UFT200 Search Results

UFT200

Abstract: UFT20005 UFT20010 UFT20015 UFT20020 UFT20120 UFT20130 UFT20140 UFT20150 UFT20260
Contextual Info: Ultrafast Recovery Modules UFT200, 201 & 202 A Dim. Inches R Min. G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C H V E Baseplate D=Doubler A B C E F G H N Q R U V W Max. -3.630 0.700 0.800 -0.630 0.120 0.130 0.490 0.510 1.375 BSC 0.010

Contextual Info: UFT20040CT Ultra-fast Soft Recovery Diode Module 1 2 Reverse Voltage: 400 Volts Forward Current: 200 Amp 3 Features z z z z z Circuit Monolithic Dual Diode Construction Low Leakage Current Low Forward Voltage 150°C Operating Junction Temperature Pb-Free Package are Available

Contextual Info: Ultrafast Recovery Modules UFT200, 201 & 202 A Dim. Inches R Min. G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C H V E Baseplate D=Doubler A B C E F G H N Q R U V W Max. -3.630 0.700 0.800 -0.630 0.120 0.130 0.490 0.510 1.375 BSC 0.010

UFT200

Abstract: UFT20005 UFT20010 UFT20015 UFT20020 UFT20120 UFT20130 UFT20140 UFT20150 UFT20260
Contextual Info: Ultrafast Recovery Modules UFT200, 201 Sc 202 Dim . In ch es Min. V Baseplate A=Common Anode ¥ Baseplate Common Cathode u — T É 1“ d i 1 7 \ 1 / °-N—j—N-° 1 ! i c TT Notes: E -K l- Baseplate D=Doubler M illim e te rs Max. A -3.630 B 0.700 0.800

ST 3909

Abstract: DO-4 ST 7735 24155 1NS814
Contextual Info: Microsemi Ultra Fast Rectifiers U FR Part Number JAN1N5812R JANTX1N5812 JANTX1N5812 JANTX1N5812R JANTX1N5812R JANTXV1N5812 JANTXV1N5812 JANTXV1N5812R JANTXV1N5812R UFT2005 UFT2005A 1N5813 1N5813 1N5813R 1N5813R 1NS814 1N5814 1N5814 1N5814R 1N5814R 1N6703 1N670R

Contextual Info: Microsemi Ultra Fast Rectifiers Part Number UFT15270 UFT15280 UFT20005 UFT20010 UFT20015 UFT20020 ! UFT20120 UFT20130 UFT20140 UFT20150 UFT20250 U FT20260 UFT20270 UFT20280 M erosemi Division Colorado Colorado Colorado Colorado Colorado Colorado Colorado Colorado

ft20120

Contextual Info: Ultrafast Recovery Modules UFT200, 201 & 202 ¥ A R G ß q Dim. Inches Min. Baseplate A=Common Anode c V E F V G Baseplate Common Cathode o N H i e t z A -B 0.700 | H o Baseplate D=Doubler dm : I H N Q R U V W M illim eters Max. Max. Min. 3.630 0.800

Contextual Info: UFT20060CT Ultra-fast Soft Recovery Diode Module 1 2 Reverse Voltage: 600 Volts Forward Current: 200 Amp 3 Features z z z z z Circuit Monolithic Dual Diode Construction Low Leakage Current Low Forward Voltage 150°C Operating Junction Temperature Pb-Free Package are Available

UFT2005

Abstract: UFT2010 UFT2015 UFT2020 13z2
Contextual Info: Ultra Fast Recovery Rectifiers UFT2005 - UFT2020 — c 1 Dim. Inches —a w a ± Minimum Maximum Minimum Maximum Notes A 3 C D E F G H J K L M N P T T _L E P il 1 H j r " 1 — i K _ “ =l Millimeter — N .390 .050 .180 .248 .590 .145 .108 .163 .540 .087

UFT-5300-20JP

Abstract: UFT4800-10HP 16JL UFT-2900-40JS UFT380-150JS UFT3005
Contextual Info: CDE CORNELL DUBILIER Axial. 105 C, 4 Term inal. U ltra-L ow Im p ed an ce, Type U F T One Nanohenry Series Inductance For applications requiring ultra-low im pedance above 10kHz and extrem e tem peratures. Type U FT is made with a solid feed-through core and unique

UFT1300-75

Contextual Info: ODE CO R N E L L DU BI L I E R Axial, 105°C, 4 Terminal, Ultra-Low Impedance, Type UFT One Nanohenry Series Inductance For applications requiring ultra-low impedance above 10kHz and extreme temperatures, Type UFT is made with a solid feed-through core and unique

laser range finder schematics

Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
Contextual Info: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals

UFT20015

Abstract: UFT20140 UFT20005 UFT20010 UFT20020 UFT20120 UFT20130 UFT20150 UFT20260 UFT20270
Contextual Info: IJltrafast Recover y Modules r200, 201 ¥ Baseplate A=Common Anode V Ut T t i- h 1 I- r ^ . r ^ i i 1 c tH -1 1 i 11 -IAIE Baseplate Common Cathode °N | W ° Baseplate D=Doubler & 2 0 2 Dim . Inches Min. M illim e te rs Max. A -3.630 B 0.700 0.800 c —

UFT20120

Abstract: UFT200 UFT20005 UFT20010 UFT20015 UFT20130 UFT20140 UFT20150 UFT20260 UFT20270
Contextual Info: Ultrafast Recovery Modules UFT2QQ, 201 & 202 Dim. Inches ¥ Min. Baseplate A=Common Anode V Baseplate Common Cathode u t“ 1 1 1 — / T \ 1 / É i V r 1 °-N - 1 c i TT E I + H > Baseplate D=Doubler A B C E F G H N Q R U V W Max. -3.630 0.700 0.800

FT230

Abstract: ft320 cur19 ft530 FT5000 FT1000 ft340 FT870
Contextual Info: AXIAL LEADED CAPACITORS Rugged 4 Terminal, Ultra-Low Impedance, 105°C Type UFT - 18 AWG Leads, 20 Amps/Type UFTA-16 AWG Leads, 45 Amps These capacitors are designed for rugged switching power supplies and military or other applications requiring ultra low impedance above 10kHz through a

scr 8a 200v

Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
Contextual Info: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

VRF2933FL

Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Contextual Info: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system

SCR 30A 100V

Abstract: do213ab 1A 200V SCR die Fast Recovery Bridge Rectifier, 60A, 600V Ultrafast Recovery Rectifier Bridge ultraFast Recovery Bridge Rectifier rectifier bridge 300v 30a Fast Recovery Bridge Rectifier, 35A, 600V Bridge Rectifier, 35A, 600V single phase half bridge controlled rectifier scr
Contextual Info: Microsemi Corporation Colorado Product Selection Guide Spring 2004 Product Selection Guide Index Page Military Qualified Parts 1 Axial Lead Rectifiers 2 Surface Mount Rectifiers 3-5 TO220 and TO247 Rectifiers 6 Power Surface Mounts 7 Discrete Modules 8 Power Modules

do213ab

Abstract: do215 MS10411 SCR 30A 100V microsemi cross index X3420 Bridge Rectifier, 35A, 600V DO215AA 1N5823 scr 1a 1200V
Contextual Info: POWER CONDITIONING PRODUCT SELECTION GUIDE Product Selection Guide Index Page Military Qualified Parts 1 Axial Lead Rectifiers 2 Surface Mount Rectifiers 3-5 TO220 and TO247 Rectifiers 6 Power Surface Mounts 7 Discrete Modules 8 Power Modules 9-10 Hermetic Power Packages

UFT20005

Abstract: UFT20010 UFT20015 UFT20130 UFT20140 UFT20150 UFT20250 UFT20260 UFT20270
Contextual Info: Ultrafast Recovery Modules UFT 200. 201 &c 202 v I— • — ! Dim. Inches Min. Baseplate A»Common Anode ß | |fr n ri tH -7 U — 1 / w A B C E F G H N Q R U V W r v J 1 r \ ! - N I- " 1 V Baseplate Common Cathode u 1- i ! i c o-W—j-W -o Notes: Baseplate

UR6200-7R5JL

Contextual Info: C D E CORNELL DUBILIER Axial, 105°C, 4 Terminal, Ultra-Low Impedance, Type UFT One Nanohenry Series Inductance For applications requiring ultra-low impedance above 10kHz and extreme temperatures, Type UFT is made with a solid feed-through core and unique