270J1 Search Results

DIODE C06-15

Abstract: str 3105 DIODE C06-15 65 diode EGP PIN DIAGRAM OF 7 segment display LT 542 DIODE C06-15 46 LINEAR encoder TX4 C06-15 diode PIN DIAGRAM OF 7 segment display LT 542 in DIODE C06-15 75
Contextual Info: DP83955/DP83956 blE 0 3 D b5D115M 00fl07fl2 G5M « N S C S PRELIMINARY N a tio n a l ÆÆ Semiconductor NATL SEHICOND L I N E A R DP83955/DP83956 LERIC LitE Repeater Interface Controller General Description The DP83955/56 LitE Repeater Interface Controller

153j100

Abstract: MSM8225-0-576NSP1.0G 182J5 153M1 e122x RPE110COG ah 471k capacitor 682J100 102J100 murata 113x
Contextual Info: MONOLITHIC CERAMIC CAPACITORS CONFORMAL COATED RADIAL LEADS OUTSTANDING CHARACTERISTICS • ■ ■ ■ ■ m o m » ■ Wide capacitance, T.C., voltage and tolerance range ■ Industry standard sizes ■ Tape and Reel available for auto-insertion ■ Various lead spacing available

Contextual Info: 5 3 04606 L S I C_ O M P U T E R SYSTEMS L S I COMPUTER SYSTEMS H5 LSI/CSI 92D 0 0 5 1 5 DEjS3Q4L0L DT*“<£>5- DDDDS1S IS S I L5 7331 LS 7332 " TOUCH SENSITIVE LIGHT DIMMER AND A.C. MOTOR SPEED CONTROLLER WITH COMPUTER CONTROL AND MONITORING FEATURES:

Elantec High Performance Analog Integrated Circuits 1994 Elantec Inc

Abstract: EL444
Contextual Info: HIGH PERFORMANCE ANAUDG INTEGRATED CIRCUITS Features • U n ity or + 2-gain bandw idth of 80 M H z • 70 dB off-channel isolation at 4 MHz • D irectly drives high-im pedance or 75fl loads • .02% and .02° differential gain and phase errors • 8 ns sw itching tim e

223K100V

Abstract: 334K100V 333K100V AZ 393M 682K100V RPE117 103J100V RPE122X7R RPE114
Contextual Info: MONOLITHIC CERAMIC CAPACITORS CONFORMAL COATED RADIAL LEADS O UTSTAND IN G C H A R A C TE R ISTIC S ^ I • r | ■ ■ ■ ■ ■ ■ In ■ «p # i* = W id e capacitance, T.C., voltage and tolerance range Industry standard sizes Tape and reel available for auto-insertion

ILS 404 CB

Abstract: 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706
Contextual Info: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.

MOS248

Abstract: M0S248 MOS548 ILP MOS248 400 watt amplifier, 100Khz 120w audio power amplifier circuit 120W AUDIO AMPLIFIER module
Contextual Info: DATA SHEET ELECTRONICS LTD. Ref: M0SQ296 MOS548 POWER AMPLIFIER The M0S248 Power Amplifier offers the superior performance characteristics of MOS technology in a module which is ideal for constructing very high quality audio amplifiers. Encapsulation to an integral heatsink together

Contextual Info: TEMPERATURE COMPENSATING CERAMIC DISC CAPACITORS m u H n tn CLASS I PA R T N U M B ERING SYSTEM _ ! DD110 CAPACITOR TYPE AND _ 950 LEAD CONFIG. See lead style chart N150 TEMPERATURE CHARACTERISTICS AND T.C. TOLERANCES Per standard EIA

mwab

Abstract: 2N706 transistor 2n706 2n706 transistor mwab 3.3
Contextual Info: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.