 www.ti.com SCES852 – DECEMBER 2013 1-Bit Unidirectional Voltage-Level Translator FEATURES DESCRIPTION • The SN74AUP1T34-Q1 is a 1-bit non-inverting translator that uses two separate configurable powersupply rails. It is a uni-directional translator from A to

stac2942

Contextual Info: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

Contextual Info: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%

Contextual Info: STEVAL-CBL014V1 Dual LNB supply and control IC DiSeqC 1.x compliant based on the LNBH26L Data brief • • • • • 22 kHz tone waveform integrity guaranteed also at no load Low-drop post regulator and high-efficiency step-up PWM with integrated power N-MOS

L2904

Contextual Info: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V www.ti.com SLOS068S – JUNE 1976 – REVISED MAY 2013 Dual Operational Amplifiers Check for Samples: LM158, LM258, LM258A, LM358, LM358A, LM2904, LM2904V FEATURES DESCRIPTION • These devices consist of two independent, high-gain

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC AA ALL RIGHTS RESERVED. - 1 REVISIONS DIST 22 P 15 [ .59 ] 11.8 0.1 [ .465 .003 ] 18.15 [ .715 ] 2 SHIELD 0.42 0.08 [ .017 .003 ] 1 2.58 [ .102 ] 2 PLC D 9.58 [ .377 ]

SBL30U60

Contextual Info: SBL30U60 Voltage 60V,30 Amp Low VF Planar MOS Barrier Schottky Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220 FEATURES B N D E Planar MOS Schottky technology Low forward voltage drop High current capability

Contextual Info: ULN2803A www.ti.com SLRS049F – FEBRUARY 1997 – REVISED JANUARY 2014 ULN2803A Darlington Transistor Arrays Check for Samples: ULN2803A FEATURES DESCRIPTION • The ULN2803A device is a high-voltage, high-current Darlington transistor array. The device consists of

Contextual Info: STEVAL-CBL016V1 Single LNB supply and control IC DiSEqC 1.X compliant with EXTM based on the LNBH29 in a QFN16 4x4 Data brief • • • • Low-drop post regulator and high-efficiency step-up PWM with integrated power N-MOS allowing low power loss Overload and overtemperature internal

Contextual Info: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 300 W min. with 20 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

SMS6001

Abstract: MosFET
Contextual Info: SMS6001 440mA, 60V, RDS ON 2Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS SOT-23 The SMS6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and

Contextual Info: TPS61280, TPS61281, TPS61282 www.ti.com SLVSBI1 – OCTOBER 2013 Low-, Wide- Voltage Battery Front-End DC/DC Converter Single-Cell Li-Ion, Ni-Rich, Si-Anode Applications Check for Samples: TPS61280, TPS61281, TPS61282 FEATURES DESCRIPTION • • The TPS6128x device provides a power supply

D20XB100

Contextual Info: D20XB40 . D20XB100 20 Amp. Glass Passivated Single Phase In Line Bridge Rectifier IN LINE BIG ~ ~ Current 20 A Voltage 400 V to 1000 V FEATURES • UL recognition file number E320541, Vol. 2 • Ideal for printed circuit board • High case dielectric strength of 2000 Vrms