27HC Search Results

Contextual Info: 2 7 H C 1 2 8 U.V. 128K Erasable CMOS 16K X 8 EPROM I Product Specification FEATURES DESCRIPTION PIN CONFIGURATION • Address access time: - 27HC128-55 55ns max - 27HC128-45 45ns max • Operating lcc: 110mA max • 3-State outputs • JEDEC standard 24-pin DIP

9127H

Contextual Info: 27HC191 /27HC291 M icrochip 16K 2K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • Bipolar performance — 35ns Access tim e available • CMOS technology for low power consumption — 65m A Active current — 10OnA Standby current (low power option)

Contextual Info: MICROCHIP TECHNOL OGY INC 22E D blD3SDl 00QM7T7 ñ 27HC64 M ic r o c h ip 64K 8K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • Bipolar Performance — 40ns Maximum Access Time • CMOS Technology For Low Power Consumption — 80mA Active Current

Contextual Info: M ic r o c h ip 27HC1616 256K 16K X 16 High Speed CMOS EPROM FEATURES DESCRIPTION • 16 bit configuration • High speed performance —55 ns access time available • CMOS Technology for low power consumption —90 mA Active current —50 mA Standby current

4342414

Abstract: microprocessor 80386 internal architecture 27HC1616-55 27HC1616-70
Contextual Info: & 27HC1616 Microchip 256K 16K X 16 High Speed CMOS Erasable PROM FEATURES DESCRIPTION • 16 bit configuration • High speed performance —55ns access time available • CMOS Technology for low power consumption —90mA Active current —50mA Standby current

27HC128

Abstract: 27HC128-45 27HC128-55 direct replacement
Contextual Info: 27HC128 O.T.P. One Time Programmable 128K 16K X 8 EPROMs Preliminary Specification Application Specific Products DESCRIPTION FEATURES The 27HC128 CMOS, O.T.P. EPROM is a high-speed electrically programmable Read Only Memory. It is organized as 16,384 words of 8 bits and operates

27HC641

Abstract: 27HC641-70
Contextual Info: & Military 27HC641 M icrochip 64K 8K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • Bipolar performance The Microchip Technology Inc. 27HC641 is a CMOS 64K bit ultraviolet light Erasable (electrically) Program­ mable Read Only Memory. The device is organized as

27HC191

Abstract: 27HC tcs2
Contextual Info: MICROCHIP TECHNOLOGY INC 5EE D • blD3SQl Q0QMÖ05 3 'F W r llr Z q M 27HC191 /27HC291 ic r o c h ip 16K 2K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • Bipolar performance — 35ns Access time available • CMOS technology for low power consumption

11115C

Abstract: DA1020 27HC641-40/J
Contextual Info: 27HC641 M icroch ip 64K 8K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • Bipolar Performance The Microchip Technology Inc 27HC641 is a CMOS 64K — 40ns Maximum Access Time bit ultraviolet light Erasable (electrically) Programm able • CMOS Technology For Low Power Consumption

27HC641

Abstract: 27HC64-05 27HC64-07 27HC64-10 27HC64-15 E104
Contextual Info: > E R EV IS IO N S taW SVM DATE CN DESCRIPTION SHT 3H CM ASP ô r *5 Ro Ç O SV 006047 z ü Ul a v> & T PRELIMINARY CUSTOMER PROCUREMENT SPECIFICATION 6,i , 27HC64/27HC641 ' ;'j /f 64K UV ERASABLE RPOM «MEET CAST REV SHEET LAST REV DISTRIBUTION LIST PLANT

27HC01

Contextual Info: IIIIICRTRÜTST 27HC010I/27HC01 OM •fill S E M I C O N D U C T O R 2231 CALLE DE LUNA, SANTA CLARA. CA 95054 Telephone: 408 748-7700 27HC010I/27HC010M 131,072 X 8-BIT HIGH-SPEED CMOS EPROM DESCRIPTION FEATURES The 27HC010I/27HC010M is a high speed 1

Contextual Info: GENERAL INSTRUMENT 27HC64 P R E L IM IN A R Y IN F O R M A T IO N 64K 8K x 8 High Speed CMOS UV Erasable PROM FEATURES PIN CONFIGURATION • Bipolar Performance — 45ns Maximum Access Time ■ CMOS Design — Low Power Dissipation — 80mA Active Current

24 SIGNETICS

Abstract: 27HC641 84PGA
Contextual Info: NAPC/ S I G N E TIC S/ ni LI TA RY Signetics 20 E D • bbSB^St, 000173b T 27HC641 64K-Bit CMOS PROM 8Kx 8 Product Specification Military CMOS Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 27HC641 is a CMOS, high-speed UV erasable, electronically programmed

Contextual Info: Microchip 2 7 H C 1 6 1 6 256K 16K x 16 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION 16 bit configuration The Microchip Technology Inc. 27HC1616 is a CMOS High speed performance 16K x 16 (256K) Programm able Read Only Memory. — 55ns Maximum access time

BIPOLAR PROM PROGRAMMING SPECIFICATION

Abstract: SIGNETICS prom signetics SIGNETICS semiconductor 27HC641 cmos prom
Contextual Info: Philips Components-Signetics 27HC641 Document No. 853-1212 ECN No. 006580 Date o f Issue April 28, 1992 Status Product Specification 64k-bit CMOS PROM 8k x 8 Military CMOS Memory Products DESCRIPTION The 27HC641 is a CMOS, high-speed UV erasable, electronically programmed

27HC256

Abstract: 27C256 27HC256-55 27HC256-70 3A11 A12C HA14
Contextual Info: & 27HC256 M icro ch ip 256K 32K x 8 High Speed CMOS EPROM FEATURES DESCRIPTION • The Microchip Technology Inc 27HC256 is a CMOS 256K bit (electrically) Programmable Read Only Memory. The device is organized into 32K words of 8 bit each. Advanced CMOS technology allows bipolar speed with

h0715

Contextual Info: Philips Components-Signetics 27HC641 Document No. 853-0290 ECN No. 01041 Date of Issue November 12,1990 Status Product Specification 64K-bit CMOS EPROM 8K x 8 Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES Philips Components-Signetics 27HC641 CMOS EPROM is a high-speed

Contextual Info: & M ic ro c h ip 2 7 H C 1 6 1 6 256K 16K x 16 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • 16 bit configuration The Microchip Technology Inc. 27HC1616 is a CMOS 16K x 16 (256K) Programmable Read Only Memory. • High speed performance — 45ns Maximum access time

Contextual Info: 27HC1616 M ic r o c h ip 256K 16K X 16 High Speed CMOS EPROM FEATURES DESCRIPTION • 16 bit configuration • High speed performance —55 ns access time available • CMOS Technology for low power consumption —90 mA Active current —50 mA Standby current

Contextual Info: 27HC256 M ic r o c h ip 256K 32K x 8 High Speed CMOS EPROM FEATURES • • • • • • • PIN CONFIGURATIONS High speed performance — 55 ns access time available CMOS technology for low power consumption — 55m A active current — 100 nA standby current (low power option)

Contextual Info: 27HC256 M ic r o c h ip 256K 32K x 8 High-Speed CMOS EPROM FEATURES PACKAGE TYPE DIP • High speed performance - 55 ns access time available • CMOS Technology for low power consumption - 55 mA Active current Vpp E • 1 A12C 2 A7C 3 A6 C 4 A5C 5 A4 Z 6

27HC416

Contextual Info: & 27HC416 M icrochip 64K 4K x 16 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance — 45ns Maximum access time • CMOS Technology for low power consumption — 90mA Active current — 100(iA Standby current (low power option)

1124B

Abstract: 27HC256
Contextual Info: 27HC256 M icro ch ip 256K 32K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • The Microchip Technology Inc 27HC256 is a CMOS 256K bit (ultraviolet light) Erasable (electrically) Pro­ grammable Read Only Memory. The device is organ­ ized into 32K words of 8 bit each. Advanced CMOS

Contextual Info: M 27HC1616 ic r o c h ip 256K 16K x 16 High-Speed CMOS EPROM PACKAGE TYPE FEATURES • 16 bit configuration DIP • High speed performance 3 Voo vpp C ce C D nc - 55 ns access time available • CMOS Technology for low power consumption Dnc 3 nc 3*13 3*12