2716 JL Search Results

MN2716

Contextual Info: ^EU, MN2716 W I 1>J1 2 3 L S I MN2716 16384 ti'y 16384-Bit Electrically Programmable, UV Erasable ROM H St ^ /D e sc rip tio n M N 2716Ü , V — K X8 t* -, t- <n 'I "Tfgi.-16384 t' / h 2048 — K * > ') / i U (E P R O M ) X " t 0 + 5 V # — H L 'M X ’ t iïî'E L ,

la7630

Abstract: 2SA606 2716 JL LA7830 4vm9 So2716-6 X 27163 A STK78501 LA7650 NV20
Contextual Info: r _ IN O . = ^ m w - = L - x 3178 « « ¿K a a n n » S T K 7 8 5 0 1 - * A * S 'V i t a t e s i ! a k / / - * ¥ 2716 * f i W Ä * | I V l s ] i 'X S •CRT r > a * fi£ .3¡f* — Í* 'f «Ä > T > f 4 - r < O W m & J tL * lÌ E » T * 4 . / / 'S y 7 * , X > Y / f ? J ' - i ' f l h & O / c a M t i t

information applikation

Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
Contextual Info: m o G ^ ^ e le l^ t e n o r iîl-i Information Applikation i m f l k F a i ° o l B l H t 3 n a r Information Applikation HEFT =41 MOS-Speicher 3 - E PROM v o b h a lb le it o r w r f c f r a n k f u r c / o d a r im v b ko m b in at m jkro a W tt r onMi KAMMER DER TECHNIK

Halbleiterbauelemente DDR

Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Contextual Info: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)

Contextual Info: NMC27C128BN 3 National Sem iconductor PRELIMINARY NMC27C128BN High Speed Version 131,072-Bit 16k x 8 One Time Programmable CM O S PROM G eneral D e scrip tio n Features The NMC27C128BN is a high-speed 128k one time pro­ grammable CMOS PROM, ideally suited for applications

P2764A-2

Contextual Info: 2764A ADVANCED 64K 8 K x 8 PRODUCTION AND UV ERASABLE PROMs New Quick-Pulse Programming Algorithm For Plastic P2764A — 1 Second Programming — inteligent Programming™ Algorithm Compatible Plastic P2764A is Compatible with Auto-insertion Equipment

NMC27C256

Contextual Info: NMC27C256BN PRELIMINARY National Sem iconductor NMC27C256BN High Speed Version 262,144-Bit 32k x 8 One-Time Programmable CM O S PROM General Description Features The NMC27C256BN is a high-speed 256k one-time pro­ grammable CMOS PROM, ideally suited for applications

2764 memory

Abstract: 2732A-2 2732A-20 27C128 27C256 27C512 27C64 87C64 LD2732A TD2732A
Contextual Info: 2732A 32K 4K x 8 UV ERASABLE PROMS 200 ns (2732A-2) Maximum Access Time . . . HMOS*-E Technology Low Current Requirement - 1 0 0 mA Active - 35 mA Standby inteligent I d e n t i f i e r T M Mode -A utom atic Programming Operation Compatible with High-Speed

Contextual Info: 27C256 256K 32K x 8 CHMOS PRODUCTION AND UV ERASABLE PROMS Automotive • Noise Immunity Features — ± 10% Vcc Tolerance — Maximum Latch-up Immunity Through EPI Processing ■ New Quick-Pulse P ro g ra m m in g tm Algorithm — 4 Second Programming ■ Available in 28-Pin Cerdlp Package

27128A-1

Abstract: 27128A-2 27C256 27C512 27C64 87C64 A12C LD27128A TD27128A 27128A
Contextual Info: intei 27128A 128K 16K x 8 PRODUCTION AND UV ERASABLE PROMs Fast 150 nsec A cce ss Time — H M O S* ll-E Technology inteligent Identifier Mode — Automated Programming Operations Low Power — 100 mA Maximum Active — 40 mA Maximum Standby Available in 28-Pin Cerdip Package

intel 27c512 eprom

Abstract: 27C512-200V10 i27C512 d27c512 27C512-120V10 I27C256 intel 27c512 29022 27C512-1 27C512-2
Contextual Info: INTEL CORP MEMORY/LOGIC 50E D • 4fl2hl7b GObböOH *4 ■ In te l' T -V L -lS -tS 27C512 *T“-V6-/3 -29 512K (64K x 8) CHMOS PRODUCTION AND UV ERASABLE PROMS ■ Software Carrier Capability ■ 120 ns Access Time ■ Two-Line Control ■ Inteligent identifier Mode

itek

Abstract: MN4416 100PF
Contextual Info: PANASONIC 6932852 M N INDL/ELEK PANASONIC -CIO 7 E DÜJ I NOL»ELECTRONIC OQOt. 3 3 1 ^ 3 2 0 5 5 72C 0 6 3 3 1 D •-: - ^ MN4416 T - % 4416 1 -23-11 16,384 t 'y h C M O S X ^ - r >y^RAM 16,384-Bit CMOS Static RAM s f f i- i- S iiS E l/ P in MN4416 l±, 7 T

Contextual Info: £ÿj SGS-THOMSON EF6804P2 8 BIT MICROCOMPUTER May 1989 - ’ ’" " W CB132 P Plastic Package CB520 FN (PLCC28) PIN CO NNECTIONS v ss C 1 • '- ^ 28 RËSfcï IRQ Ç ? 11 PA/ 3 26 PA6 C4 25 PAS vcc EXTAl i; 5 24 PA4 MDS t 6 23 PA3 X TAL I 7 22 »A7 PCO ( B

hm-6616

Abstract: Hm6616 HS6616RH harris 6616
Contextual Info: h HS-6616RH a r r is A DV A N C E IN FO RM ATIO N Radiation Hardened 2K x 8 CMOS PROM Pinout Features TOP VIEW • Radiation Hardened ► Parametrics G u ara n te ed . 1 x 10s Rad Si ► Latch-U p F r e e . > 1 x 1012 R ad(Si)/s

max6239

Contextual Info: FSTJ9055D, FSTJ9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Harris has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

d3325

Abstract: SN75188 SN75189 SN75C185
Contextual Info: SN65C185, SN75C185 LOW-POWER MULTIPLE DRIVERSAND RECEIVERS SLLS065B, D3325, AUGUST 1 9 8 9 - REVISED MARCH 1993 Meets Standard EIA-232-D Revision of RS-232-C Single Chip With Easy Interface Between UART and Serial Port Connector Less Than 9-mW Power Consumption

intel 2732

Abstract: eprom 2732A 2732A INTEL IC 2732 intel 2732 eprom 2732A-2 ic 2764 rom 2732 eprom pin diagram of ic 2732 2732A
Contextual Info: intei 2732 32K 4K x 8 UV ERASABLE PROM Output Enable for MCS-85 and MCS86™ Compatibility Fast Access Time: — 390 ns Max. 2732-4 — 450 ns Max. 2732 — 550 ns Max. 2732-6 Industry Standard Pinout — JEDEC Approved Low Power Dissipation: — 150mA Max. Active Current

mikroelektronik ddr

Abstract: Halbleiterbauelemente DDR VEB mikroelektronik Datenblattsammlung tda 8841 s1 mikroelektronik datenblattsammlung ub8830d ub 8820 einchipmikrorechner ub 8840
Contextual Info: D ^ lklñ^ oloi-Cfew + » J l I e le k tr o n ik - b a u e » a m e n ti : -'i ÈÊêîêèêêSSIê I ê ê S i l S lä lg ÊM ÊÈÊÈM as“"s^^ NurfiirdenDienstûêlriBé rii: lèmm ^ ! f DATENBLATTSAMMUUNn elektronische baueiemente — ^SSii! • a ¡S

Contextual Info: FSJ9055D, FSJ9055R tfV W S Ju ly 1999 p O S S '^ fj|0 5 5 O Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

UB8830D

Abstract: u125d UB8820M ub 8820 u880 UL7211D ub 8840 MC 4011 BCP U806D UB8840M
Contextual Info: in n flkän X □ n i Typenübersicht TkinOBOM 0D30p Fertigungsprogram m n pOH3BOACTBeHHaa nporpaMMa Das vorliegende H eft soll dem Zweck dienen, U e/ibto npeflCTaB/ieHHOM npocneKTa-TeipaAn AB/iaeTcs» einen Überblick über das Erzeugnissortim enten H a lb ­

CA3098E

Abstract: CA3098
Contextual Info: CA3098 January 1999 Programmable schmitt Trigger with Memory, Dual Input Precision Level Detector File Number 896.5 Features • P ro g ra m m a b le O p e ra tin g C u rren t • M icrop ow er S ta n d b y Dissipation T h e C A 3 0 9 8 P ro g ra m m a b le Schm itt Trigger is a m onolithic

Contextual Info: HUF76432P3, HUF76432S3S S em iconductor Data Sheet June 1999 File Number 4673.1 56A, 60 V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO -220AB JEDEC TO-263AB SOURCE • Ultra Low On-Resistance ‘ rDS ON = 0.018£i, v g s = 1°v

Contextual Info: FSJ163D, FSJ163R f f X R R /S D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s specifically d esig n ed for c o m m ercial and m ilitary spa c e

Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Semiconductor J an u ary 1999 D ata S h eet 21 A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high