275PF Search Results

Contextual Info: I Radial Ceramic Capacitors ^ RADIAL CERAMIC CAPACITORS ivO A Le SPEER ELECTRONICS, IN C . Conformally coated radial MLC's. NPO, X7R, Y5U temperature coefficients available. Epoxy construction. Wide range of voltage offerings. RATINGS Dielectric Capacitance

chebyshev 3dB

Abstract: table for bessel and chebyshev response 200UA 40KHZ voltage controlled filter
Contextual Info: S5E D • ^7^0457 Q000314 3 ■ ON CHIP SYSTEMS CURTIS ELECTROMUSIC SPECIALTIES 110 Highland Awe. Los Gatos» CA USA 408 395-3350 TLX No. 499-2868 C E M 3 3 8 7 LOW NOISE V.C. SIGNAL PROCESSOR Preliminary, January 1987 Description The CEM 3387 is a general purpose audio signal processor intended

LT1624

Abstract: LT1628 lt1775 lt1625 1N914 LT1506 LT1959 LT1959C LT1959CR LT1959I
Contextual Info: LT1959 4.5A, 500kHz Step-Down Switching Regulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1959 is a 500kHz monolithic buck mode switching regulator functionally identical to the LT1506 but optimized for lower output voltage applications. It will operate down

OC24

Abstract: OC48 ONET2591TA ONET2591TAY
Contextual Info: ONET2591TA www.ti.com SLLS669 – SEPTEMBER 2005 2.5-Gbps Transimpedance Amplifier With AGC and RSSI FEATURES APPLICATIONS • • • • • • • • • • • 1.8-GHz Bandwidth 2.6-kΩ Differential Transimpedance Automatic Gain Control AGC 6.6-pA/√Hz Typical Input Referred Noise

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR16100CT









Features • • • • • • • 16 Amp Guard ring for transient protection Low power loss high efficiency

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR16100CT









Features • • • • 16 Amp Metal of siliconrectifier , majonty carrier conducton Guard ring for transient protection

Contextual Info: ONET4291TA www.ti.com SLLS670 – SEPTEMBER 2005 4.25-Gbps Transimpedance Amplifier With AGC and RSSI FEATURES APPLICATIONS • • • • • • • • • • • 2.8-GHz Bandwidth 3.2-kΩ Differential Transimpedance Automatic Gain Control AGC 8.8-pA/√Hz Typical Input Referred Noise

UFT20015

Abstract: UFT20140 UFT20005 UFT20010 UFT20020 UFT20120 UFT20130 UFT20150 UFT20260 UFT20270
Contextual Info: IJltrafast Recover y Modules r200, 201 ¥ Baseplate A=Common Anode V Ut T t i- h 1 I- r ^ . r ^ i i 1 c tH -1 1 i 11 -IAIE Baseplate Common Cathode °N | W ° Baseplate D=Doubler & 2 0 2 Dim . Inches Min. M illim e te rs Max. A -3.630 B 0.700 0.800 c —

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR15100CT









Features • • • • 15 Amp Metal of siliconrectifier , majonty carrier conducton Guard ring for transient protection

marking MCC

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR16100CT









Features • • • • 16 Amp Metal of siliconrectifier , majonty carrier conducton Guard ring for transient protection

lt1028

Abstract: LT317A
Contextual Info: LT1028/LT1128 Ultralow Noise Precision High Speed Op Amps FEATURES • ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 1028 gain of –1 stable /LT1128(gain of +1 stable) achieve a new standard of excellence in noise performance with 0.85nV/√Hz 1kHz noise, 1.0nV/√Hz 10Hz noise. This

Contextual Info: Ultrafast Recovery Modules HU100, 101 & 102 D G Std. Polarity Base is cathode Rev. Polarity Base is anode J H F C E A L Millimeter Minimum Maximum Minimum Maximum Notes A B C D E F G H J K L B K Dim. Inches 1.52 .725 .605 1.182 .745 .152 .525 .156 .495 .120

Contextual Info: ONET4291TA www.ti.com SLLS670 – SEPTEMBER 2005 4.25-Gbps Transimpedance Amplifier With AGC and RSSI FEATURES APPLICATIONS • • • • • • • • • • • 2.8-GHz Bandwidth 3.2-kΩ Differential Transimpedance Automatic Gain Control AGC 8.8-pA/√Hz Typical Input Referred Noise

UFT20120

Abstract: UFT200 UFT20005 UFT20010 UFT20015 UFT20130 UFT20140 UFT20150 UFT20260 UFT20270
Contextual Info: Ultrafast Recovery Modules UFT2QQ, 201 & 202 Dim. Inches ¥ Min. Baseplate A=Common Anode V Baseplate Common Cathode u t“ 1 1 1 — / T \ 1 / É i V r 1 °-N - 1 c i TT E I + H > Baseplate D=Doubler A B C E F G H N Q R U V W Max. -3.630 0.700 0.800

CEM3387

Abstract: 1569pF audio filter vcf
Contextual Info: aimr-wir CURTIS ELECTROMUSIC flfi »e| SSbMlSfl □DDDD4T 7 J 1 J 77 /3 CURTIS ELECTROMUSIC SPECIALTIES 110 Highland Ave. Los Gatos, CA USA 408 395-3350 TLX No. 499-2868 C E M 3 3 8 7 LOW NOISE V.C. SIGNAL PROCESSOR Preliminary, January 1987 Description

CS5012A

Abstract: CS5014 CS5016 cs5016-jp32 BT 815 transistor atl64
Contextual Info: CS5016/14/12A 16, 14, & 12-Bit, Self-Calibrating A/D Converters Description Features - The CS5012A/14/16 are 12,14 and 16-bit monolithic an­ alog to digital converters with conversion times of 7.2 |js, 14.25 |js and 16.25 |j s . Unique self-calibration circuitry

CAP 103pF

Abstract: 1r5pf
Contextual Info: KOA SPEER ELECTRONICS, INC. TN-196 R9 AHA 10/22/04 Ceramic Chip Capacitors Type NPO, X5R, X7R, Y5V, Z5U CERTIFIED 1. General 1-1 Range of Application This document applies to miniaturized ceramic chip capacitors for applications in circuits of electronic devices.

5-65pF

Contextual Info: NPO, X5R, X7R, Y5V, Z5U ceramic chip capacitors features • High Q factor • Low T.C.C. • Available in high capacitance values up to 100 µF dimensions and construction L Case Size W d Ceramic Body ceramic chip capacitors Electrodes Dimensions inches (mm)

TCC 47uF 20 6.3V

Contextual Info: NPO, X5R, X7R, Y5V, Z5U ceramic chip capacitors features • High Q factor • Low T.C.C. • Available in high capacitance values up to 100 µF dimensions and construction L Case Size W d Ceramic Body ceramic chip capacitors Electrodes Dimensions inches (mm)

390pf npo 1206

Abstract: 274PF 472p 8r2pf 1r5pf
Contextual Info: NPO, X5R, X7R, Y5V, Z5U ceramic chip capacitors features • High Q factor • Low T.C.C. • Available in high capacitance values up to 100 µF dimensions and construction L Case Size W capacitors d Ceramic Body Electrodes Dimensions inches (mm) W t (Max.)

1r5pf

Abstract: 1R5P 8R2PF 223PF z5u .05 332pF 5r6pf capacitor 100pF 0805 datasheet 122PF 100PF
Contextual Info: TN-196 R1 Ceramic Chip Capacitors Type NPO, X7R, Y5V, Z5U CERTIFIED 1. General 1-1 Range of Application This document applies to miniaturized ceramic chip capacitors for applications in circuits of electronic devices. 2. Type Designation The type designation shall be the following form:

CS5012A

Abstract: CS5014 CS5016
Contextual Info: CS5016 CS5014 CS5012A Semiconductor Corporation 16, 14 & 12-Bit, Self-Calibrating A/D Converters Features General Description CMOS A/D Converters • Monolithic Microprocessor Compatible The CS5012A/14/16 are 12, 14 and 16-bit monolithic analog to digital converters with conversion times of

CS5012-BD24

Abstract: KL14 diode CS5012A CS5014 CS5016
Contextual Info: CS5016 CS5014 CS5012A Semiconductor Corporation 16, 14 & 12-Bit, Self-Calibrating A/D Converters Features General Description CMOS A/D Converters • Monolithic Microprocessor Compatible The CS5012A/14/16 are 12, 14 and 16-bit monolithic analog to digital converters with conversion times of

13.56MHZ 3KW GENERATOR

Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
Contextual Info: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A