2716 2K EPROM RETENTION Search Results

2816 eeprom

Abstract: eeprom 2816 2716 eprom RAM 2816 DS1220Y dallas 2716 eeprom 2716 2k eprom retention 2816 eprom sram 2k x 8 eeprom 2716
Contextual Info: DS1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of externa! power 1 24 Aö 2 23 A5 3 22 A4 4 21 A3 5 20 A2 6 19 A1 7 18 A0 8 17 • Read and write access times as fast as 100 ns

2816 eeprom

Abstract: IC 2816 eeprom 2816 2716 2k eprom 24 pin 2816 eprom 2716 eprom eeprom 2716 eprom 2816 2816 ic
Contextual Info: DS 1220AB/AD DALLAS DS1220AB/AD ^ s e m ic o n d u c to r FEATURES Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

GR281

Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
Contextual Info: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.

gr281

Abstract: static ram 4802 pd446 4016 RAM
Contextual Info: GREENWICH INSTRUMENTS USA • Plug-in replacement for Static RAM • 10 years data retention • No erasure required • Fast power down • Functions as Data or Program RAM • No limit to number of programming cycles • Standard 24-pin JEDEC pinout GR281 is 2 kilobyte of non-volatile memory which is pin-compatible

ram 8416

Contextual Info: FAST A C C E S S - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout

pin diagram of ic 2716

Abstract: intel 2716 eprom
Contextual Info: ER5716 ER5716IR ER5716HR G IN IR A I INS1 K liM l M PRELIMINARY INFORMATION 16K N-Channel Electrically Erasable and Programmable ROM FEATURES ELEC. ALTERABLE NON-VOLATILE MEMORY • ■ ■ ■ ■ ■ ■ ■ ■ • ■ PIN C O N FIG UR A TIO N 2048 w ord x 8 bit organization, fu lly decoded

EEPROM 2816 CMOS

Abstract: CI EEPROM 2816 DS1220Y-100 DS1220Y-120 DS1220Y-200 eeprom 2816 DS1220Y DS1220Y-100IND DS1220Y-150 DS1220Y-200IND
Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles

gr281

Abstract: GR281, 2K x 8
Contextual Info: 2 K x 8 GR 281 NON VOLATILE RAM WSTRUMENTS ITO * Plug-in replacement for Static R A M * 10 years data retention * No erasure required * Fast power down * Functions as Data or Program R A M * No lim it to number of programming cycles * Standard 24-pin JEDEC pinout

2816 eeprom

Abstract: EEPROM 2816 CMOS DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 CI EEPROM 2816
Contextual Info: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

2816 eeprom

Abstract: CI EEPROM 2816 DS1220Y-120 DS1220Y DS1220Y-100 DS1220Y-150 DS1220Y-200 2716 eprom
Contextual Info: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

2816 eeprom

Abstract: CI EEPROM 2816 eeprom 2816 CI EPROM 2816 2816 eprom EEPROM 2816 DATASHEET 2716 eprom datasheet DS1220Y DS1220Y-100 DS1220Y-120
Contextual Info: DS1220Y 16k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles

Contextual Info: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

Contextual Info: DS1220Y D ALLAS DS1220Y 16K Nonvolatile SR A M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc 1 24 § Vcc A6 1 2 23 1 AB A7 i • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

Contextual Info: DS1220Y DALLAS DS1220Y 16K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc A7 1 A6 | A5 | s A4 1 24 1 VCC • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

CI EEPROM 2816

Abstract: eeprom 2816 DS1220Y-200IND 2716 IC DATA SHEET 2816 eeprom how to read Maxim date code DS1220Y DS1220Y-100 DS1220Y-100IND DS1220Y-120
Contextual Info: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

1220Y

Abstract: DS1220
Contextual Info: DS1220Y DALLAS SEM ICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Datais automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

Contextual Info: DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SR AM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 | 1 • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

DS1220

Abstract: DS1220AB DS1220AD-120 ICC01 DS1220AB-100 DS1220AB-120 DS1220AD DS1220AD-100
Contextual Info: DS1220AB/AD 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

2716 eeprom

Abstract: eeprom 2816 DS1220Y DS1220Y-100 DS1220Y-100IND
Contextual Info: 19-5579; Rev 10/10 NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power

2716 eeprom

Abstract: DS1220 DS1220AB DS1220AB-100 DS1220AB-120 DS1220AD DS1220AD-100 DS1220AD-120 ICC01
Contextual Info: DS1220AB/AD 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

Contextual Info: DS1220Y DALLAS SEMICONDUCTOR D S1220Y 16K Nonvolatile SRA M FEATURES PIN ASSIGNMENT • Data retention in the absence of V q c A7 § 1 24 1 Vcc 23 1 AB AS I s 22 1 Ad A4 § 4 21 1 WE A3 1 5 20 1 ÖI • Data is automatically protected during power loss A6 I

EEPROM 2816 CMOS

Abstract: DS1220 DS1220AB DS1220AB-100 DS1220AB-120 DS1220AD ICC01
Contextual Info: DS1220AB/AD 16k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles

dallas date code DS1220AD

Contextual Info: 19-5580; Rev 10/10 DS1220AB/AD 16k Nonvolatile SRAM www.maxim-ic.com PIN ASSIGNMENT FEATURES • •          10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

CI EEPROM 2816

Abstract: eeprom 2816 2816 eprom EEPROM 2816 CMOS 2816 eeprom DS1220Y-200 DALLAS DS1220 DS1220Y DS1220Y-100 DS1220Y-120
Contextual Info: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power