27JAN2005 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. ART WV COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 2 3 - LOC ALL RIGHTS RESERVED. DIST AJ R E V IS IO N S 16 P LTR DESCRIPTION R ELEASED PER DATE DWN 27JAN2005 0S 1 4 - 0 4 9 6 - 0 4 APVD JGH JL

dvd optical pickup

Abstract: PCM1704 OPTICAL laser pickup PCM1704U PCM1704U-J PCM1704U-K
Contextual Info: PCM1704 49% 170 4 FPO PCM 24-Bit, 96kHz BiCMOS Sign-Magnitude DIGITAL-TO-ANALOG CONVERTER TM FEATURES DESCRIPTION ● SAMPLING FREQUENCY fS : 16kHz to 96kHz The PCM1704 is a precision, 24-bit digital-to-analog converter with exceptionally high dynamic performance. The ultra-low distortion and excellent lowlevel signal performance makes the PCM1704 an ideal

P80NF10

Abstract: P80NF b80nf1 b80nf10 P80NF-10
Contextual Info: STB80NF10 STP80NF10 N-channel 100V - 0.012Ω - 80A - TO-220 / D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID(1) STP80NF10 100V <0.015Ω 80A STB80NF10 100V <0.015Ω 80A • Exceptional dv/dt capability ■ 100% Avalanche tested

220190-1

Abstract: spec cable RG-174 amp 220190-1
Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AJ DIST R E VIS IO N S 16 LTR DESCRIPTION DATE RELEASED PER 0S1 4 - 0 4 9 6 - 0 4 DWN APVD JGH JL 2 7 JA N 2 0 0 5 D D USE

I.MX31

Contextual Info: Freescale Semiconductor Chip Errata Document Number: MCIMX31CE Rev. 5.7, 1/2013 MCIMX31 and MCIMX31L Chip Errata M91E, Rev. 2.0 and Rev. 2.0.1 This document contains errata information for: MCIMX31 and MCIMX31L i.MX31 and i.MX31L for the silicon masks 2.0 and 2.0.1, shown in Table 1.

CR584

Abstract: SYS68K ARM11 3L38W 2L38W IMX* Sony IPS1301BS hard reset arm11 TLSbo91748 MCIMX31L
Contextual Info: Freescale Semiconductor Chip Errata MCIMX31 and MCIMX31L M91E, Rev. 2.0 and Rev. 2.0.1 This document contains errata information for: MCIMX31 and MCIMX31L i.MX31 and i.MX31L for the silicon masks 2.0 and 2.0.1, shown in Table 1. Table 1. Silicon Revision

JESD22-A114

Abstract: JESD22-A115 Sawtek 140
Contextual Info: Part Number 854916 140 MHz SAW Filter Data Sheet Features • • • • • • • Usable bandwidth of 10 MHz Typical 3 dB bandwidth of 10.59 MHz Low loss High attenuation Single-ended operation Ceramic Surface Mount Package SMP Hermetic • Package Pin Configuration

RHFAC16244K1

Abstract: FPC-48 rhfac16244k01v 54AC16244 5962-0421
Contextual Info: 54AC16244 16-BIT BUS BUFFER WITH 3-STATE OUTPUTS NON INVERTED • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.5 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 8 µA (MAX.) at TA = 25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.)

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R P U B L IC A T IO N A LL R IG H TS RESERVED. C O P Y R IG H T EUNCTION DATE CODE 04-YEAR 01 -WEEK AND COUNTRY OE ORIGIN D ON ON ALCO 4.85 [.190] 1.02 [.040] 1.52 [.060] 4.70 + 0.41 [.185 + .01 6]

ecopack datecode

Abstract: EMIF10-COM01C2
Contextual Info: EMIF10-COM01C2 IPAD EMI FILTER INCLUDING ESD PROTECTION MAIN PRODUCT CHARACTERISTICS EMI filtering and ESD protection for: • ■ ■ Computers and printers Communication systems Mobile phones DESCRIPTION The EMIF10-COM01C2 is a highly integrated device designed to suppress EMI / RFI noise in all

P80NF10

Abstract: STP80NF10 B80NF10 JESD97 STB80NF10 STB80NF10T4 p80n
Contextual Info: STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET II Power MOSFET Features • Type VDSS RDS on max ID STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015 Ω 80 A Exceptional dv/dt capability 3 3 1 ■ 100% Avalanche tested

mar105

Abstract: 817c TMS320C6414T TMS320C6415T TMS320C6416T MAR101 ESRH c64x PI-D-S-E-L
Contextual Info: TMS320C6414T, TMS320C6415T, TMS320C6416T FIXEDĆPOINT DIGITAL SIGNAL PROCESSORS SPRS226D − NOVEMBER 2003 − REVISED OCTOBER 2004 D Highest-Performance Fixed-Point Digital D D D D D Signal Processors DSPs − 1.67-/1.39-/1.17-/1-ns Instruction Cycle − 600-/720-/850-MHz, 1-GHz Clock Rate

Contextual Info: LOC REVI SI ONS D IST J p — s s D ESCR IPTIO N LTR A1 DWN DATE RK HM R 23MAR11 R E V ISE D P E R ECO-11-005030 APVD 1 .45 -0.5M AX CUT OFF TAB •°-1 -4 .4 - J 1.75 unj j = D M 0 = - I 1.86 (1 .5 2 ) SECT. B - B ( 2.2)0.4- (2 .7 ) SECT. C-C NOTE 1. G EN ERAL T O R ELA NC E : ±0.3,±3°

b80nf1

Contextual Info: STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET II Power MOSFET Features Type • RDS on max VDSS ID STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015 Ω 80 A Exceptional dv/dt capability 1 ■ 100% Avalanche tested

LPC47N249

Abstract: JM20330 Inventec PAD1000 JM20330 A. Note L1029 Inventec HAINAN-19 L1038 Q1009 Q101-5
Contextual Info: HAINAN 19 VP BUILD 2005.02.24 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : Hainan19 SIZE CODE A3 CS SHEET DOC. NUMBER REV TC9821 1 A01 OF 67 TABLE OF CONTENTS

BAT54

Abstract: RC410M BAT54C3 27b4 INVENTEC SP8K10SFD5_ROHM ATI SB450 KNOCKHILL 10 12ah3 P19E-6
Contextual Info: San Antonio 10E PreMP BUILD EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : Knockhill 10A SIZE CODE A3 DOC. NUMBER REV X01 CS SHEET 1 OF 50 TABLE OF CONTENTS PAGE

p80nf10

Abstract: P80NF b80nf1 b80nf10 STP-80 STB80NF10T4 STP80NF10 equivalent to P80NF10 STB80NF10 stp80
Contextual Info: STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET II Power MOSFET Features • Type VDSS RDS on max ID STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015 Ω 80 A Exceptional dv/dt capability 3 3 1 ■ 100% Avalanche tested

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R P U B L IC A T IO N ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S —I uUgüBGD 2A 250VAC V 5A 120VAC — 1 1-1 f— D 1 R IG H T S RESERVED. C O R P O R A T IO N . 2 DATE CODE 04-YEAR

P80NF10

Abstract: B80NF10 equivalent to P80NF10 MOSFET 50V 100A TO-220 JESD97 STB80NF10 STB80NF10T4 STP80NF10
Contextual Info: STB80NF10 STP80NF10 N-channel 100V - 0.012Ω - 80A - TO-220 / D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID(1) STP80NF10 100V <0.015Ω 80A STB80NF10 100V <0.015Ω 80A • Exceptional dv/dt capability ■ 100% Avalanche tested