27JAN03 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC A LL RIGHTS RESERVED. G REVISIONS DIST 50 LTR DESCRIPTION REV PER 0G61 — 0 0 1 2 -0 3 DATE DWN APVD 27JAN03 JR MS D D ±.025 ±.025 .025 B B CDLDR CDDED RED

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION DATE REV PER 0G61 — 0 0 1 2 — 03 DWN 27JAN03 APVD JR MS D D B B ACTIVE 30501-09-90 STANDARD

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G A LL RIGHTS RESERVED. DIST R EVISIONS 50 LTR B DESCRIPTION REV PER 0G 61- 0 0 1 1 - 0 3 DATE DWN APVD 27JAN03 JR MJ D D SIGHT HDLE ± .0 2 5 ±.010 .286 DIA.

1526196-2

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR B DESCRIPTION DWN DATE REV PER 0G61 — 0 0 1 2 — 03 27JAN03 APVD JR MS D D +.010 +.005 .405 DIA. 315 ±-015

ASTM-B-196

Abstract: D171 00779
Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. LOC RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. COPYRIGHT DIST REVISIONS AJ BY TYCO ELECTRONICS CORPORATION. LTR B DESCRIPTION DATE REV PER 0S14 — 0 0 1 8 — 03 DWN APVD KW KW 27JAN03 D D AA GROUND PAD TYP 1408120 — 1.10 [ . 0 4 3 ]

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC A LL RIGHTS RESERVED. G REVISIONS DIST 50 LTR B DESCRIPTION REV PER 0G61 — 0 0 1 2 - 0 3 DATE DWN APVD 27JAN03 JR MS D D ±.005 .336 — © & @ STAMPED

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G A LL RIGHTS RESERVED. REVISIONS DIST 50 LTR DESCRIPTION REV PER 0G61 — 0 0 1 3 - 0 3 DATE DWN APVD 27JAN03 JR MS D D ±.005 ,275 — DIA, *±,015 en

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION DATE REV PER 0 G 6 1 - 0 0 1 1 - 0 3 DWN 27JAN03 APVD JR MS D D B B □ BSEILETE 30501-11-45

JESD22-A115

Abstract: SA25C512 SA25C512E SA25C512L SA25F020 SAIFUN flash
Contextual Info: Features •= •= •= •= •= Saifun NROM Flash Cell Serial Peripheral Interface SPI Compatible Supports SPI Modes 0 (0,0) and 3 (1,1) Byte and Page Write Modes (up to 128 bytes) Single Supply Voltage: 2.7V to 3.6V (L) 4.5V to 5.5V (H) •= •= 10MHz Clock Rate

JESD22-A115

Abstract: SA25C1024 SA25C1024E SA25F020
Contextual Info: Features •= •= •= •= •= Saifun NROM Flash Cell Serial Peripheral Interface SPI Compatible Supports SPI Modes 0 (0,0) and 3 (1,1) Byte and Page Write Modes (up to 128 bytes) Single Supply Voltage: 2.7V to 3.6V (L) 4.5V to 5.5V (H) •= •= 10MHz Clock Rate

Si7705DN

Contextual Info: Si7705DN New Product Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) -20 D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile

TRANSISTOR SMD MARKING CODE sn

Abstract: smd transistor marking code D13 marking code s20 SMD Transistor S19 SMD MARKING CODE smd diode marking s16 smd marking s14 smd transistor marking D10 code marking s20 TRANSISTOR smd marking 634 smd diode marking s18
Contextual Info: INTEGRATED CIRCUITS GTL2000 22-bit bi-directional low voltage translator Product data Supersedes data of 2000 Jan 25 Philips Semiconductors 2003 Apr 01 Philips Semiconductors Product data 22-bit bi-directional low voltage translator GTL2000 FEATURES DESCRIPTION

Contextual Info: Si4911DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.019 @ VGS = -4.5 V -8.4 APPLICATIONS 0.023 @ VGS = -2.5 V - 7.6

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 _ i_ RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AF 50 REVISIONS LTR D D DATE OWN APVD 24MAR03 JR PD DESCRIPTION REV PER 0 G 3 A -0 1 8 5 - 0 3 1 CONTINUOUS STRIP ON REELS

SN 1004

Contextual Info: 25.40±0.13 [1.000±.005] 31.24 [1.230] 8 1 8 1 1 8 1 8 3.50±0.30 [.138±.012] 28.50 [1.122] MAX 25.50 [1.004] MAX 13.97 [.550] 10.89 [.429] RECOMMENDED PANEL CUTOUT EMPFOHLENER FRONTPLATTEN AUSSCHNITT TOP OF PCB LP NOTE 1: PANEL GROUND FLANGES TOP, BOTTOM, SIDES GF9

SF0070CF51848T

Contextual Info: 70 MHz Filter 20 MHz Bandwidth Part Number SF0070CF51848T Micro Networks., 324 Clark Street, Worcester, MA 01606, USA tel: 508-852-5400, fax:508-852-8456, www.micronetworks.com TYPICAL PERFORMANCE Horizontal: 5.0 MHz/div Vertical from top : Magnitude Magnitude

honeywell dcs manual

Abstract: 91929 T-15 CO-95967 micro switch momentary 4 pin LED Print Head
Contextual Info: CATALOG L I S T I NG THIS DRAWING HONEYWELL. SWITCH - ENCLOSED a H o n e y we I I D i v i s i o n FED. MFG. CODE COVERS THIS A PROPRIETARY DRAWING IS NOT TO ITEM BE AND COPIED IS THE OR PROPERTY USED WITHOUT OF MICRO THE SWITCH. APPROVAL A OF D I V IS IO N

Contextual Info: RECOMMENDED PANEL CUTOUT EMPFOHLENER FRONTPLATTEN AUSSCHNITT 21.59 [.850] MAX 8 13.63 [.537] 1 PCB EDGE LP 3.20±0.20 [.126±.008] 15.88 [.625] 14.72 [.580] 0.38±0.10 [.015±.004] 16.66 [.656] 10.89 [.429] 11.43±0.13 [.450±.005] ELECTRICAL SCHEMATIC - M4C01

V-10mA

Abstract: 5962-9204201MEA DG408 DG408AK DG408DJ DG408DQ DG408DY DG409
Contextual Info: DG408/409 Vishay Siliconix 8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D Low On-Resistance—rDS on : 100 W Low Charge Injection—Q: 20 pC Fast Transition Time—tTRANS: 160 ns

DG408

Abstract: DG408AK DG408DJ DG408DQ DG408DY DG409
Contextual Info: DG408/409 Vishay Siliconix 8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D Low On-Resistance—rDS on : 100 W Low Charge Injection—Q: 20 pC Fast Transition Time—tTRANS: 160 ns

DG2011

Abstract: DG2011DX HP4192A SC-89
Contextual Info: DG2011 New Product Vishay Siliconix Low-Voltage, Low rON, Single SPDT Analog Switch In SC-89 Package FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D Low Voltage Operation 1.8 V to 5.5 V Low On-Resistance - rON: 1.8 W @ 2.7 V Low Charge Injection

Si4911DY

Contextual Info: Si4911DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.019 @ VGS = -4.5 V -8.4 APPLICATIONS 0.023 @ VGS = -2.5 V - 7.6

Si4770CY

Contextual Info: Si4770CY New Product Vishay Siliconix N-Channel Synchronous MOSFETs With Break-Before-Make FEATURES APPLICATIONS D D D D D D D D D D D Power Supplies - Computer Auxillary - Tablet, Desktop, Server - Point-Of-Load - Multiphase 4.5- to 20-V Operation Under-Voltage Lockout

SUM27N20-78

Contextual Info: SUM27N20-78 New Product Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) 200 TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized for Fast Switching rDS(on) (W)