27NOV06 Search Results

K612

Abstract: smith trigger T64 SERIES TERMINAL LOCK leonard 140ct98 8907 K61-2 ta 8907
Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC ALL RIGHTS RESERVED. R E V IS IO N S DIST 00 AD LTR B DESCRIPTION REVISED PER EC -0G 3G -0005-05 DATE DWN APVD 27NOV06 GS MG - .0 1 0 c l+ ho o .375, I —

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Abstract: Vishay 0414 resistor cecc 40101-806 vishay 0204 MBA020
Contextual Info: MBA/SMA 0204 VG06, MBB/SMA 0207 VG06, MBE/SMA 0414 VG06 Vishay Beyschlag Leaded Resistors with Established Reliability CECC 40101-806, Version E FEATURES • Approved according to CECC 40101-806, version E • • • • • MBA/SMA 0204 VG06, MBB/SMA 0207 VG06

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Abstract: 3 phase motor soft starter circuit diagram ST7FLI19BF1U6 ATIC 64 soft starter for single phase induction motor JRC 5002 16 PIN PIR SENSOR IC PINOUT 702 TRANSISTOR smd 702 Z TRANSISTOR smd c02 sensor
Contextual Info: ST7LITE1xB 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI Memories – up to 4 Kbytes single voltage extended Flash XFlash Program memory with read-out protection, In-Circuit Programming and In-Application programming (ICP and IAP). 10K write/

Contextual Info: BPW83 Vishay Semiconductors Silicon PIN Photodiode Description BPW83 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters λ p ≥ 800 nm .

74297

Abstract: SUM52N20-39P SUM52N20-39P-E3
Contextual Info: SUM52N20-39P Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (Ω) ID (A) 0.038 at VGS = 15 V 52 0.039 at VGS = 10 V 52 Qg (Typ) 81 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested

74398

Abstract: Si1972DH Si1972DH-T1-E3
Contextual Info: Si1972DH Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 Qg (Typ) • TrenchFET Power MOSFET APPLICATIONS 0.91 nC SOT-363 SC-70 (6-LEADS)

74344

Abstract: SI4388DY
Contextual Info: Si4388DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 Channel-2 rDS(on) (Ω) 0.016 at VGS = 10 V 0.024 at VGS = 4.5 V 0.015 at VGS = 10 V 0.017 at VGS = 4.5 V 30 30 ID (A)a 10.7

Si1970DH

Contextual Info: SPICE Device Model Si1970DH Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74347

Abstract: 74347 datasheet si4674
Contextual Info: SPICE Device Model Si4674DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUM40N10-30

Contextual Info: SPICE Device Model SUM40N10-30 Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74418

Abstract: TX+315+wxc-810 s-video composite vga s-video 8 pin to composite Tx_315 DG2707
Contextual Info: SDG2707 Vishay Siliconix Differential 4:1 Multiplexer DESCRIPTION FEATURES • Low Voltage Operation 2.8 V to 3.6 V The SDG2707 is a DIFFERENTIAL 4 to 1 MULTIPLEXER designed for high performance mix signal switching. It is configured to handle VGA… signals. To optimize the switch signal integrity, there are two types of switching elements in the

S186P

Contextual Info: S186P Vishay Semiconductors Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters λ p ≥ 900 nm .

BPW77NA

Abstract: BPW77NB BPW77N
Contextual Info: BPW77N Vishay Semiconductors Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ± 10° makes it insensible to ambient straylight.

BPW96

Abstract: BPW96A BPW96B BPW96C
Contextual Info: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared

74281

Contextual Info: SUP90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d d 0.006 at VGS = 8 V 90 0.0085 at VGS = 6 V 90d • TrenchFET Power MOSFETS • 175 °C Junction Temperature

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Abstract: 74276
Contextual Info: Si1458DH Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.058 at VGS = 4.5 V 4.1a 0.082 at VGS = 2.5 V 3.0 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 4.85 RoHS APPLICATIONS

Si1470DH

Abstract: Si1470DH-T1-E3 Si1470
Contextual Info: Si1470DH Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.066 at VGS = 4.5 V 4.0a 0.095 at VGS = 2.5 V 4.0 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 4.85 RoHS APPLICATIONS

Si7326DN

Abstract: 74444 Si7326DN-T1-E3
Contextual Info: Si7326DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0195 at VGS = 10 V 10 0.030 at VGS = 4.5 V 8 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile

R0100

Abstract: SR55L
Contextual Info: SR Vishay Dale Wirewound Resistors, Open Air, Current Sense, Low Value FEATURES • Open air design • Low resistance values for all types of current sensing, voltage division and pulse applications including switching and linear supplies, instrumentation and power amplifiers

Contextual Info: ST7LITE1xB 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI Memories – up to 4 Kbytes single voltage extended Flash XFlash Program memory with read-out protection, In-Circuit Programming and In-Application programming (ICP and IAP). 10K write/

74344

Abstract: si4388
Contextual Info: Si4388DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 Channel-2 rDS(on) (Ω) 0.016 at VGS = 10 V 0.024 at VGS = 4.5 V 0.015 at VGS = 10 V 0.017 at VGS = 4.5 V 30 30 ID (A)a 10.7

BPW76A

Abstract: BPW76 BPW76B
Contextual Info: BPW76 Vishay Semiconductors Silicon NPN Phototransistor Description BPW76 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics.

BPW46

Contextual Info: BPW46 Vishay Semiconductors Silicon PIN Photodiode Description BPW46 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. The large active area combined with a flat case gives

BPW16N

Abstract: CQY36N
Contextual Info: CQY36N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.