275X2 Search Results
275X2 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 275X2-102N06A-00 | IXYS-RF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET 2 N-CHANNEL DE275 | Original | 146.61KB | |||
| 275X2-501N16A-00 | IXYS-RF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET 2 N-CHANNEL DE275 | Original | 172.07KB |
275X2 Price and Stock
OMRON Industrial Automation MCJ47141275X2 |
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MCJ47141275X2 |
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American Beauty Tools 9275X-250250 WATT HEATING ELEMENT FOR MODEL 3158X |
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9275X-250 | Bulk | 1 | 1 |
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SMC Corporation of America MXQ32-75-X2600SLIDE TABLE, AIR, MXQ SERIES |
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MXQ32-75-X2600 | Bulk | 5 Weeks | 1 |
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SMC Corporation of America NCY3B15-1275-X206CYLINDER, RODLESS, MAGNETICALLY COUPLED, NCY3 SERIES |
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NCY3B15-1275-X206 | Bulk | 5 Weeks | 1 |
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SMC Corporation of America NCY3B25-1275-X206CYLINDER, RODLESS, MAGNETICALLY COUPLED, NCY3 SERIES |
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NCY3B25-1275-X206 | Bulk | 5 Weeks | 1 |
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275X2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Profile 8254 275x21 mm Weight (Kg/mt) Width (mm) Height (mm) RTH (C/W)* *Lenght (mm) 8,7 275 21 0,65 200 PADA ENGINEERING S.r.l. Via G. B. Pirelli, 11 - Saltara (PU) 61030 - Italy Tel. +39 0721 899555 - Fax. +39 0721 897064 - www.padaengineering.com |
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275x21 | |
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Contextual Info: 275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The 275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz. |
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de275x2-501n16a | |
DE275X2-501N16A
Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2
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de275x2-501n16arf mosfetsrf power mosfet275x2-501n16a+1 | |
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Contextual Info: RF POWER MOSFET Products Product Line of mom D ire cte d Etiergy, inc. An QIXYS Company DE Series The patented DE-SERIES Fast Power MOSFETs are a new class of unique high power transistors designed as a circuit element from the ground up for high speed, high frequency, high power applications at frequencies up to 100 MHz. DEI's Fast Power™ technology |
OCR Scan |
de102n02a275-102n06a275x2-102n06a375-102n12a+2 | |
servomotor Omron R88M
Abstract: R88D-KN04H-ECT EN61800-5-2 R88A-CPG R88D Omron Manual R88A-CRK omron r88d R88D-KT15H R88D-KT04H R88D-KN
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2356-81-300/fax847-843-7900/fax6835-3011/fax21-5037-2222/fax+11 | |
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Contextual Info: G•SiC Technology UltraBright LEDs CxxxUB29x-S0100 Features • Applications UltraBright® LED Performance – – – – 3.8mW min 460nm Deep Blue 3.4mW min (470nm) Blue 2.5mW min (505nm) Signal Green 1.7mW min (527nm) Green • Sorted to Wavelength and Power Bins |
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cxxxub29x-s0100460nm470nm505nm+1 | |
120LQ045Contextual Info: PD - 91858 SCHOTTKY RECTIFIER 120LQ045 HIGH EFFICIENCY SERIES 120 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 120LQ045 Units IF AV 120 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 800 A VF @ 120Apk, TJ =125°C 1.07 V TJ,TstgOperating and storage -55 to 150 |
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120lq045120apkmil-prf-19500 | |
legrand 037 30
Abstract: legrand 037 87 legrand 037 40 operating instructions legrand 037 40 legrand 037 53 legrand 037 00 operating instructions legrand 036 70 Legrand data sockets LEGRAND 037 legrand 037 02
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1slc001001d0203legrand 037 30legrand 037 87legrand 037 40 operating instructions+7 | |
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Contextual Info: PD - 94396 SCHOTTKY RECTIFIER 120LQ100 HIGH EFFICIENCY SERIES 120 A, 100V Major Ratings and Characteristics Characteristics Description/Features 120LQ100 Units IF AV 120 A VRRM 100 V IFSM @ tp = 8.3ms half-sine 1000 A VF @ 120Apk, TJ =125°C 0.74 V TJ,TstgOperating and storage -55 to 150 |
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120lq100120apkmil-prf-19500 | |
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Contextual Info: PD - 91858 SCHOTTKY RECTIFIER 120LQ045 HIGH EFFICIENCY SERIES 120 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 120LQ045 Units IF AV 120 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 800 A VF @ 120Apk, TJ =125°C 1.07 V TJ,TstgOperating and storage -55 to 150 |
Original |
120lq045120apkmil-prf-19500 | |
120LQ100Contextual Info: PD - 94396 SCHOTTKY RECTIFIER 120LQ100 HIGH EFFICIENCY SERIES 120 A, 100V Major Ratings and Characteristics Characteristics Description/Features 120LQ100 Units IF AV 120 A VRRM 100 V IFSM @ tp = 8.3ms half-sine 1000 A VF @ 120Apk, TJ =125°C 0.74 V TJ,TstgOperating and storage -55 to 150 |
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120lq100120apkmil-prf-19500 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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ms-01310-pin5m-1994mo-229+10 | |
DE275X2-102N06A
Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet 50W rf power transistor 100MHz RF POWER MOSFET TRANSISTOR 100MHz 102N06A 400P 10-DOF 275X2-102N06A ssd2
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de275x2-102n06a102n06amosfet pair de275x2-102n06a1000 volt mosfet+6 | |
I8031Contextual Info: Outline drawings Dimensions in mm and inches 1 mm = 0.0394" TO-252 AA (D PAK) i 'l 1 TO-251 AA r * r L2 1 - E - - - 12 I— 62 ^ i-±- - t “ 1 J ' • o 1 T0-220 AC -o J - ft* - - i F t * B f i •" * i * A r J l r 13 I 9 i r ? U l]!L h T E1 . _[ |
OCR Scan |
o-251o-252t0-220-ath03e+1 | |
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